Diodes Incorporated ZX5T3ZTC
- Part No.:
- ZX5T3ZTC
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
ZX5T3ZTC.pdf
- Description:
- TRANS PNP 40V 5.5A SOT-89-3
- Quantity:
- Payment:

- Shipping:

Inventory:6,544
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Product details
Overview
ZX5T3ZTC from Diodes Incorporated is a 40V PNP low-saturation transistor in SOT89 package, rated for -5.5A continuous collector current and -15A peak pulse current, with VCE(sat) < -60mV at -1A and RCE(sat) = 29mΩ. It serves as a high-current power switch in DC-DC converters, motor controls, and MOSFET/IGBT gate drivers where low conduction loss and thermal robustness are critical.
For engineers reviewing the ZX5T3ZTC datasheet, ZX5T3ZTC pinout, ZX5T3ZTC application, or ZX5T3ZTC equivalent, key selection criteria include verified PNP polarity, SOT89 thermal performance (RθJL = 2.81°C/W), -40V VCEO rating, hFE ≥ 110 at -5.5A, and automotive-grade packaging compliance (Moisture Sensitivity Level 1, halogen/antimony-free).
Technical Context
This PNP bipolar junction transistor operates in linear or saturated switching mode with specified hFE up to -10A, enabling stable current gain under high-load conditions. Its low VCE(sat) and RCE(sat) minimize power dissipation during conduction, while the exposed collector pad supports efficient heat transfer via PCB copper area.
The device features JEDEC-standard ESD ratings (4kV HBM, 400V MM) and operates across -55°C to +150°C. Thermal derating curves confirm usable power dissipation up to 3.0W with optimized 25mm×25mm 1oz copper layout, making it suitable for thermally constrained industrial power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -40V - Maximum safe collector-emitter voltage before breakdown in open-base configuration |
| IC (cont.) | -5.5A - Continuous collector current capability without thermal runaway under defined PCB copper area |
| VCE(sat) | < -60mV @ -1A - Ensures ≤60mW conduction loss per ampere at nominal load |
| hFE | 110–550 - Current gain maintained up to -5.5A, supporting reliable base drive sizing |
| RθJL | 2.81°C/W - Junction-to-lead thermal resistance enables direct heat path to PCB copper via exposed collector pad |
| ESD HBM | 4,000V - Robustness against human-body-model electrostatic discharge during handling and assembly |
| Moisture Sensitivity | Level 1 per J-STD-020 - No bake requirement prior to reflow, simplifying manufacturing flow |
Pinout & Package
Package: SOT89 - Surface-mount plastic package with exposed collector pad for enhanced thermal dissipation; dimensions per Diodes' outline drawing (D2 = 1.71 mm, E2 = 2.20 mm, L = 1.05 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Emitter) | E | Current source terminal; connects to higher potential node in PNP switching configuration |
| Pin 2 (Base) | B | Control input; requires negative base current relative to emitter to saturate transistor |
| Pin 3 (Collector) | C | Main current sink terminal; electrically and thermally connected to exposed metal pad on underside |
Key Features
| Feature | Design Value |
|---|---|
| Low saturation voltage | VCE(sat) < -60mV @ -1A enables <60mW conduction loss, reducing thermal stress in compact power stages |
| High current gain at full load | hFE ≥ 110 @ -5.5A ensures predictable base drive requirements without overdesigning driver circuitry |
| Exposed collector thermal pad | RθJL = 2.81°C/W provides direct thermal path to PCB, supporting 3.0W dissipation with 25mm×25mm copper |
| Automotive-ready packaging | Halogen/antimony-free, RoHS 3 compliant, MSL Level 1 - meets environmental and manufacturability requirements for automotive and industrial use |
Applications
| DC-DC Converters | MOSFET/IGBT Gate Driving |
|---|---|
Use Scenario: High-efficiency synchronous buck converter output stage using PNP transistor for active freewheeling or auxiliary control. IC Role / Device Role / Timing Role: PNP power switch operating in saturation to minimize forward voltage drop during current recirculation. Use Value: VCE(sat) < -60mV reduces conduction loss by >40% versus standard PNP transistors, improving efficiency at 5–10A loads. | Use Scenario: Negative-voltage gate driver stage for high-side N-channel MOSFETs or IGBTs requiring fast turn-off. IC Role / Device Role / Timing Role: Active pull-down switch delivering high peak current (-15A) to rapidly discharge gate capacitance. Use Value: ICM = -15A and low RCE(sat) = 29mΩ enable sub-100ns fall times without gate resistor overdesign. |
| Motor Control (BLDC/H-Bridge) | Charging Circuits (USB PD, Battery) |
