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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated ZX3CD1S1M832TA

Name: ZX3CD1S1M832TA
Brand: Diodes Incorporated
SKU: ZX3CD1S1M832TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZX3CD1S1M832TA

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: ZX3CD1S1M832TA.pdf

Description:: TRANS PNP 12V 4A 3X2MM 8MLP

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Product details

Overview

ZX3CD1S1M832TA from Diodes Incorporated (formerly Zetex) is a dual-die 3mm × 2mm MLP package integrating a PNP low-saturation transistor (V_CEO = −12 V, I_C = −4 A, V_CE(sat) = −140 mV @ 1 A) and a 40 V / 1 A Schottky diode (V_F = 425 mV @ 1 A, t_rr = 12 ns). It serves as a compact power-switching and freewheeling pair in DC-DC converters and battery charging circuits.

For engineers reviewing the ZX3CD1S1M832TA datasheet, ZX3CD1S1M832TA pinout, ZX3CD1S1M832TA application, or ZX3CD1S1M832TA equivalent, key selection criteria include dual-die thermal coupling, ultra-low V_CE(sat)/V_F trade-offs, MLP832 footprint compatibility, and simultaneous conduction capability in synchronous buck topologies.

Technical Context

The device integrates two functionally independent silicon dies-PNP transistor and Schottky diode-within a single MLP832 thermally enhanced leadframe. Both dies share common thermal mass but operate with electrically isolated terminals, enabling coordinated switching while requiring separate base/gate drive and cathode/anode routing.

Thermal performance depends on PCB copper area and weight: R_θJA ranges from 41.7 °C/W (85 cm², 2 oz Cu) to 125 °C/W (8 cm², 2 oz Cu, minimal leads), with derating curves specified for single- and dual-die power dissipation modes (notes f and g).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−12 V: Maximum safe collector-emitter voltage before breakdown in PNP mode; sets upper limit for buck converter input voltage swing.
V_F @ 1 A	425 mV: Forward voltage drop across Schottky diode at rated current; directly determines conduction loss in freewheeling path.
V_CE(sat) @ 1 A	−140 mV: Saturation voltage of PNP transistor at I_C = −1 A, I_B = −10 mA; enables <0.14 W conduction loss per switch cycle.
t_rr	12 ns: Reverse recovery time of Schottky diode; ensures minimal switching loss and EMI during high-frequency (>1 MHz) operation.
Junction Temp (T_j)	150 °C (transistor), 125 °C (diode): Maximum allowable die temperature; defines thermal design margin for continuous 1–2 W power dissipation.
Package	MLP832 (3 mm × 2 mm × 0.9 mm): Exposed-pad micro leadframe package enabling low-inductance mounting and efficient heat transfer to PCB ground plane.

Pinout & Package

Package: MLP832 - 3 mm × 2 mm × 0.9 mm micro leadframe package with exposed thermal pad (pin 1–4 layout); RoHS-compliant, halogen-free, matte tin lead finish.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	PNP emitter terminal	Common reference node for transistor; connects to system ground or low-side return in buck/boost configurations.
2 (Base)	PNP base control input	Low-impedance gate-like input requiring −10 to −100 mA drive for full saturation; not compatible with CMOS logic levels without level-shifting.
3 (Collector)	PNP collector output	Switched high-side output node; connects to input rail in high-side switch or to inductor node in synchronous rectifier.
4 (Cathode)	Schottky diode cathode	Connects to positive rail or inductor node; forms freewheeling path when transistor is off.
5 (Anode)	Schottky diode anode	Connects to ground or low-side return; completes current loop during diode conduction phase.
Exposed Pad	Thermal & electrical ground	Must be soldered to large PCB copper pour for thermal management and low-inductance grounding; electrically tied to emitter (pin 1) internally.

Key Features

Feature	Design Value
Ultra-low V_CE(sat)	−140 mV @ 1 A enables >95% efficiency in 3–5 V input DC-DC stages with minimal thermal rise.
Fast Schottky t_rr	12 ns reverse recovery supports clean zero-voltage switching up to 2 MHz without shoot-through risk.
Dual-die thermal coupling	Shared thermal mass allows coordinated thermal derating in high-duty-cycle applications where both devices conduct simultaneously.
MLP832 footprint	3 mm × 2 mm area saves >60% board space vs. discrete SO-8 or SOT-23-6 solutions while maintaining manufacturability.

Applications

DC-DC Converters

USB Charging Circuits

Use Scenario: Step-down conversion from 5–12 V input to 3.3 V or 1.8 V for PMICs and SoCs in portable electronics.

IC Role / Device Role / Timing Role: PNP acts as synchronous high-side switch; Schottky provides low-loss freewheeling path during off-time.

Use Value: Combined V_CE(sat) + V_F < 570 mV at 1 A reduces total conduction loss by ~35% versus discrete MOSFET+Schottky pairs.

Use Scenario: USB 2.0/3.0 compliant 5 V to 3.3 V LDO replacement in smartphone charging ICs with dynamic load steps.

IC Role / Device Role / Timing Role: PNP handles peak 2 A pulsed loads; Schottky clamps inductive kickback from USB port protection circuitry.

