Diodes Incorporated ZTX792ASTZ

Overview

ZTX792ASTZ from Diodes Incorporated is a PNP silicon planar medium-power high-gain bipolar junction transistor (BJT) designed for switching and linear amplification in battery-powered and motor drive circuits. It delivers V_CEO = −70 V, h_FE = 800 (min 300) at I_C = −10 mA, V_CE(sat) = −0.45 V at I_C = −500 mA/I_B = −5 mA, and f_T = 100 MHz - enabling efficient Darlington pair replacement in flash gun converters and low-voltage motor drivers.

For engineers reviewing the ZTX792ASTZ datasheet, ZTX792ASTZ pinout, ZTX792ASTZ application, or ZTX792ASTZ equivalent, key selection criteria include verified PNP polarity, TO-92-compatible E-Line package thermal performance (R_th(j-amb) = 175 °C/W on 1-in² PCB), saturation voltage under pulsed load conditions, and gain linearity across I_C = −10 mA to −2 A.

Technical Context

This BJT operates as a medium-power PNP switch with robust avalanche-rated breakdown margins: V_(BR)CBO = −75 V, V_(BR)CEO = −70 V, and V_(BR)EBO = −5 V. Its high DC current gain (h_FE ≥ 300 at I_C = −10 mA) and low V_CE(sat) support stable operation in saturated-switching topologies.

Designed for discrete amplifier and driver stages, it features f_T = 100 MHz at I_C = −50 mA/V_CE = −5 V and exhibits C_ibo = 225 pF / C_obo = 22 pF - confirming suitability for moderate-frequency switching up to ~10 MHz with controlled Miller effect.

Key Specifications

Pinout & Package

Package: TO-92-compatible E-Line (3-lead plastic case, lead form per ZTX792A drawing 3-282). Mounting requires minimum 1-inch² copper area for rated power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Compared with ZTX753 and MJD2955T4G, ZTX792ASTZ uniquely balances high gain (up to 800), low V_CE(sat), and TO-92 compatibility - making it optimal for compact, battery-efficient switching where base drive efficiency and PCB real estate are critical.

Availability

ZTX792ASTZ is available at Aetrix Electronics and suitable for flash gun converters, battery-powered motor drivers, Darlington pre-driver stages, and industrial sensor signal conditioning requiring stable component supply and long-term manufacturability.

Supply support for ZTX792ASTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, automotive, and consumer applications.

ZTX792ASTZ belongs to the ZTX series of high-gain PNP transistors engineered for medium-power switching and amplification in portable and ruggedized equipment where thermal efficiency and gain consistency are essential.

FAQ

What is the maximum continuous collector current for ZTX792ASTZ?

The maximum continuous collector current is −2 A at T_amb = 25°C with adequate PCB copper heatsinking (1-inch² minimum). At elevated ambient temperatures, derating applies: P_tot decreases by 5.7 mW/°C above 25°C, limiting sustainable I_C in thermally constrained environments.

Can ZTX792ASTZ replace ZTX753 in existing designs?

Yes, ZTX792ASTZ is mechanically and electrically compatible with ZTX753 in TO-92 sockets, offering higher V_CEO (−70 V vs. −60 V) and greater h_FE (up to 800 vs. 300). No layout change is needed, but verify base resistor values due to higher gain and lower V_CE(sat).

What is the safe operating area (SOA) limitation at DC operation?

At DC, the SOA is bounded by P_tot = 1.5 W on PCB and V_CEO = −70 V. For example, at V_CE = −35 V, maximum allowable I_C is ~43 mA to stay within 1.5 W; pulsed operation extends this limit significantly per the transient thermal impedance curve.

Does ZTX792ASTZ require a heatsink for 1 A switching?

No external heatsink is required for 1 A pulsed or intermittent operation with proper PCB copper (1-inch²). However, continuous 1 A operation at >50°C ambient exceeds safe junction temperature without additional copper area or airflow, as R_th(j-amb) = 175 °C/W yields ΔT ≈ 175°C rise at full power.