Use Scenario: Low-side current sensing or phase-leg switching in 12–48V brushless DC motor controllers. IC Role / Device Role / Timing Role: High-current PNP switch used in current mirror or protection logic with precise hFE stability up to -5.5A. Use Value: hFE specification up to -10A ensures consistent current mirroring accuracy across temperature and load variation. | Use Scenario: Reverse-polarity protection or load-switching element in USB Power Delivery adapters and multi-cell battery chargers. IC Role / Device Role / Timing Role: Series PNP pass transistor controlling charging path with low dropout and minimal heat generation. Use Value: RCE(sat) = 29mΩ limits voltage drop to <160mV at 5.5A, preserving charging headroom and reducing thermal footprint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZX5T3ZTA | Identical die and electrical specs; differs only in reel size (1,000 pcs vs. 4,000 pcs) and tape width (12mm vs. 12mm), same SOT89 package and marking "53Z" | No functional difference; selected for smaller-volume prototyping or JIT production runs | Choose ZX5T3ZTA when lower minimum order quantity or faster sampling is required |
| DMT3005LKQ | PNP MOSFET (not BJT); VDS = -30V, RDS(on) = 22mΩ @ VGS = -10V; no hFE or base current dependency | Replaces BJT with voltage-controlled switch; eliminates base drive complexity but requires negative gate bias | Prefer DMT3005LKQ when gate drive architecture supports MOSFET-level control and -30V rating suffices |
Compared with ZX5T3ZTA, the ZX5T3ZTC offers identical performance with higher packing density; versus DMT3005LKQ, it trades gate-drive simplicity for inherent current-gain linearity and lower gate-drive power, making it preferable in base-driven analog feedback loops or cost-sensitive BJT-based designs.
Availability
ZX5T3ZTC is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and charging circuits requiring stable component supply, long-term lifecycle support, and automotive-grade material compliance.
Supply support for ZX5T3ZTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
The ZX5T3Z belongs to Diodes' high-current PNP transistor product line, engineered for thermally demanding power switching applications where low saturation voltage, robust pulse current capability, and MSL Level 1 packaging are essential.
FAQ
What is the maximum allowable continuous collector current for ZX5T3ZTC at 85°C ambient?
At TA = 85°C, the maximum continuous collector current is derated to approximately -3.7A based on the 25mm×25mm 1oz copper derating curve (Figure 2). This assumes still-air conditions and proper thermal pad soldering; exceeding this value risks junction temperature exceeding 150°C.
Is ZX5T3ZTC qualified to AEC-Q101 for automotive use?
No - the datasheet states that AEC-Q101 qualification requires specific change control and PPAP capability, and users must contact Diodes directly to request automotive-grade versions. ZX5T3ZTC itself is not listed as AEC-Q101 qualified in DS33419 Rev. 3-2.
Can ZX5T3ZTC replace an NPN transistor in a circuit?
No - ZX5T3ZTC is a PNP transistor with opposite polarity and current flow direction. Replacing an NPN requires inverting the supply topology, reversing biasing, and redesigning base drive. It is not a drop-in substitute for NPN devices like MMBT4401 or BC817.
What is the recommended PCB pad layout for optimal thermal performance?
Diodes specifies a 25mm×25mm 1oz copper area connected to the exposed collector pad (Pin 3) for rated 3.0W dissipation. The pad layout must match SOT89 outline dimensions (E2 = 2.20 mm, D2 = 1.71 mm) and include thermal vias to inner/ground layers if multilayer boards are used.
ZX5T3ZTC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 5.5 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 185mV @ 550mA, 5.5A
- Current - Collector Cutoff (Max):
- 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 500mA, 2V
- Power - Max:
- 2.1 W
- Frequency - Transition:
- 152MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-89-3
ZX5T3ZTC FAQ
1.How can I place an order for ZX5T3ZTC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZX5T3ZTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZX5T3ZTC reliable?
The price and inventory of ZX5T3ZTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZX5T3ZTC is usually 5 days.
3.What payment methods are accepted for ZX5T3ZTC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZX5T3ZTC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZX5T3ZTC?
ZX5T3ZTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZX5T3ZTC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZX5T3ZTC?
For technical support, including ZX5T3ZTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZX5T3ZTC requirements.
6.How does Aetrix verify that ZX5T3ZTC is sourced from the original manufacturer or authorized distributors?
All ZX5T3ZTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZX5T3ZTC meets industry standards.
7.What is the process for return or replacement of ZX5T3ZTC?
All ZX5T3ZTC units undergo pre-shipment inspection (PSI). If there is an issue with ZX5T3ZTC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZX5T3ZTC part is unused and in its original packaging.
Return procedure for ZX5T3ZTC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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