Use Value: 12 ns t_rr prevents voltage overshoot beyond ±6 V during hot-plug events, meeting USB-IF ESD immunity requirements.

Motor Driver Half-Bridge

Power Bank Buck Regulator

Use Scenario: Low-voltage (≤12 V) brushed DC motor control in wearables and IoT actuators with <1 W average power.

IC Role / Device Role / Timing Role: PNP serves as active high-side switch; Schottky provides flyback path during PWM off-cycles.

Use Value: −140 mV V_CE(sat) limits I²R heating to <200 mW at 1 A, enabling fanless operation in sealed enclosures.

Use Scenario: 3.7 V Li-ion to 5 V boost followed by 5 V to 3.3 V buck regulation in multi-cell power banks.

IC Role / Device Role / Timing Role: Schottky conducts continuous 1 A output current; PNP switches auxiliary 5 V rail for display backlight control.

Use Value: Shared MLP832 thermal pad reduces localized hot spots by 15–20 °C vs. side-by-side SOT-23 devices under 1.5 W combined dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP + Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXTPS717MC	Successor part with improved V_CE(sat) (−120 mV @ 1 A) and higher I_C (−5 A); same MLP832 package.	Supports higher peak currents in fast-charging circuits; requires updated layout for tighter thermal margin.	Select for new designs requiring extended lifetime or higher reliability at elevated ambient temperatures.
DMN3020LSD-13	Single-channel 30 V N-channel MOSFET + integrated Schottky in TSOP-6; no PNP functionality.	Limited to low-side switching only; lacks complementary high-side drive capability.	Use only if topology permits low-side FET + diode configuration and board space allows larger 3.05 mm × 1.65 mm footprint.

Compared with ZXTPS717MC, this part offers lower cost and legacy qualification but reduced current headroom and slightly higher conduction loss; versus DMN3020LSD-13, it delivers true complementary switching capability in half the footprint but requires bipolar base drive support.

Availability

ZX3CD1S1M832TA is available at Aetrix Electronics and suitable for DC-DC converters, USB charging circuits, and motor control applications requiring stable component supply and long-term industrial availability.

Supply support for ZX3CD1S1M832TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance analog and power portfolio for industrial, computing, and consumer markets.

This device belongs to Zetex's MPPS™ (Miniature Package Power Solutions) product line, designed specifically for space-constrained, high-efficiency power management in portable and battery-powered systems.

FAQ

What is the maximum continuous current rating for the PNP transistor and Schottky diode?

The PNP transistor supports −4 A continuous collector current (I_C) at T_A = 25 °C with appropriate PCB copper area (≥8 cm², 2 oz Cu); the Schottky diode supports 1 A continuous forward current (I_F) at T_A = 25 °C. Derating applies above 25 °C ambient, with junction temperature limited to 150 °C (transistor) and 125 °C (diode).

Is the exposed thermal pad electrically connected to any pin?

Yes-the exposed pad is internally connected to pin 1 (Emitter) and must be soldered to a PCB ground plane or dedicated thermal copper pour. This connection provides both mechanical stability and primary thermal conduction path; floating the pad increases R_θJA by >50 °C/W and risks thermal runaway under sustained load.

Can this device replace a standard PNP + Schottky discrete pair in existing layouts?

Yes-if the PCB uses the MLP832 footprint (3 mm × 2 mm, 0.65 mm pitch, 5-terminal layout) and accommodates the 0.9 mm height. Pin mapping matches industry-standard dual-diode PNP placements (Emitter–Base–Collector–Cathode–Anode), and thermal pad stencil design must follow Diodes Inc. AN-2001 guidelines for void-free solder joint formation.

Why does the datasheet list multiple R_θJA values?

R_θJA varies based on PCB copper area, weight, and layout: values range from 41.7 °C/W (85 cm², 2 oz Cu) to 125 °C/W (8 cm², 2 oz Cu, minimal leads). The variation reflects real-world thermal performance under different assembly conditions-not test inconsistency-and must be selected based on actual board design to calculate safe power limits.

ZX3CD1S1M832TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: *

Package/Case:: -

Packaging:: Cut Tape (CT)

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

ZX3CD1S1M832TA FAQ

1.How can I place an order for ZX3CD1S1M832TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZX3CD1S1M832TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZX3CD1S1M832TA reliable?

The price and inventory of ZX3CD1S1M832TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZX3CD1S1M832TA is usually 5 days.

3.What payment methods are accepted for ZX3CD1S1M832TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZX3CD1S1M832TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZX3CD1S1M832TA?

ZX3CD1S1M832TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZX3CD1S1M832TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZX3CD1S1M832TA?

For technical support, including ZX3CD1S1M832TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZX3CD1S1M832TA requirements.

6.How does Aetrix verify that ZX3CD1S1M832TA is sourced from the original manufacturer or authorized distributors?

All ZX3CD1S1M832TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZX3CD1S1M832TA meets industry standards.

7.What is the process for return or replacement of ZX3CD1S1M832TA?

All ZX3CD1S1M832TA units undergo pre-shipment inspection (PSI). If there is an issue with ZX3CD1S1M832TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZX3CD1S1M832TA part is unused and in its original packaging.

Return procedure for ZX3CD1S1M832TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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