Diodes Incorporated ZXGD3111N7TC

Overview

ZXGD3111N7TC from Diodes Incorporated is a 200V active OR'ing MOSFET controller in SO-7 package, designed to drive low-R_DS(ON) N-channel MOSFETs as ideal diodes in high- or low-side PSU configurations. It features a -3mV turn-off threshold (±2mV tolerance), <600ns turn-off time, and supports ±200V rail operation with <1mA quiescent current-enabling efficient redundancy in telecom 48V DC systems.

For engineers reviewing the ZXGD3111N7TC datasheet, ZXGD3111N7TC pinout, ZXGD3111N7TC application, or ZXGD3111N7TC equivalent, key selection criteria include differential drain-sense accuracy, gate drive sink/source capability (5A/2A peak), thermal derating under 15mm×15mm copper, and compatibility with high-voltage (-48V/+48V) redundant power architectures.

Technical Context

The ZXGD3111N7TC implements a precision differential amplifier that continuously monitors V_DS across an external MOSFET via DRAIN and GND/PGND terminals. Its comparator output drives a high-current gate driver stage capable of sourcing 0.66A and sinking 3.3A into 47nF load, enabling fast MOSFET switching with t_D(FALL) <400ns and t_F <131ns.

Operation is rail-agnostic: it functions on both positive and negative supply rails up to ±200V, with V_CC limited to 4–20V and gate output clamped at 12V when V_CC >12V. The device enters rapid shutdown (<600ns) when V_DS exceeds -1mV, blocking reverse current to protect common bus voltage integrity during PSU fault or hot-swap events.

Key Specifications

Pinout & Package

Package: SO-7 (Surface-mount, 7-pin, molded plastic, UL 94V-0, 0.074g). Pin 1–2 and 5–6 are internally connected GND/PGND pairs for low-inductance source return; Pin 7 is dedicated DRAIN sense input; Pin 4 is high-current GATE driver output with 12V clamp.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar active OR'ing controller applications.

Compared with LM5050-1MK/NOPB and TPS2410PWR, ZXGD3111N7TC uniquely supports ±200V operation with factory-trimmed -3mV turn-off, enabling higher-efficiency ideal diode performance in telecom and industrial infrastructure where rail voltage headroom and reverse-current speed are non-negotiable.

Availability

ZXGD3111N7TC is available at Aetrix Electronics and suitable for telecom power supplies, data center server redundancy, and industrial hot-swap modules requiring stable component supply and long-term lifecycle assurance.

Supply support for ZXGD3111N7TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial and communications markets.

The ZXGD series targets high-voltage active OR'ing applications, with the ZXGD3111N7TC engineered specifically for fault-tolerant, high-efficiency DC power distribution in telecom, data center, and ruggedized industrial equipment.

FAQ

What is the recommended gate resistor value for a 5mΩ 100V MOSFET in a -48V low-side OR'ing configuration?

For a 5mΩ 100V MOSFET (Q_g ≈ 85nC), use R_G = 4.7Ω to achieve ~500ns turn-on time while limiting peak gate current to <1.5A. This balances switching loss reduction against gate driver stress and ensures V_GS rise remains monotonic without oscillation due to PCB trace inductance.

Can ZXGD3111N7TC be used with P-channel MOSFETs in high-side configurations?

No-ZXGD3111N7TC is designed exclusively for N-channel MOSFETs. Its gate driver outputs a positive voltage relative to source (GND/PGND), which enhances N-MOSFET channels. Driving a P-MOSFET would require inverted logic and negative gate swing, which this device does not support.

How does the device handle voltage transients exceeding 200V on the DRAIN pin?

The absolute maximum DRAIN voltage is 200V. Transients above this rating risk junction breakdown. For systems exposed to lightning or inductive kick, add a TVS diode (e.g., SMAJ200A) from DRAIN to PGND with <100ps response and clamping <220V to protect the internal comparator input stage.

Is the -3mV turn-off threshold affected by temperature drift, and what is its variation over -50°C to +125°C?

Yes-the turn-off threshold varies from -2.0mV at -50°C to -0.8mV at +125°C (per DS38273 Fig. 7). This 1.2mV total drift remains within ±2mV tolerance band, ensuring reliable reverse-current blocking across full industrial temperature range without recalibration.