Diodes Incorporated ZX5T955GTC

Overview

ZX5T955GTC from Diodes Incorporated is a PNP medium-power low-saturation transistor in SOT223 package, rated for −140 V V_CEO, −4 A continuous collector current, and −120 mV V_CE(sat) at −1 A. It delivers high gain (h_FE ≥ 45 @ −10 A) and low on-resistance (R_SAT = 92 mΩ), serving as a high-side switch in SLIC and motor drive circuits.

For engineers reviewing the ZX5T955GTC datasheet, ZX5T955GTC pinout, ZX5T955GTC application, or ZX5T955GTC equivalent, key selection criteria include its AEC-Q101 qualification, −10 A peak pulse capability, thermal resistance of 41.7 °C/W (52 mm × 52 mm 2 oz Cu), and −7 V V_EBO for robust base-emitter protection in high-voltage switching.

Technical Context

This PNP bipolar junction transistor operates with fixed-current gain control across wide collector current range (−100 mA to −10 A), maintaining h_FE ≥ 5 at −10 A under V_CE = −5 V. Its safe operating area supports pulsed operation up to 100 ms at −140 V/−1 A with derated power dissipation.

The device uses a planar epitaxial die structure with optimized emitter-base geometry to achieve low V_BE(sat) (−940 mV @ −3 A) and fast switching (t_ON = 42 ns, t_OFF = 636 ns), enabling efficient line switching in telecom and industrial power control.

Key Specifications

Pinout & Package

Package: SOT223 - Surface-mount plastic package with exposed collector tab for thermal conduction and mechanical anchoring; 0.112 g weight; UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Compared with ZX5T955GTC, ZX5T953GTC trades voltage headroom for cost reduction in lower-voltage systems, while MJD44H11T4G offers higher current capacity at the expense of thermal performance and footprint size-making ZX5T955GTC optimal for compact, high-voltage, medium-current switching where SOT223 integration is critical.

Availability

ZX5T955GTC is available at Aetrix Electronics and suitable for subscriber line interface cards, industrial motor drivers, high-voltage line switching, and redundant power OR-ing circuits requiring stable component supply and AEC-Q101 reliability assurance.

Supply support for ZX5T955GTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and communications markets.

The ZX5T955G series belongs to Diodes' high-voltage PNP transistor product line, engineered specifically for robust high-side switching in telecom infrastructure and industrial power control where voltage margin, thermal efficiency, and long-term stability are critical.

FAQ

What is the maximum allowable junction temperature for ZX5T955GTC?

The absolute maximum junction temperature is +150 °C, with storage temperature ranging from −55 °C to +150 °C. Operation above +150 °C risks permanent degradation of h_FE and increased leakage; thermal design must ensure T_J remains below this limit using the specified R_θJA values and appropriate PCB copper area.

Can ZX5T955GTC be used in linear amplifier applications?

No-this device is optimized for switching operation, not linear amplification. Its h_FE variation across collector current (45–225) and lack of guaranteed linearity parameters (e.g., distortion, f_T flatness) make it unsuitable for analog signal amplification; use dedicated RF or audio transistors instead.

Is the collector tab electrically isolated in ZX5T955GTC?

No-the collector is directly connected to the exposed metal tab in the SOT223 package. This tab must be electrically tied to the collector node and thermally bonded to a large copper plane; isolation would require insulating hardware or alternative packaging such as SOT-89 or TO-252.

Does ZX5T955GTC support pulse-width modulation (PWM) drive?

Yes-it supports PWM operation up to ~100 kHz with proper base drive design. Its 42 ns t_ON/636 ns t_OFF and low stored charge enable clean transitions, but base resistor selection must ensure sufficient I_B (≥−100 mA for −1 A I_C) to avoid slow turn-on and excessive switching loss.