Diodes Incorporated ZXT10N50DE6TC

Overview

ZXT10N50DE6 from Diodes Incorporated is a 50V NPN low-saturation switching transistor in SOT26 package, rated for 3A continuous collector current and 6A peak pulse current, with R_CE(SAT) = 75 mΩ and V_CE(SAT) ≤ 200 mV at 1 A - optimized for high-efficiency DC-DC converter switches and automotive load switching.

For engineers reviewing the ZXT10N50DE6 datasheet, ZXT10N50DE6 pinout, ZXT10N50DE6 application, or ZXT10N50DE6 equivalent, key selection criteria include saturation voltage at 3A, thermal resistance (R_θJA = 113 °C/W), AEC-Q101 qualification, SOT26 footprint compatibility, and h_FE characterization up to 6A under pulsed conditions.

Technical Context

This NPN bipolar junction transistor features a rugged silicon die optimized for low V_CE(SAT) across 0.1–3 A, with h_FE maintained ≥100 at IC = 2 A and ≥40 at IC = 6 A. Its BV_CEO = 50 V and ESD HBM rating of 4 kV support robust operation in automotive power distribution nodes.

The device uses a thermally enhanced SOT26 leadframe with matte tin-plated terminals and meets J-STD-020 Level 1 moisture sensitivity. Thermal resistance from junction to ambient is 113 °C/W on 25 mm × 25 mm 1 oz copper PCB, enabling stable operation up to +150 °C junction temperature.

Key Specifications

Pinout & Package

Package: SOT26 - surface-mount, 6-pin plastic package with exposed collector tab for thermal relief; dimensions per AP02002 (3.00 × 2.80 × 1.10 mm); weight ≈ 0.015 g; UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with ZXT10N50DZTA and MJD127-TP, the ZXT10N50DE6 uniquely balances AEC-Q101 compliance, SOT26 miniaturization, and 3 A/50 V capability - making it optimal for space-constrained automotive modules where qualification and footprint are non-negotiable.

Availability

ZXT10N50DE6 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and LED lighting systems requiring stable component supply, AEC-Q101 reliability, and consistent SOT26 packaging.

Supply support for ZXT10N50DE6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The ZXT series targets high-reliability power switching applications, emphasizing low saturation voltage, automotive qualification, and thermally efficient packaging for next-generation vehicle electronics and industrial power systems.

FAQ

Is ZXT10N50DE6 suitable for linear regulator applications?

Yes - its V_CE(SAT) ≤ 200 mV at 1 A and h_FE ≥200 up to 1 A support stable operation in emitter-follower or series-pass configurations. However, thermal derating must be applied: maximum continuous power dissipation is 1.1 W at 25 °C ambient, decreasing by 8.8 mW/°C above that temperature.

What is the recommended base drive for switching at 3 A?

For full saturation at I_C = 3 A, the datasheet specifies I_B = 100 mA. A practical drive circuit uses a 10 Ω series resistor from a 3.3 V or 5 V logic source, delivering ~300–500 mA peak current to ensure fast turn-on and margin against h_FE variation across temperature and lot.

Does ZXT10N50DE6 have integrated ESD protection?

It features inherent junction-level ESD robustness: 4 kV HBM and 400 V MM ratings per JEDEC JESD22-A114/A115. No external TVS diode is required for board-level ESD immunity in typical automotive harness environments, though system-level testing per ISO 10605 remains mandatory.

Can ZXT10N50DE6 replace a MOSFET in a 12 V load switch?

Yes - especially where gate drive voltage is limited or cost reduction is prioritized. At 1 A, its 200 mV V_CE(SAT) yields lower conduction loss than many 12 V-rated logic-MOSFETs with R_DS(on) > 200 mΩ. Base drive current (~100 mA) is higher than MOSFET gate charge, but eliminates level-shifting and bootstrap complexity.