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Diodes Incorporated ZXTN19020DFFTA

Part No.:
ZXTN19020DFFTA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
SOT-23-3 Flat Leads
Datasheet:
AetrixZXTN19020DFFTA.pdf
Description:
TRANS NPN 20V 6.5A SOT-23F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,833

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Product details

Overview

ZXTN19020DFFTA from Diodes Incorporated is a 20V NPN high-gain power transistor in SOT23F package, rated for 6.5A continuous collector current, with VCE(sat) < 30mV at 1A and RCE(sat) = 18mΩ. It delivers hFE ≥ 260 at 2A and 1.5W power dissipation, designed for high-density gate driving and LED strobe applications.

For engineers reviewing the ZXTN19020DFFTA datasheet, ZXTN19020DFFTA pinout, ZXTN19020DFFTA application, or ZXTN19020DFFTA equivalent, key selection criteria include low saturation voltage under high-current switching, AEC-Q101 qualification for automotive reliability, thermal performance on varying copper areas, and complementary PNP pairing with ZXTP19020DFF.

Technical Context

This NPN bipolar junction transistor employs advanced process technology to achieve high forward current gain and ultra-low saturation resistance. Its 70V VCBO/VCEX rating supports robust forward-blocking operation, while VCEO = 20V defines its safe linear switching envelope.

The device operates across –55°C to +150°C and exhibits ESD HBM rating of 4kV. Thermal resistance varies from 60°C/W (50mm×50mm 2oz Cu) to 149°C/W (15mm×15mm 1oz Cu), enabling precise thermal design based on PCB layout constraints.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 20V - Maximum allowable collector-emitter voltage in normal forward-active/switching mode
IC (continuous) 6.5A - Sustained load current capability without derating at TA = 25°C on 50mm×50mm 2oz Cu
VCE(sat) @ 1A <30mV - Enables sub-30mW conduction loss per switch at 1A, critical for efficiency in gate drivers
hFE min @ 2A 260 - Ensures stable base drive margin and predictable current amplification in high-current buffers
RCE(sat) 18mΩ - Directly determines on-state power loss (P = I²R); enables compact thermal design
TJ range –55°C to +150°C - Supports operation in under-hood automotive and industrial motor control environments
AEC-Q101 qualified Yes - Validated for automotive-grade reliability including temperature cycling, HTOL, and ESD stress

Pinout & Package

Package: SOT23F - Low-profile surface-mount plastic package with exposed collector pad; compatible with standard SOT23 footprint but optimized for higher power density and improved thermal transfer via the collector lead.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) E Current return path; connected to ground or low-side reference in common-emitter configurations
2 (Base) B Control input; requires ~180mA base drive for full 6.5A saturation, enabling direct MCU GPIO or logic-level driver interface
3 (Collector) C High-current output node; electrically and thermally tied to exposed pad for enhanced heat dissipation and reduced thermal impedance

Key Features

Feature Design Value
Ultra-low VCE(sat) <30mV @ 1A - Reduces conduction loss by >50% vs. standard small-signal transistors, improving system efficiency in pulsed loads
High hFE stability Min 260 @ 2A - Maintains strong current gain under high-current conditions, minimizing base drive circuit complexity
SOT23F thermal enhancement RθJL = 43.77°C/W - Junction-to-lead thermal path enables effective heat transfer to PCB copper, supporting 1.5W dissipation in space-constrained layouts
AEC-Q101 qualification Qualified per stress test requirements - Validates suitability for automotive body electronics, lighting, and engine control modules
Complementary PNP pair ZXTP19020DFF - Enables matched push-pull or H-bridge topologies with symmetrical saturation and gain characteristics

Applications

MOSFET/IGBT Gate Driver LED Strobe Flash

Use Scenario: Driving the gate of a 40V/30A MOSFET in an automotive window lift controller with 20kHz PWM.

IC Role / Device Role / Timing Role: High-current NPN switch providing fast turn-on current surge (>1A peak) and low-loss hold current.

Use Value: VCE(sat) <30mV at 1A limits driver-stage conduction loss to <30mW, reducing thermal load on PCB and enabling smaller heatsinking.

Use Scenario: Delivering 5A pulsed current to a high-brightness white LED array in camera flash modules.

IC Role / Device Role / Timing Role: Fast-switching current source with sub-100ns rise/fall times and minimal storage time (ts = 398ns).

Use Value: Low VCE(sat) and high hFE ensure >95% current delivery efficiency during 10–100ms flash pulses, maximizing light output per joule.

Motor Drive (Small DC) Micro Buffer Amplifier

Use Scenario: Half-bridge low-side switch controlling a 12V, 3A brushed DC motor in HVAC damper actuation.

IC Role / Device Role / Timing Role: Robust current sink handling repetitive 6.5A stall currents with thermal protection via PCB copper area.

