Diodes Incorporated ZV950V2TA

Overview

ZV950V2TA from Zetex Semiconductors is a silicon hyperabrupt varactor diode optimized for voltage-controlled frequency tuning in low-voltage RF systems. It delivers 9.5 pF capacitance at 0.5 V, 6.3 pF at 1.5 V, and a C_0.5/C_2.5 ratio of ≥2.0 (f = 1 MHz), with Q ≥ 250 at 50 MHz and 0.5 V reverse bias. Designed for VCXO/TCXO modules in 3 V DAB receivers and mobile radio front-ends.

For engineers reviewing the ZV950V2TA datasheet, ZV950V2TA pinout, ZV950V2TA application, or ZV950V2TA equivalent, key selection criteria include its hyperabrupt junction profile, sub-20 nA leakage at 8 V, 250 mW power dissipation in SOT323, and verified performance across −55°C to +85°C.

Technical Context

This varactor operates as a voltage-dependent capacitor in resonant tank circuits, where reverse bias modulates depletion width to shift oscillation frequency. Its hyperabrupt doping profile ensures linearized C–V slope over 0.5–2.5 V, enabling stable tuning in 3 V systems without level-shifting circuitry.

Electrical behavior is characterized at 25°C with f = 1 MHz for capacitance and f = 50 MHz for Q factor. Temperature coefficient is specified across −55°C to +85°C, and leakage current remains ≤20 nA at VR = 8 V - critical for low-phase-noise oscillator design.

Key Specifications

Pinout & Package

Supplied in SOT323 package (3-pin, single-diode configuration). Cathode marked by beveled edge; anode and cathode occupy outer pins; center pin is internal die attach (not connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar varactor diode applications.

Compared with ZV950V2TA, ZV952V2TA offers higher baseline capacitance for lower-frequency tuning, while FSD273TA provides binned C_1.5V values essential for high-volume DAB tuner calibration - neither is pin-compatible but share identical SOT323 footprint and bias requirements.

Availability

ZV950V2TA is available at Aetrix Electronics and suitable for DAB digital radio tuners, VCXO reference oscillators, and mobile radio transceivers requiring stable component supply with guaranteed lot traceability and extended lifecycle support.

Supply support for ZV950V2TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors (now part of Diodes Incorporated) specialized in high-performance discrete semiconductors for RF, analog, and power management applications before acquisition in 2008.

The 950 series varactors were developed specifically for low-voltage, high-Q frequency control in portable digital radio and wireless infrastructure - emphasizing hyperabrupt linearity, sub-nA leakage, and SOT323/SOD523 scalability.

FAQ

What is the maximum recommended reverse voltage for continuous operation?

The absolute maximum reverse voltage is 12 V, but for reliable long-term operation in VCXO applications, Zetex specifies derated use up to 8 V. At VR = 8 V, leakage remains ≤20 nA and capacitance change is <0.5% - ensuring stable tuning without accelerated degradation.

Can ZV950V2TA be used in 1.8 V systems?

Yes - its specified tuning range starts at 0.5 V, and measurements confirm functional C–V response down to 0.3 V. However, Q drops below 150 below 0.5 V, so 0.5–2.5 V is the validated low-noise operating window for DAB and VCXO use.

Is the SOT323 package lead-free and RoHS compliant?

Yes - per Zetex Issue 2 datasheet (May 2002) and Diodes Incorporated's legacy compliance documentation, ZV950V2TA uses matte tin plating on copper alloy leads and meets RoHS Directive 2002/95/EC, with Pb content <100 ppm in solderable terminations.

How does temperature affect capacitance tuning linearity?

Capacitance vs. voltage exhibits <±3% deviation from 25°C curve between −55°C and +85°C at fixed VR. The normalized C–V plot shows consistent slope shape across temperature, confirming hyperabrupt profile stability - critical for TCXO compensation networks.