Diodes Incorporated ZX5T3ZTA

Overview

ZX5T3ZTA from Diodes Incorporated is a 40V PNP low-saturation transistor in SOT89 package, designed for high-current switching in power circuits. It delivers -5.5A continuous collector current, -15A peak pulse current, and achieves V_CE(sat) < -60mV at -1A with R_CE(sat) = 29mΩ - enabling efficient operation in DC-DC converters and MOSFET/IGBT gate drivers.

For engineers reviewing the ZX5T3ZTA datasheet, ZX5T3ZTA pinout, ZX5T3ZTA application, or ZX5T3ZTA equivalent, key selection criteria include verified PNP polarity, SOT89 thermal performance (R_θJL = 2.81°C/W), -40V V_CEO rating, h_FE ≥ 110 up to -5.5A, and automotive-grade packaging compliance (AEC-Q101 capable).

Technical Context

This PNP bipolar junction transistor operates with emitter-grounded configuration and requires base current drive for saturation. Its low V_CE(sat) and high h_FE up to -5.5A support stable conduction in high-side switch topologies where minimal voltage drop and thermal rise are critical.

The SOT89 package features an exposed collector pad thermally coupled to PCB copper, delivering R_θJA as low as 42°C/W on 25mm×25mm 1oz Cu - essential for sustained -5.5A operation without forced cooling in space-constrained power stages.

Key Specifications

Pinout & Package

Package: SOT89 - surface-mount plastic package with exposed collector pad for enhanced thermal transfer; 0.05g mass; UL 94V-0 rated; moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Compared with ZXTP2025ZTA and MJD44H11T4G, ZX5T3ZTA uniquely balances -40V rating, -5.5A capability, and SOT89 thermal performance (R_θJL = 2.81°C/W), making it optimal for space-constrained 24–40V power stages needing <100mV conduction loss.

Availability

ZX5T3ZTA is available at Aetrix Electronics and suitable for automotive charging circuits, industrial DC-DC converters, and brushed DC motor controls requiring stable component supply, AEC-Q101-aligned manufacturing, and consistent SOT89 thermal behavior.

Supply support for ZX5T3ZTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

ZX5T3ZTA belongs to Diodes' high-current PNP transistor product line, engineered specifically for thermally demanding power switching roles in automotive and industrial systems where low saturation voltage and robust thermal performance are mandatory.

FAQ

What is the maximum continuous collector current for ZX5T3ZTA?

The ZX5T3ZTA supports -5.5A continuous collector current at T_A = +25°C with appropriate PCB copper area (25mm×25mm 1oz Cu). Derating applies above +25°C ambient per Figure 2 in DS33419; at +100°C, max I_C drops to approximately -3.3A under same layout conditions.

Is ZX5T3ZTA qualified for automotive applications?

ZX5T3ZTA is manufactured in IATF 16949 certified facilities and supports PPAP documentation. While not pre-certified to AEC-Q101 in standard form, Diodes confirms it meets AEC-Q101 stress test requirements upon customer request - making it suitable for automotive power control applications with change-controlled qualification.

How does the SOT89 package improve thermal performance?

The SOT89 package uses an exposed collector pad soldered directly to PCB copper, achieving R_θJL = 2.81°C/W. With 25mm×25mm 1oz Cu, R_θJA reaches 42°C/W - enabling 3.0W pulsed or 1.5W continuous power dissipation without external heatsinking, critical for sustained -5.5A operation.

Can ZX5T3ZTA replace NPN transistors in existing designs?

No - ZX5T3ZTA is a PNP transistor and cannot directly substitute for NPN devices without circuit topology changes. Its emitter must be at higher potential than collector, requiring inverted biasing and complementary drive logic. Replacement requires redesign of base drive network and signal polarity handling.