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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated ZX5T851GQTC

Name: ZX5T851GQTC
Brand: Diodes Incorporated
SKU: ZX5T851GQTC
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZX5T851GQTC

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: ZX5T851GQTC.pdf

Description:: TRANS NPN 60V 6A SOT-223-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZX5T851GQ from Diodes Incorporated is a 60V NPN medium-power bipolar junction transistor (BJT) qualified for automotive applications, featuring 6A continuous collector current, <60mV V_CE(sat) at 1A, 35mΩ equivalent on-resistance, AEC-Q101 qualification, and SOT223 packaging. It serves as a high-current switching element in gate drivers and solenoid control circuits where low saturation voltage and thermal robustness are critical.

For engineers reviewing the ZX5T851GQ datasheet, ZX5T851GQ pinout, ZX5T851GQ application, or ZX5T851GQ equivalent, key selection criteria include verified V_CE(sat) performance at 6A, h_FE stability up to 10A, thermal resistance (R_θJA = 41.7°C/W on 50mm × 50mm 2oz Cu), and AEC-Q101 compliance for automotive-grade reliability.

Technical Context

This NPN BJT operates with a minimum BV_CEO of 60V and supports pulsed peak currents up to 20A. Its gain (h_FE) is specified from 20–300 across 10mA–10A collector current, enabling stable switching across wide load ranges.

The device delivers V_CE(sat) ≤ 60mV at IC = 1A/IB = 100mA and ≤ 260mV at IC = 6A/IB = 300mA, with f_T = 130MHz ensuring adequate bandwidth for fast-switching gate drive applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions.
I_C (Continuous)	6 A - Sustained DC collector current capability with proper PCB copper area (50mm × 50mm 2oz Cu).
V_CE(sat)	≤60 mV @ 1A - Enables <0.06W conduction loss per switch at 1A, reducing thermal stress in driver stages.
h_FE	20–300 - Gain range validated up to 10A, supporting reliable base drive design across operating current extremes.
R_θJA	41.7 °C/W - Junction-to-ambient thermal resistance measured on 50mm × 50mm 2oz Cu FR4, defining heatsinking requirements.
f_T	130 MHz - Current gain-bandwidth product confirming suitability for high-speed switching (e.g., MOSFET gate driving at >100kHz).
ESD HBM	4000 V - Human Body Model rating ensures robustness during board assembly and handling in production environments.

Pinout & Package

Package: SOT223 - Surface-mount plastic package with exposed collector tab for enhanced thermal dissipation; 0.112g mass; UL 94V-0 rated molding compound; moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Current sink terminal	Connected to ground or low-side return path; requires low-inductance layout for fast switching.
Base (B)	Control input	Drives transistor into saturation; requires ≥100mA drive capability at 6A I_C for full turn-on.
Collector (C)	High-current output node	Exposed metal tab - must be soldered to large copper pour for thermal management and electrical connection.

Key Features

Feature	Design Value
Low saturation voltage	V_CE(sat) ≤ 60mV @ 1A reduces power loss and self-heating in high-duty-cycle switching.
AEC-Q101 qualification	Validated for automotive temperature range (−55°C to +150°C) and reliability testing per JESD22 standards.
High gain at high current	h_FE ≥ 20 @ I_C = 10A enables simplified base drive circuitry without excessive current sourcing.
Green construction	Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb), RoHS 3 compliant, UL 94V-0 flammability rating.

Applications

Emergency Lighting Control

MOSFET Gate Driver

Use Scenario: High-reliability DC-DC boost stage in vehicle emergency lighting systems requiring fail-safe current switching during battery brownout.

IC Role / Device Role / Timing Role: NPN switch controlling primary-side current in boost converter, driven by PWM controller.

Use Value: Low V_CE(sat) minimizes voltage drop across switch, preserving headroom for LED string regulation at low battery voltages.

Use Scenario: Totem-pole driver stage for high-side N-channel MOSFETs in automotive motor controllers.

IC Role / Device Role / Timing Role: Medium-power NPN pull-down switch providing fast gate discharge path during MOSFET turn-off.

Use Value: 130MHz f_T and 760ns t_off enable sub-microsecond gate discharge, reducing shoot-through risk in half-bridge configurations.

Solenoid Actuator Driver

Automotive DC Module

Use Scenario: 12V/24V solenoid interface in transmission shift control modules, cycling at 10–50Hz with 500ms dwell time.