Use Value: RCE(sat) = 18mΩ limits worst-case stall power to 765mW, allowing reliable operation on 25mm×25mm 2oz Cu without forced air.

Use Scenario: Level-shifting and current-boosting stage between a 3.3V microcontroller and a 5V logic input requiring 20mA.

IC Role / Device Role / Timing Role: High-gain (hFE ≥ 420 @ 0.1A) emitter-follower buffer with fast switching for digital signal conditioning.

Use Value: High hFE and low VBE(sat) (940mV @ 6.5A) ensure clean logic transitions and minimal propagation delay in timing-critical interfaces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT3005LPSQ-13 60V VCEO, 5A IC, SOT23-3 package, RDS(on) = 30mΩ (MOSFET) Lower max current, higher voltage rating; MOSFET offers zero gate current but higher VGS(th) sensitivity Prefer when gate drive is high-impedance or voltage-controlled switching is required over current amplification
ZXTN2012E6TA 20V VCEO, 4A IC, SOT23 package (non-F), hFE min = 200 @ 2A, VCE(sat) = 45mV @ 1A Lower current rating, higher saturation voltage, no AEC-Q101 qualification Select only for cost-sensitive non-automotive applications where 6.5A and <30mV VCE(sat) are not required

Compared with DMT3005LPSQ-13 and ZXTN2012E6TA, ZXTN19020DFFTA uniquely combines AEC-Q101 qualification, 6.5A current capability, and sub-30mV saturation in a thermally enhanced SOT23F - making it optimal for automotive gate drivers and high-reliability strobe circuits where bipolar drive strength and thermal headroom are critical.

Availability

ZXTN19020DFFTA is available at Aetrix Electronics and suitable for MOSFET gate drivers, LED strobe flash systems, and automotive motor control applications requiring stable component supply, AEC-Q101 compliance, and high-current switching performance.

Supply support for ZXTN19020DFFTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

ZXTN19020DFFTA belongs to Diodes' high-gain power transistor product line, engineered for high-density switching applications demanding low saturation voltage, robust thermal performance, and automotive-grade qualification.

FAQ

What is the maximum continuous collector current for ZXTN19020DFFTA, and under what thermal conditions is it specified?

The maximum continuous collector current is 6.5A, specified at TA = +25°C when mounted on a 50mm × 50mm PCB area with 2oz copper. Derating applies above 25°C ambient: 12.0 mW/°C for this configuration, dropping usable current to ~4.5A at 85°C ambient.

How does the SOT23F package differ from standard SOT23 in thermal performance?

SOT23F features an exposed collector pad that reduces thermal resistance to 60°C/W (junction-to-ambient) on 50mm×50mm 2oz copper-versus ~100°C/W for standard SOT23. This allows 1.5W dissipation versus ~0.8W in equivalent layouts, enabling higher current operation without added heatsinking.

Is ZXTN19020DFFTA suitable for reverse-biased emitter-collector operation?

No. The emitter-collector breakdown voltage (VECO) is only 4.5V, and reverse blocking is limited to 6V (VECX). Using it in reverse-emitter configurations risks premature breakdown; it is strictly intended for forward-active and saturation-mode operation with collector positive relative to emitter.

What base drive current is required to fully saturate ZXTN19020DFFTA at 6.5A collector current?

Full saturation at IC = 6.5A requires IB = 180mA, yielding an overdrive ratio of ~36 (since hFE ≥ 260). VBE(sat) is 940mV under this condition, confirming compatibility with 3.3V or 5V logic drivers capable of sourcing ≥180mA peak current.

ZXTN19020DFFTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-3 Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
6.5 A
Voltage - Collector Emitter Breakdown (Max):
20 V
Vce Saturation (Max) @ Ib, Ic:
190mV @ 180mA, 6.5A
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 100mA, 2V
Power - Max:
1.5 W
Frequency - Transition:
160MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23F

ZXTN19020DFFTA FAQ

1.How can I place an order for ZXTN19020DFFTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTN19020DFFTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTN19020DFFTA reliable?

The price and inventory of ZXTN19020DFFTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN19020DFFTA is usually 5 days.

3.What payment methods are accepted for ZXTN19020DFFTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN19020DFFTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTN19020DFFTA?

ZXTN19020DFFTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTN19020DFFTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTN19020DFFTA?

For technical support, including ZXTN19020DFFTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN19020DFFTA requirements.

6.How does Aetrix verify that ZXTN19020DFFTA is sourced from the original manufacturer or authorized distributors?

All ZXTN19020DFFTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN19020DFFTA meets industry standards.

7.What is the process for return or replacement of ZXTN19020DFFTA?

All ZXTN19020DFFTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN19020DFFTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTN19020DFFTA part is unused and in its original packaging.

Return procedure for ZXTN19020DFFTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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