Diodes Incorporated ZXMS6008N8Q-13

Overview

ZXMS6008N8Q-13 from Diodes Incorporated is a 60V N-channel self-protected low-side IntelliFET® MOSFET with logic-level input, designed for rugged switching in harsh environments. It delivers 700mΩ R_DS(on), 1.1A nominal load current at 5V input, and integrated active clamp overvoltage protection (60V clamping), thermal shutdown, short-circuit auto-restart, and ESD protection. It serves as a drop-in replacement for standard MOSFETs in microcontroller-driven lamp, motor, relay, and solenoid drivers.

For engineers reviewing the ZXMS6008N8Q-13 datasheet, ZXMS6008N8Q-13 pinout, ZXMS6008N8Q-13 application, or ZXMS6008N8Q-13 equivalent, key selection criteria include its AEC-Q101 qualification, 210mJ unclamped inductive energy rating, SO-8 package thermal performance (R_θJA = 63.7°C/W with copper pad), and validated 3.3V/5V logic compatibility without external gate drivers.

Technical Context

The ZXMS6008N8Q-13 integrates protection circuitry directly into the die: overcurrent limiting triggers at 1.2A (typ.) with auto-restart, thermal shutdown activates at +150°C with +10°C hysteresis, and active clamp limits V_DS to 60–70V during inductive flyback. Its logic-level input accepts 0–5.5V, with VIH ≥3V and VIL ≤0.7V, enabling direct drive from 3.3V/5V µCs.

It operates as a single-chip protected switch: drain-source conduction path handles up to 0.9A continuous (5V, 25°C, enhanced PCB layout), while internal sensing monitors junction temperature, current, and voltage to enforce safe operating area boundaries-no external components required for basic fault protection.

Key Specifications

Pinout & Package

Package: SO-8 (3.9mm × 4.9mm × 1.45mm), lead-free, RoHS-compliant, halogen-free "Green" molding compound (UL 94V-0), matte tin terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected low-side switch applications.

Compared with BTS7008-1EPP and VNLD5090EP, the ZXMS6008N8Q-13 uniquely combines 60V clamping, 700mΩ R_DS(on), and AEC-Q101 qualification in SO-8-offering best-in-class protection integration for space-constrained 24V automotive and industrial switches.

Availability

ZXMS6008N8Q-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, and smart building relay modules requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for ZXMS6008N8Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

The ZXMS6008N8Q-13 belongs to Diodes' IntelliFET® family-engineered specifically for ruggedized low-side switching in harsh environments where fault tolerance, small footprint, and µC-direct drive are mandatory.

FAQ

What is the maximum continuous drain current for ZXMS6008N8Q-13 at 85°C ambient?

At T_A = 85°C with 1-inch² copper pad (R_θJA = 63.7°C/W), the device supports ~0.65A continuous drain current. This is derived from thermal limit: P_D = (T_J(max) − T_A) / R_θJA = (150 − 85) / 63.7 ≈ 1.02W; then I_D = √(P_D/R_DS(on)) ≈ √(1.02/0.7) ≈ 1.21A - but current limit circuitry caps it at 1.6A pulsed and ~0.65A sustained under thermal constraint.

Does ZXMS6008N8Q-13 require an external flyback diode when driving inductive loads?

No. The device incorporates active overvoltage clamping that limits V_DS to 60–70V during inductive flyback, absorbing up to 210mJ energy per pulse. External diodes are unnecessary for typical 24V solenoid or relay loads, though a TVS may be added for extreme transients beyond EAS rating.

Can ZXMS6008N8Q-13 be used in high-side switching configurations?

No. ZXMS6008N8Q-13 is a dedicated low-side N-channel switch with source tied to ground reference. Its internal protection circuitry and pinout (IN, D, S) are optimized for ground-referenced loads only. High-side operation would require P-channel or floating-gate driver architecture not supported by this device.

Is the SO-8 package thermally enhanced compared to standard SO-8?

Yes. While mechanically identical to JEDEC SO-8, the ZXMS6008N8Q-13 uses a high-thermal-conductivity "Green" mold compound and optimized die attach to achieve R_θJC = 11.3°C/W and R_θJA = 63.7°C/W with 1-inch² copper - 40% better than standard SO-8 MOSFETs (typically R_θJA > 100°C/W), enabling higher power density in compact layouts.