Diodes Incorporated ZX5T2E6TA

Overview

ZX5T2E6TA from Diodes Incorporated is a 20V PNP low-saturation switching transistor in SOT26 package, designed for high-current power switching with R_CE(sat) = 31 mΩ, V_CE(sat) ≤ −140 mV at −3.5 A, and continuous collector current of −3.5 A. It serves as a main switch in DC-DC converters, motor control H-bridge legs, and power management load switches.

For engineers reviewing the ZX5T2E6TA datasheet, ZX5T2E6TA pinout, ZX5T2E6TA application, or ZX5T2E6TA equivalent, key selection criteria include guaranteed V_CE(sat) at high I_C, AEC-Q101 qualification, SOT26 thermal performance (R_θJA = 73 °C/W), and h_FE ≥ 150 at −3.5 A.

Technical Context

This PNP bipolar junction transistor operates in saturation mode for low-loss switching, with base-emitter turn-on voltage V_BE(on) = −0.8 to −0.9 V at −3.5 A and V_CE = −2 V. Its f_T = 110 MHz supports fast switching up to ~100 ns t_on/325 ns t_off under −10 V V_CC, −2 A I_C conditions.

Thermal design relies on its low R_θJL = 18.6 °C/W (junction-to-lead) and validated derating: 1.7 W at T_A = 25 °C, linearly reduced by 13.6 mW/°C above 25 °C per Note 6. Safe operating area (SOA) is specified for single-pulse durations down to 100 µs.

Key Specifications

Pinout & Package

Package: SOT26 - Surface-mount, 6-pin plastic package with exposed collector leads for enhanced thermal conduction; weight ≈ 0.015 g; moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Compared with DMT3005LKQ and ZXTP2012Z, ZX5T2E6TA delivers superior thermal performance via SOT26 dual-collector layout and higher I_C rating, making it optimal for sustained 3–3.5 A switching in compact industrial power stages.

Availability

ZX5T2E6TA is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and power management functions requiring stable component supply and AEC-Q101-compliant reliability.

Supply support for ZX5T2E6TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The ZX5T2E6 belongs to Diodes' high-current PNP switching transistor product line, engineered for automotive and industrial power conversion where low saturation voltage and AEC-Q101 qualification are mandatory.

FAQ

What is the maximum safe operating temperature for ZX5T2E6TA?

The device supports junction temperatures from −55 °C to +150 °C. With R_θJA = 73 °C/W (Note 6), maximum ambient temperature is +105 °C at 1.7 W dissipation. Derating begins at 25 °C ambient, reducing power by 13.6 mW/°C above that point.

Can ZX5T2E6TA replace an N-channel MOSFET in a high-side switch?

No - it is a PNP bipolar transistor requiring continuous base current for saturation. Unlike MOSFETs, it lacks voltage-controlled gating. However, it can serve as a high-side switch when paired with a level-shifting base driver, offering lower gate-drive complexity than high-side N-MOSFETs in low-frequency (<100 kHz) applications.

Is ZX5T2E6TA pin-compatible with other SOT26 transistors?

Yes - it follows standard SOT26 pinout (C-E-B-C-E), confirmed by Diodes' AP02002 package drawing. Pin 1 = Collector, Pin 2 = Emitter, Pin 3 = Base, Pins 4 & 5 = Collector, Pin 6 = Emitter. This matches industry-standard SOT26 PNP layouts such as ZXTN25050DFH.

Does ZX5T2E6TA require external base resistors in microcontroller-driven circuits?

Yes - to limit base current to −350 mA at saturation, a series resistor is required. For a 3.3 V GPIO driving the base with V_BE(sat) ≈ −1.0 V, a 6.6 Ω resistor sets I_B ≈ −350 mA. A 10 Ω resistor provides margin, yielding ~230 mA I_B and acceptable h_FE-based saturation at ≤2.5 A I_C.