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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated ZX3CDBS1M832TA

Name: ZX3CDBS1M832TA
Brand: Diodes Incorporated
SKU: ZX3CDBS1M832TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZX3CDBS1M832TA

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: 8-VDFN Exposed Pad

Datasheet:: ZX3CDBS1M832TA.pdf

Description:: TRANS NPN 20V 4.5A 8MLP

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Product details

Overview

ZX3CDBS1M832TA from Zetex Semiconductors is a dual-die 3mm × 2mm MLP package integrating an NPN low-saturation transistor (V_CEO = 20 V, I_C = 4.5 A, V_CE(sat) = 150 mV @ 1 A) and a 40 V / 1 A Schottky diode (V_F = 425 mV @ 1 A). It serves as a compact power switch + freewheeling diode pair in DC-DC buck converters and battery charging circuits.

For engineers reviewing the ZX3CDBS1M832TA datasheet, ZX3CDBS1M832TA pinout, ZX3CDBS1M832TA application, or ZX3CDBS1M832TA equivalent, this dual-component solution reduces PCB area by 40% versus discrete placement, delivers thermal resistance as low as 41.7 °C/W with 85 cm² copper, and supports continuous operation up to T_j = 150 °C for the transistor and 125 °C for the diode.

Technical Context

The device implements two independent silicon dies-NPN transistor and Schottky diode-co-packaged in a single MLP832 leadframe with shared thermal pad. The transistor features H_FE ≥ 200 at I_C = 10 mA and f_T = 100 MHz, enabling fast switching in synchronous rectifier or PWM control roles.

The Schottky diode exhibits t_rr = 12 ns and C_D = 25 pF at V_R = 25 V, supporting high-frequency (>1 MHz) operation with minimal reverse recovery loss. Both dies share common thermal management via the exposed metal paddle, with R_θJA varying between 41.7–125 °C/W depending on board copper area and weight.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	20 V - Maximum safe collector-emitter voltage during switching; defines upper limit for buck converter input voltage.
I_C (cont.)	4.5 A - Continuous current handling capacity; sufficient for 5 W–10 W DC-DC stages with margin.
V_CE(sat)	150 mV @ 1 A - Ultra-low saturation voltage reduces conduction loss to ≤150 mW per amp, improving efficiency >92% at light loads.
V_F (Schottky)	425 mV @ 1 A - Low forward drop minimizes power dissipation in freewheeling path, critical for thermal budget in sealed mobile enclosures.
t_rr	12 ns - Fast reverse recovery enables use in >1 MHz switching topologies without snubber networks.
R_θJA (max)	41.7 °C/W - Achievable with 85 cm² 2 oz copper; allows 2.45 W dissipation before reaching T_j = 150 °C.
Package	MLP832 (3 mm × 2 mm × 0.9 mm) - Surface-mount micro-leaded package with exposed thermal pad; footprint saves >60% area vs SO-8.

Pinout & Package

Package: MLP832 - 3 mm × 2 mm × 0.9 mm micro-leaded package with exposed thermal pad (pin 1 marked by dot). Thermal pad must be soldered to PCB copper for rated power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1 (E)	Transistor Emitter	Low-impedance return path for transistor current; tied to ground or power rail common node.
2 (C)	Transistor Collector	Main current output terminal; connects to inductor node in buck topology.
3 (B)	Transistor Base	Control input; requires ~125 mA drive at I_C = 4.5 A for full saturation.
4 (A)	Schottky Anode	Connects to switch node (inductor drain); conducts during off-time of transistor.
5 (K)	Schottky Cathode	Connects to output capacitor and load; provides low-loss return path.
6–8 (Thermal Pad)	Common Thermal Reference	Exposed metal pad under package; must be soldered to ≥1 cm² copper pour for thermal performance.

Key Features

Feature	Design Value
Ultra-low V_CE(sat)	150 mV @ 1 A enables <150 mW conduction loss per amp, reducing heatsink need in space-constrained chargers.
H_FE characterization to 6 A	Guaranteed gain ≥100 at I_C = 6 A ensures reliable saturation across full load range without overdriving base.
Fast Schottky t_rr = 12 ns	Eliminates reverse recovery spikes in high-frequency converters, simplifying EMI filter design.
0.9 mm profile	Enables ultra-thin end products (e.g., <8 mm smartphone thickness) where height-critical stacking is required.
Shared thermal pad	Single thermal interface manages both die junctions; eliminates separate thermal vias and layout complexity.

Applications

DC–DC Buck Converters

USB-C Battery Chargers

Use Scenario: Step-down conversion from 5 V/9 V/12 V input to 3.3 V/1.8 V system rails in portable electronics.

IC Role / Device Role / Timing Role: Transistor acts as main synchronous switch; Schottky diode provides freewheeling path during low-side conduction phase.

Use Value: Combined V_CE(sat) + V_F < 600 mV at 1 A reduces total conduction loss by 35% versus discrete MOSFET + Schottky solutions.

Use Scenario: 5 V to 4.2 V linear or switching charger IC front-end for Li-ion cells in smartphones and wearables.

IC Role / Device Role / Timing Role: Transistor regulates charge current; Schottky prevents reverse discharge when input is removed.

Use Value: 0.9 mm height and 3 mm × 2 mm footprint enable integration into ultra-thin charging modules with <1.5 mm board stackup.

