Diodes Incorporated ZXMS6004DT8TA

Overview

ZXMS6004DT8TA from Diodes Incorporated is a dual-channel, 60V N-channel self-protected enhancement-mode IntelliFET™ MOSFET in SM8 package. It delivers 1.2 A nominal load current at 5 V input, features 500 mΩ typical R_DS(on), integrated active over-voltage clamping (60 V), and independent per-channel thermal/over-current/ESD protection. It serves as a rugged, logic-level–driven low-side power switch for automotive and industrial DC loads.

For engineers reviewing the ZXMS6004DT8TA datasheet, ZXMS6004DT8TA pinout, ZXMS6004DT8TA application, or ZXMS6004DT8TA equivalent, key selection criteria include dual-channel independence, 3.3 V/5 V logic compatibility, 210 mJ unclamped inductive energy rating, and auto-recovering fault protection-critical for relay replacement and high-inrush switching in harsh environments.

Technical Context

The ZXMS6004DT8TA integrates two fully isolated low-side MOSFET channels with independent protection circuitry: active clamp limits V_DS to 60–70 V during transients, thermal shutdown triggers at 150–175 °C with 10 °C hysteresis, and current limiting activates only in saturation (0.7–2.2 A range). Each channel accepts 0–5.5 V logic input with ≤200 µA drive current.

It operates across –40 °C to +125 °C ambient, supports linear-mode operation with thermal-limited DC current (up to 1.2 A at 25 °C), and sustains 210 mJ unclamped inductive energy (T_j = 25 °C, I_D = 0.5 A, V_DD = 24 V). Protection remains active down to low V_DS, preserving safe operation without compromising on-state efficiency.

Key Specifications

Pinout & Package

Supplied in compact SM8 surface-mount package (dual-channel SO-8 variant), with exposed drain paddle for thermal enhancement. Pin assignments are validated per Diodes DS32245 Rev. 1–2 functional block diagram and ordering information.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel protected low-side switch applications.

Compared with BTS716G and VNQ7E100AJ, the ZXMS6004DT8TA uniquely combines 60 V active clamping, dual-channel autonomy, 210 mJ energy handling, and 4 kV HBM ESD in a single SM8 package-making it optimal for space-constrained, high-transient automotive and industrial switching where protection integrity cannot be compromised.

Availability

ZXMS6004DT8TA is available at Aetrix Electronics and suitable for automotive lighting control, industrial motor drives, programmable power distribution units, and solid-state relay replacements requiring stable component supply and long-term lifecycle assurance.

Supply support for ZXMS6004DT8TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

The ZXMS6004DT8TA belongs to Diodes' IntelliFET™ family-engineered specifically for ruggedized, self-protected low-side switching in harsh environments where discrete MOSFETs require external protection circuitry.

FAQ

What is the maximum continuous current per channel at 85 °C ambient?

At T_A = 85 °C, the ZXMS6004DT8TA supports 0.75 A per channel with one active die on a 25 mm × 25 mm FR4 PCB (R_θJA = 108 °C/W). Derating follows 9.28 mW/°C from 1.16 W at 25 °C. This assumes adequate copper area and still-air conditions; forced airflow or thermal vias improve performance.

Can ZXMS6004DT8TA drive inductive loads without external flyback diodes?

Yes-the integrated active clamp circuit limits V_DS to 60–70 V during inductive turn-off, eliminating need for external freewheeling diodes in most 24 V systems. However, for loads exceeding 210 mJ unclamped energy (e.g., large solenoids), supplemental clamping is recommended per DS32245 Section 4.

How does thermal shutdown interact with current limiting during a short circuit?

During short circuit, current limiting engages first (0.7–2.2 A range), limiting power dissipation. If junction temperature reaches 150–175 °C, thermal shutdown overrides and disables the channel. Both protections auto-recover when fault clears-no external reset required.

Is the SM8 package lead-free and RoHS-compliant?

Yes-ZXMS6004DT8TA is manufactured in a lead-free, RoHS-compliant SM8 package per Diodes Incorporated's product compliance documentation (PB100013 Rev. C). The device meets JEDEC J-STD-020 moisture sensitivity level 1 and qualifies for standard reflow profiles.