Diodes Incorporated ZXMS6004N8-13

Overview

ZXMS6004N8-13 from Diodes Incorporated is a 60V N-channel self-protected IntelliFET® MOSFET in SO-8 package, designed as a logic-level low-side power switch. It delivers 1.3A nominal load current at 5V input, features 400–600mΩ R_DS(on), integrated active overvoltage clamping (60–70V), and thermal shutdown with auto-restart - enabling robust switching of lamps, motors, and inductive loads in 12V/24V DC industrial control systems.

For engineers reviewing the ZXMS6004N8-13 datasheet, ZXMS6004N8-13 pinout, ZXMS6004N8-13 application, or ZXMS6004N8-13 equivalent, this device serves as a μC-compatible, fault-tolerant replacement for electromechanical relays and unprotected discrete MOSFETs in harsh-environment switching applications requiring short-circuit, overtemperature, and ESD resilience.

Technical Context

The ZXMS6004N8-13 integrates protection circuitry directly into the die: overcurrent limiting activates only in saturation (not during full conduction), thermal shutdown triggers at 150°C with 10°C hysteresis, and active clamp limits V_DS to ≤70V during inductive flyback. Its logic-level gate accepts 3.3V/5V drive without external level-shifting.

It operates across –40°C to +125°C ambient, supports linear-mode current limiting below 36V drain-source voltage, and maintains safe operation up to 2.5A pulsed drain current at 5V gate drive - all while dissipating ≤1.65W at 25°C on a 1-inch² copper pad (R_θJA = 76°C/W).

Key Specifications

Pinout & Package

Package: SO-8, surface-mount, lead-free, RoHS-compliant, 80.2 mg mass, UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side protected MOSFET applications.

Compared with BTS716G and VNQ7050AJTR-E, the ZXMS6004N8-13 offers superior overvoltage clamping (60–70V) and simpler 2-wire control - making it optimal for cost-sensitive, non-diagnostic industrial switching where robustness against inductive transients is prioritized over telemetry.

Availability

ZXMS6004N8-13 is available at Aetrix Electronics and suitable for automotive lighting control, industrial motor starters, PLC output modules, and smart appliance power stages requiring stable component supply and long-term manufacturability.

Supply support for ZXMS6004N8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The IntelliFET® product line delivers rugged, self-protected power switches for industrial, automotive, and consumer applications where reliability under electrical stress and thermal overload is essential - eliminating discrete protection components and simplifying board-level design.

FAQ

What is the maximum safe continuous drain current at 70°C ambient temperature?

At T_A = 70°C, the ZXMS6004N8-13 supports 0.85A continuous drain current when mounted on a 1-inch² copper pad (R_θJA = 76°C/W). This is derived from its 1.65W P_D rating at 25°C and 12.4mW/°C linear derating - ensuring junction temperature remains below 150°C under sustained load.

Does the device require an external flyback diode when driving inductive loads?

No external flyback diode is required. The ZXMS6004N8-13 incorporates an active clamp circuit that limits V_DS to 60–70V during inductive turn-off, safely absorbing 120mJ of unclamped inductive energy - verified per EAS testing at V_DD = 24V, I_D = 0.5A.

Can the ZXMS6004N8-13 operate in linear (analog) mode for current regulation?

Yes - its current-limiting protection deactivates at low V_DS to avoid interfering with linear operation. The device can regulate current continuously, with maximum DC current determined solely by thermal limits of the PCB layout (e.g., 1.3A at 25°C ambient on recommended pad layout), not by internal trip thresholds.

Is the SO-8 package thermally enhanced, and how does it compare to standard SO-8?

Yes - pins 2, 3, 4, 5, 7, and 8 are internally bonded to the drain and serve as thermal conduction paths. Combined with the exposed drain paddle (visible in AP02002 outline), this configuration achieves R_θJC = 12°C/W - significantly lower than standard SO-8 MOSFETs - enabling higher power dissipation without heatsinking.