Diodes Incorporated ZXTN19060CFFTA

Overview

ZXTN19060CFFTA from Diodes Incorporated is a 60V NPN high-gain power transistor in SOT23F package, rated for 5.5A continuous collector current, 1.5W power dissipation, and V_CE(SAT) < 45mV at 1A. It delivers low R_CE(SAT) of 26mΩ and is AEC-Q101 qualified for automotive-grade reliability in high-side switching and motor drive applications.

For engineers reviewing the ZXTN19060CFFTA datasheet, ZXTN19060CFFTA pinout, ZXTN19060CFFTA application, or ZXTN19060CFFTA equivalent, key selection criteria include its 160V V_CEX blocking capability, h_FE characterized up to 6A, thermal resistance of 60°C/W on 50mm × 50mm 2oz copper, and complementary PNP pairing with ZXTP19060CFF.

Technical Context

This NPN bipolar junction transistor uses an advanced process to maximize gain and saturation performance under high-current, high-voltage switching conditions. Its V_CEO = 60V and V_CEX = 160V support robust forward- and reverse-blocking operation in line-switching and SLIC circuits.

The SOT23F package integrates an exposed collector pad for enhanced thermal conduction, enabling 1.5W dissipation with R_θJL = 43.8°C/W to lead and R_θJA as low as 60°C/W on optimized PCB layouts - critical for space-constrained power-density designs.

Key Specifications

Pinout & Package

SOT23F is a surface-mount, low-profile variant of SOT23 with an exposed collector pad for improved thermal performance. It maintains pin compatibility with standard SOT23 footprints while offering higher power density and lower R_θJA.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with ZXTP19060CFF, ZXTN19060CFF provides matched complementary switching with identical thermal and mechanical specs; versus MJD127G, it trades raw current headroom for 30× smaller footprint and 33× lower V_CE(SAT), making it optimal for high-density, efficiency-critical designs.

Availability

ZXTN19060CFFTA is available at Aetrix Electronics and suitable for line switching, DC fan motor driving, and high-side switching applications requiring stable component supply, AEC-Q101 compliance, and SOT23F footprint consistency.

Supply support for ZXTN19060CFFTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

ZXTN19060CFFTA belongs to Diodes' high-voltage, high-current bipolar transistor product line, engineered for automotive and industrial switching applications demanding AEC-Q101 qualification, low saturation loss, and compact thermal packaging.

FAQ

What is the maximum allowable base current for ZXTN19060CFFTA?

The absolute maximum base current is 1A, as specified in the Absolute Maximum Ratings table. However, for reliable operation at I_C = 5.5A, the recommended base drive is 550mA (I_C/I_B = 10), ensuring deep saturation while avoiding excessive base power dissipation or localized heating at the bond wire.

Can ZXTN19060CFFTA be used in high-frequency switching above 1MHz?

No - although f_T is 130MHz, the device's stored charge parameters (t_S = 682ns, t_F = 90.9ns) and lack of optimized RF structure make it unsuitable for >500kHz hard-switching. It is designed for medium-speed power switching (e.g., PWM motor control, line frequency switching), not RF or resonant converters.

How does the SOT23F package improve thermal performance over standard SOT23?

SOT23F incorporates an exposed collector pad that directly contacts the PCB copper, reducing R_θJA from ~149°C/W (standard SOT23, 15mm × 15mm 1oz Cu) to 60°C/W (SOT23F, 50mm × 50mm 2oz Cu). This 58% reduction in thermal resistance allows 1.5W dissipation - double the typical SOT23 limit - without external heatsinking.

Is ZXTN19060CFFTA suitable for reverse-biased emitter-base operation?

Yes - BVECO = 6V and BVEBO = 7V are explicitly rated, confirming safe reverse-bias operation of the emitter-base junction. This enables use in certain SLIC and bidirectional current-sensing configurations where the transistor may experience reverse V_EB during normal operation.