Diodes Incorporated ZXMS82090S14PQ-13

Overview

ZXMS82090S14PQ from Diodes Incorporated is a dual-channel high-side power switch in SO-14EP package, integrating n-channel vertical power MOSFETs with charge-pumped gate drive, temperature/current sensing, and diagnostic feedback. It operates from 5V–28V supply, delivers 3.5A nominal load current per channel, features 180mΩ R_DS(ON) at +150°C, and supports 3.3V/5V logic-level enable for automotive body electronics such as incandescent lamps (P21W), motors, and LEDs.

For engineers reviewing the ZXMS82090S14PQ datasheet, ZXMS82090S14PQ pinout, ZXMS82090S14PQ application, or ZXMS82090S14PQ equivalent, key selection criteria include dual-channel independent overload protection, proportional analog current-sense output (K_ILIS = 1500), open-load detection in ON/OFF states, and AEC-Q100 qualification for automotive systems requiring robust fault diagnostics and thermal resilience.

Technical Context

The device implements two independent high-side switches with monolithic n-channel vertical MOSFETs, each with dedicated INx inputs and shared diagnostic resources (IS, DEN, DSEL). Gate drive uses internal charge pump to sustain operation across full 5V–28V supply range without external boost circuitry.

Protection architecture includes dynamic overtemperature cycling (∆T_J(SW) = 80K), absolute thermal shutdown (T_J(SC) = +150°C to +200°C), voltage-dependent current limiting (IL5(SC) = 17A at V_DS = 5V), and active clamping for load-dump (VS(LD) = 41V) and inductive ring-off (V_DS(AZ) = 41–53V).

Key Specifications

Pinout & Package

SO-14EP (exposed pad) package with integrated heatsink for enhanced thermal performance (R_θJS = 4°C/W). Exposed pad (EP) connects to VS (battery positive) for low-inductance power routing and improved power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side power switch applications.

Compared with BTS716G and VND7140AJ, ZXMS82090S14PQ offers unique analog current-sense simplicity (no ADC calibration or SPI drivers needed), dual-channel independence without interlock constraints, and lower standby current (0.5µA vs. >5µA), making it optimal for always-on automotive modules with tight power budgets.

Availability

ZXMS82090S14PQ is available at Aetrix Electronics and suitable for automotive interior lighting, body control modules, engine bay power distribution, and commercial vehicle trailer control requiring stable component supply, AEC-Q100 compliance, and long-term production continuity.

Supply support for ZXMS82090S14PQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs for automotive, industrial, and consumer markets, with manufacturing certified to IATF 16949.

ZXMS82090S14PQ belongs to the IntelliFET® high-side switch product line, engineered specifically for automotive power distribution with integrated protection, diagnostics, and thermal resilience - eliminating discrete protection components and simplifying ECU design.

FAQ

What is the maximum allowable junction temperature and how is thermal protection implemented?

The ZXMS82090S14PQ features dual thermal protection: dynamic overtemperature cycling (∆T_J(SW) = 80K) that toggles output during rapid local heating, and absolute thermal shutdown at T_J(SC) = +150°C to +200°C. The device remains latched off until junction temperature falls by ∆T_J(SC) = 20K. Maximum rated junction temperature is +150°C for continuous operation per AEC-Q100 Grade 1.

Can both output channels be used simultaneously, and what are the derating considerations?

Yes, both channels operate independently and may be enabled simultaneously. When both are active, nominal load current derates to 2.5A per channel at T_amb = +85°C due to shared thermal mass. Total power dissipation must remain ≤1.9W (T_amb = +85°C), requiring appropriate PCB copper area and airflow per Diodes' recommended layout in DS45114 Rev. 4-2.

How does open-load detection work in OFF-state versus ON-state?

In ON-state, open-load is detected via near-zero IS output current (I_IS ≈ 0) when no load current flows. In OFF-state, the device monitors OUT voltage: if OUT remains near VS (indicating no ground path), it asserts I_IS(FAULT) on the IS pin. This dual-mode detection covers broken filaments (ON) and disconnected harnesses (OFF) without external circuitry.

Is external reverse-battery protection required, and what resistor values are recommended?

Reverse-battery protection requires external resistors: R_GND = 150Ω and R_INx = R_DEN = R_DSEL = 4.7kΩ. These limit fault current through ESD diodes during −16V reverse events, preventing latch-up while allowing functional recovery once polarity is restored. No additional TVS or MOSFETs are needed for basic compliance.