Diodes Incorporated ZXT13P12DE6TC
- Part No.:
- ZXT13P12DE6TC
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- SOT-23-6
- Datasheet:
-
ZXT13P12DE6TC.pdf
- Description:
- TRANS PNP 12V 4A SOT-23-6
- Quantity:
- Payment:

- Shipping:

Inventory:6,473
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Product details
Overview
ZXT13P12DE6 from Diodes Incorporated is a 12V PNP low-saturation switching transistor in SOT26 package, rated for -4A continuous collector current and -15A peak pulse current, with RCE(sat) = 37 mΩ and VCE(sat) ≤ -90 mV @ -1A. It serves as a high-current power switch in DC-DC converters and motor control circuits where low conduction loss and fast switching are required.
For engineers reviewing the ZXT13P12DE6 datasheet, ZXT13P12DE6 pinout, ZXT13P12DE6 application, or ZXT13P12DE6 equivalent, key selection criteria include verified BVCEO = -12 V, hFE ≥ 200 @ -4A, thermal resistance RθJA = 113 °C/W (on 25 mm × 25 mm 1 oz copper), ESD HBM rating of 4 kV, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This PNP bipolar junction transistor operates in saturation-switching mode with characterized hFE up to -15A, enabling stable gain hold-up under high-current load transients. Its low VCE(sat) (-7.5 mV typ. @ -100 mA) and tight RCE(sat) tolerance support efficient power path control in synchronous rectification and load switching topologies.
The device features fully lead-free, halogen- and antimony-free "Green" construction, qualified per AEC-Q101, and exhibits robust transient thermal impedance (≤18.6 °C/W junction-to-lead), making it suitable for thermally constrained automotive and industrial power management modules operating from -55°C to +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -12 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration |
| IC (cont.) | -4 A - Continuous collector current capability without derating at TA = 25°C on standard PCB |
| RCE(sat) | 37 mΩ - Equivalent on-resistance determining conduction loss in saturated switching applications |
| VCE(sat) | -90 mV max @ -1A - Low saturation voltage enabling <0.1 W dissipation at 1A, critical for thermal efficiency |
| fT | 55 MHz - Current gain-bandwidth product indicating usable frequency limit for small-signal amplification |
| ESD HBM | 4,000 V - Human Body Model rating confirming robustness against handling-induced electrostatic discharge |
| TJ range | -55°C to +150°C - Operating junction temperature span supporting under-hood automotive and industrial environments |
Pinout & Package
Package: SOT26 - Surface-mount, 6-pin plastic package with exposed collector pad for enhanced thermal performance; dimensions per AP02002 (3.00 mm × 2.80 mm × 1.10 mm); moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emitter terminal | Current sink node; connected to higher potential rail in PNP high-side switch configurations |
| 2 (Base) | Control input | Drives transistor into saturation with -500 mA max base current; requires current-limiting resistor in driver stage |
| 3 (Collector) | Main current path output | Connected to load; electrically tied to exposed pad for thermal conduction to PCB copper |
| 4 (Collector) | Collector terminal (dual-pin) | Second collector connection providing parallel current path and reduced thermal resistance |
| 5 (Base) | Base terminal (dual-pin) | Redundant base connection improving drive reliability and reducing bond wire inductance |
| 6 (Emitter) | Emitter terminal (dual-pin) | Redundant emitter connection enhancing current sharing and thermal distribution |
Key Features
| Feature | Design Value |
|---|---|
| Low saturation voltage | VCE(sat) ≤ -90 mV @ -1A enables <0.1 W conduction loss, reducing heatsink requirements in compact power stages |
| High current gain at full load | hFE ≥ 200 @ -4A ensures reliable saturation with modest base drive, simplifying gate driver design |
| AEC-Q101 qualification | Validated for automotive applications including engine control and body electronics requiring zero-defect reliability |
| Dual collector and emitter pins | Reduces effective package resistance and thermal impedance by distributing current across multiple bond wires and leads |
| Green compound packaging | Halogen- and antimony-free molding compound meets strict environmental compliance (Br+Cl <1500 ppm, Sb <1000 ppm) |
Applications
| DC-DC Converters | Power Management Functions |
|---|---|
Use Scenario: Used as synchronous rectifier or main switch in non-isolated buck converters delivering up to 5 A output. IC Role / Device Role / Timing Role: PNP switching transistor performing high-efficiency power path control during PWM on-phase. Use Value: 37 mΩ RCE(sat) reduces conduction loss by >30% versus comparable discrete PNP devices, improving converter efficiency at 1–3 A loads. | Use Scenario: Implements overcurrent protection and load switching in battery-powered industrial controllers. IC Role / Device Role / Timing Role: High-current PNP switch enabling/disabling 12 V auxiliary rails with fast turn-on (<70 ns) and turn-off (<265 ns). Use Value: -15 A peak pulse rating supports surge immunity during hot-plug events, eliminating need for external current limiting circuitry. |
| Power Switches | Motor Control |