IC Role / Device Role / Timing Role: High-current saturated switch delivering 6A pulses to inductive load with flyback protection.

Use Value: 20A I_CM rating accommodates inductive kickback surges without secondary clamping components.

Use Scenario: Power distribution switch in body control module (BCM) supplying auxiliary loads (e.g., HVAC actuators, mirror heaters).

IC Role / Device Role / Timing Role: Load switch managing up to 6A DC loads with overtemperature and overcurrent fault tolerance.

Use Value: R_θJA = 41.7°C/W allows operation at full current with ambient up to +105°C when mounted on 50mm × 50mm 2oz Cu.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZX5T851GQTC (same part)	Identical specification and marking; TC suffix denotes tape-and-reel packaging (4000 pcs/reel, 12mm tape).	No functional difference - same automotive qualification, thermal specs, and pinout.	Select for volume production with automated pick-and-place compatibility.
ZX5T951GQ	Complementary PNP device with matching V_CEO = 60V, I_C = 6A, and AEC-Q101 qualification.	Used in push-pull or complementary emitter-follower configurations, not direct replacement.	Choose only when designing symmetrical output stages requiring matched NPN/PNP pairs.

Compared with ZX5T951GQ, the ZX5T851GQ provides higher h_FE at low currents and optimized V_CE(sat) for single-ended switching, while the PNP counterpart suits complementary topologies-neither offers pin-compatible substitution without circuit redesign.

Availability

ZX5T851GQ is available at Aetrix Electronics and suitable for automotive body control modules, industrial solenoid drivers, and DC-DC gate driver circuits requiring stable component supply, AEC-Q101 compliance, and consistent thermal performance across temperature extremes.

Supply support for ZX5T851GQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF16949 certified facilities.

The ZX5T851GQ belongs to Diodes' automotive-qualified medium-power BJT family, engineered specifically for high-current switching in harsh-environment applications where low saturation voltage and thermal resilience are mandatory.

FAQ

What is the maximum allowable junction temperature for ZX5T851GQ?

The ZX5T851GQ has an operating junction temperature range of −55°C to +150°C, with thermal derating beginning above +25°C ambient. At 6A continuous current, junction temperature must remain below +150°C using the specified 50mm × 50mm 2oz Cu pad layout and still-air conditions.

Is ZX5T851GQ suitable for linear regulator applications?

No - the ZX5T851GQ is optimized for saturated switching, not linear operation. Its low V_CE(sat) and high gain are designed for on/off control, and sustained linear-mode operation risks exceeding its 3.0W maximum power dissipation and triggering thermal runaway.

Does the SOT223 package require thermal vias for standard operation?

Thermal vias are recommended but not mandatory for nominal 6A operation. The datasheet specifies R_θJA = 41.7°C/W assumes the collector tab is soldered to ≥50mm² of 2oz copper; adding ≥4 thermal vias (0.3mm diameter, filled) beneath the tab further reduces R_θJA by ~15%.

How does the ZX5T851GQ compare to general-purpose transistors like MMBT4401?

The ZX5T851GQ delivers 6× higher continuous current (6A vs. 0.6A), 10× lower V_CE(sat) at rated current, AEC-Q101 qualification, and automotive-grade thermal specs - making it unsuitable for direct substitution in low-power logic circuits but essential for automotive-grade power switching.

ZX5T851GQTC Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 6 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 260mV @ 300mA, 6A

Current - Collector Cutoff (Max):: 20nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 2A, 1V

Power - Max:: 1.2 W

Frequency - Transition:: 130MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-3

ZX5T851GQTC FAQ

1.How can I place an order for ZX5T851GQTC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZX5T851GQTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZX5T851GQTC reliable?

The price and inventory of ZX5T851GQTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZX5T851GQTC is usually 5 days.

3.What payment methods are accepted for ZX5T851GQTC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZX5T851GQTC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZX5T851GQTC?

ZX5T851GQTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZX5T851GQTC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZX5T851GQTC?

For technical support, including ZX5T851GQTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZX5T851GQTC requirements.

6.How does Aetrix verify that ZX5T851GQTC is sourced from the original manufacturer or authorized distributors?

All ZX5T851GQTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZX5T851GQTC meets industry standards.

7.What is the process for return or replacement of ZX5T851GQTC?

All ZX5T851GQTC units undergo pre-shipment inspection (PSI). If there is an issue with ZX5T851GQTC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZX5T851GQTC part is unused and in its original packaging.

Return procedure for ZX5T851GQTC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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