Diodes Incorporated ZXTN07045EFFTA

Overview

ZXTN07045EFFTA from Diodes Incorporated is a 45V NPN low-saturation transistor optimized for high-current switching in power management circuits, delivering V_CE(sat) < 80 mV at 1 A, R_CE(sat) = 50 mΩ, and h_FE ≥ 400 at 1 A. It serves as a high-gain, low-loss switch in gate drivers, motor control, and boost converters.

For engineers reviewing the ZXTN07045EFFTA datasheet, ZXTN07045EFFTA pinout, ZXTN07045EFFTA application, or ZXTN07045EFFTA equivalent, key selection criteria include its 4 A continuous collector current, AEC-Q101 qualification, SOT23F thermal performance (R_θJA = 60 °C/W on 50 mm × 50 mm 2 oz Cu), and complementary PNP pairing with ZXTP07040DFF.

Technical Context

This NPN bipolar junction transistor uses epitaxial planar die construction to achieve stable h_FE characterization up to 4 A and low saturation voltage via optimized base doping and emitter geometry. Its BV_CEO = 45 V and V_EBO = 7 V support robust operation in 24–48 V industrial power rails.

The SOT23F package integrates an exposed collector pad for enhanced thermal conduction, enabling 1.5 W dissipation with linear derating down to zero at +150 °C. ESD ratings meet 4 kV HBM (JEDEC Class 3A) and 400 V MM, supporting reliable handling in automated assembly.

Key Specifications

Pinout & Package

Package: SOT23F - surface-mount, lead-free, green molded plastic case with exposed collector pad; 0.012 g mass; UL 94V-0 rated; moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-saturation transistor applications.

Compared with ZXTN2012E6TA and DMT3006LPSQ-13, ZXTN07045EFFTA uniquely balances 45 V breakdown, 4 A current, and sub-80 mV saturation in a thermally enhanced SOT23F-making it optimal for AEC-Q101-compliant 24–48 V industrial switching where BJT drive simplicity and thermal density are prioritized.

Availability

ZXTN07045EFFTA is available at Aetrix Electronics and suitable for boost converters, MOSFET gate drivers, and lamp/relay drivers requiring stable component supply, automotive-grade reliability, and high-power-density packaging.

Supply support for ZXTN07045EFFTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

ZXTN07045EFFTA belongs to Diodes' AEC-Q101-qualified low-saturation BJT product line, engineered specifically for high-current, thermally constrained switching in automotive body electronics and industrial power interfaces.

FAQ

What is the maximum allowable junction temperature for ZXTN07045EFFTA?

The absolute maximum operating junction temperature is +150 °C, with storage temperature matching this range. Derating begins at +25 °C ambient, and full 1.5 W dissipation is only achievable below +75 °C ambient on a 50 mm × 50 mm 2 oz Cu PCB per datasheet Note 8.

Is ZXTN07045EFFTA pin-compatible with standard SOT23 packages?

No-it uses the SOT23F footprint, which shares the same pad layout as industry-standard SOT23 but features a lower profile and an exposed collector pad. PCB land patterns must follow Diodes' recommended SOT23F pad layout (not generic SOT23) to ensure thermal and mechanical reliability.

How does the h_FE behavior change at elevated temperatures?

h_FE increases with temperature: typical gain rises ~20 % from –55 °C to +100 °C at I_C = 1 A, then declines above +100 °C. The minimum guaranteed h_FE of 400 @ 1 A holds across the full –55 °C to +150 °C operating range per datasheet specifications.

Can ZXTN07045EFFTA replace a MOSFET in gate-driving applications?

Yes-as a current-driven switch, it delivers fast, high-peak-current gate drive (up to 6 A pulsed) with predictable V_CE(sat) and no Miller plateau. However, unlike MOSFETs, it requires sustained base current and exhibits slower turn-off due to minority-carrier storage; use only where BJT timing characteristics align with controller requirements.