Use Scenario: Serves as high-side switch in programmable LED driver modules driving 4 A constant-current strings. IC Role / Device Role / Timing Role: Low-VCE(sat) PNP transistor regulating current through series-connected LEDs. Use Value: -90 mV VCE(sat) at -1A minimizes forward voltage overhead, increasing available headroom for LED string length and dimming resolution. | Use Scenario: Controls brushed DC motor direction and braking in automotive seat/mirror actuators. IC Role / Device Role / Timing Role: PNP switch in H-bridge half-bridge leg managing bidirectional current flow and regenerative braking paths. Use Value: AEC-Q101 qualification and -55°C to +150°C operation ensure functional safety and longevity in under-dash environments subject to thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXT13P20DE6 | BVCEO = -20 V (vs. -12 V); same SOT26 package, -4 A IC, but higher VCE(sat) (-120 mV @ -1A) | Better suited for 24 V systems requiring higher breakdown margin; less optimal for 12 V rails due to increased conduction loss | Select when system VCC exceeds 15 V and higher voltage margin is prioritized over minimal saturation loss |
| DMT3005LPSQ-13 | PNP MOSFET (not BJT); RDS(on) = 45 mΩ @ VGS = -4.5 V; no base current required, but slower switching (ton/toff > 100 ns) | Eliminates base drive complexity but lacks hFE-based current gain; unsuitable for analog current regulation | Prefer for digital on/off switching where gate drive simplicity outweighs need for linear gain or fast edge rates |
Compared with ZXT13P20DE6 and DMT3005LPSQ-13, ZXT13P12DE6 delivers the lowest VCE(sat) in 12 V systems while retaining high-current hFE linearity-making it optimal for precision current-controlled switching where thermal efficiency and analog feedback stability are critical.
Availability
ZXT13P12DE6 is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and automotive power switches requiring stable component supply, AEC-Q101 compliance, and consistent low-saturation performance across production batches.
Supply support for ZXT13P12DE6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
ZXT13P12DE6 belongs to Diodes' ZXT series of high-current PNP transistors engineered specifically for low-loss switching in space-constrained 12 V power systems-including automotive body electronics, industrial PLC I/O modules, and portable equipment power rails.
FAQ
What is the maximum allowable base current for continuous operation?
The absolute maximum base current is -500 mA per the datasheet's Absolute Maximum Ratings table. For continuous operation, base current must be limited to ensure junction temperature remains within -55°C to +150°C limits; typical design practice uses IB ≤ -400 mA at IC = -4 A to maintain saturation while avoiding thermal runaway.
Can ZXT13P12DE6 replace an NPN transistor in the same circuit?
No-ZXT13P12DE6 is a PNP transistor with opposite polarity and complementary biasing requirements. Replacing an NPN device would require inverting the drive logic, reversing supply connections, and recalculating base resistor values; it is not a drop-in substitute and may cause circuit malfunction or damage if used without topology redesign.
Is the SOT26 package thermally enhanced compared to standard SOT23?
Yes-the SOT26 package features dual collector and emitter pins plus an exposed collector pad that connects directly to PCB copper, achieving RθJA = 113 °C/W (vs. ~200 °C/W for standard SOT23). This allows 1.7× higher power dissipation at the same ambient temperature, confirmed by Diodes' AP02002 thermal characterization data.
Does ZXT13P12DE6 support pulsed operation beyond its continuous ratings?
Yes-it is rated for -15 A peak pulse current (ICM) with pulse width ≤ 300 μs and duty cycle ≤ 2%, as validated in the Electrical Characteristics table (Note 9). This enables short-duration surge handling in motor stall protection and inrush limiting, provided thermal mass and PCB layout prevent cumulative junction heating.
ZXT13P12DE6TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 12 V
- Vce Saturation (Max) @ Ib, Ic:
- 175mV @ 400mA, 4A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 300 @ 1A, 2V
- Power - Max:
- 1.1 W
- Frequency - Transition:
- 55MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-6
ZXT13P12DE6TC FAQ
1.How can I place an order for ZXT13P12DE6TC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXT13P12DE6TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXT13P12DE6TC reliable?
The price and inventory of ZXT13P12DE6TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXT13P12DE6TC is usually 5 days.
3.What payment methods are accepted for ZXT13P12DE6TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXT13P12DE6TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXT13P12DE6TC?
ZXT13P12DE6TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXT13P12DE6TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXT13P12DE6TC?
For technical support, including ZXT13P12DE6TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXT13P12DE6TC requirements.
6.How does Aetrix verify that ZXT13P12DE6TC is sourced from the original manufacturer or authorized distributors?
All ZXT13P12DE6TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXT13P12DE6TC meets industry standards.
7.What is the process for return or replacement of ZXT13P12DE6TC?
All ZXT13P12DE6TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXT13P12DE6TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXT13P12DE6TC part is unused and in its original packaging.
Return procedure for ZXT13P12DE6TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ZXT13P12DE6TC Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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