Motor Driver Half-Bridge

Power Bank Load Switch

Use Scenario: Low-voltage (≤12 V), low-power (<5 W) brushed DC motor control in IoT actuators and medical devices.

IC Role / Device Role / Timing Role: Transistor drives motor winding; Schottky clamps inductive kickback during PWM off-cycle.

Use Value: 12 ns t_rr and 40 V V_R suppress voltage spikes to <25 V, eliminating need for external TVS in Class II isolation designs.

Use Scenario: Output load switch for 5 V USB power delivery in portable power banks with automatic load disconnect.

IC Role / Device Role / Timing Role: Transistor functions as high-side pass element; Schottky blocks reverse current from battery to input when disconnected.

Use Value: Integrated diode replaces external blocking diode, reducing BOM count by one component and saving 2.5 mm² PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN + Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LSD-13	Separate N-channel MOSFET (30 V, 4.5 A) + discrete Schottky; no integrated thermal coupling.	Requires separate layout, thermal vias, and gate driver; higher gate charge delays switching.	Choose if higher V_DS rating or logic-level drive is needed; not suitable for ultra-thin profiles.
SSM6J313NU,LF	Dual N-channel MOSFET only (no integrated diode); requires external Schottky for flyback path.	Lacks monolithic diode; increases routing complexity and parasitic inductance in high-di/dt paths.	Select when bidirectional switching is required; unsuitable for unidirectional freewheeling applications.

Compared with DMN3020LSD-13 and SSM6J313NU, ZX3CDBS1M832TA delivers lower system-level thermal resistance, reduced PCB area, and guaranteed timing alignment between switch and diode-critical for EMI-sensitive portable power designs.

Availability

ZX3CDBS1M832TA is available at Aetrix Electronics and suitable for DC-DC buck converters, USB-C battery chargers, motor control circuits, and power bank load switches requiring stable component supply and consistent thermal performance across production volumes.

Supply support for ZX3CDBS1M832TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors plc was a UK-based designer of high-performance analog and power semiconductors, acquired by Diodes Incorporated in 2008; legacy Zetex parts maintain full datasheet compliance and manufacturing continuity.

This device belongs to the MPPS™ (Miniature Package Power Solutions) product line, engineered specifically for space-constrained portable power systems requiring co-located switching and freewheeling elements in sub-3 mm footprints.

FAQ

What is the maximum continuous power dissipation for ZX3CDBS1M832TA at 25°C ambient?

The maximum continuous power dissipation depends on PCB layout: with 85 cm² of 2 oz copper, P_D = 2.45 W (transistor-only mode) or 2.4 W (dual-die mode). Derating begins at 19.6 mW/°C above 25°C ambient, limiting usable power to ~1.2 W at 85°C board temperature.

Can the Schottky diode handle reverse recovery stress in synchronous rectification?

Yes-the Schottky diode has no minority-carrier storage, so it exhibits zero reverse recovery charge (Q_rr) and t_rr = 12 ns measured under IF/IR = 500 mA switching. This makes it suitable for synchronous rectifier roles in buck converters up to 2 MHz without shoot-through risk.

Is the thermal pad electrically isolated from internal terminals?

No-the MLP832 thermal pad is internally connected to the transistor emitter (Pin 1) and Schottky cathode (Pin 5). PCB copper connected to the pad must be routed as a common node for both functions; floating or grounded pads will cause functional failure or latch-up.

What is the minimum recommended PCB copper area for full-rated operation?

The datasheet specifies minimum copper dimensions equal to the exposed pad size (0.82 mm × 1.02 mm), but full-rated power requires ≥85 cm² of 2 oz copper split equally under each die. With only 8 cm², derated power drops to 500 mW due to R_θJA = 250 °C/W, making it unsuitable for sustained >0.5 A loads.

ZX3CDBS1M832TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-VDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN + Diode (Isolated)

Current - Collector (Ic) (Max):: 4.5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 270mV @ 125mA, 4.5A

Current - Collector Cutoff (Max):: 25nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2A, 2V

Power - Max:: 3 W

Frequency - Transition:: 140MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-MLP (3x2)

ZX3CDBS1M832TA FAQ

1.How can I place an order for ZX3CDBS1M832TA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZX3CDBS1M832TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZX3CDBS1M832TA reliable?

The price and inventory of ZX3CDBS1M832TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZX3CDBS1M832TA is usually 5 days.

3.What payment methods are accepted for ZX3CDBS1M832TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZX3CDBS1M832TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZX3CDBS1M832TA?

ZX3CDBS1M832TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZX3CDBS1M832TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZX3CDBS1M832TA?

For technical support, including ZX3CDBS1M832TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZX3CDBS1M832TA requirements.

6.How does Aetrix verify that ZX3CDBS1M832TA is sourced from the original manufacturer or authorized distributors?

All ZX3CDBS1M832TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZX3CDBS1M832TA meets industry standards.

7.What is the process for return or replacement of ZX3CDBS1M832TA?

All ZX3CDBS1M832TA units undergo pre-shipment inspection (PSI). If there is an issue with ZX3CDBS1M832TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZX3CDBS1M832TA part is unused and in its original packaging.

Return procedure for ZX3CDBS1M832TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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