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Diodes Incorporated ZXTN2005GTA

Part No.:
ZXTN2005GTA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixZXTN2005GTA.pdf
Description:
TRANS NPN 25V 7A SOT-223-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,356

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Product details

Overview

ZXTN2005GTA from Diodes Incorporated is a 25V NPN low-saturation transistor in SOT223 package, designed for high-current switching in power electronics. It delivers 7A continuous collector current, 20A peak pulse current, and VCE(sat) ≤ 50mV at 1A-enabling efficient operation in DC-DC converters and MOSFET gate drivers.

For engineers reviewing the ZXTN2005GTA datasheet, ZXTN2005GTA pinout, ZXTN2005GTA application, or ZXTN2005GTA equivalent, key selection criteria include its 30mΩ RCE(sat) at 6.5A, hFE specified up to 20A, JEDEC-qualified reliability, and AEC-Q101 readiness for automotive-grade variants.

Technical Context

This NPN bipolar junction transistor operates with a minimum BVCEO of 25V and supports linear and switching modes up to 150°C junction temperature. Its low RCE(sat) (30mΩ @ 6.5A) and high hFE (≥200 @ 7A, ≥40 @ 20A) enable stable gain hold-up under heavy load transients.

Thermal performance is defined by RθJA = 42°C/W (52mm × 52mm 2oz Cu PCB) and RθJL = 8.8°C/W, supporting robust thermal management in compact power stages. ESD ratings meet HBM 4kV and MM 400V per JEDEC JESD22-A114/A115.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 25 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
IC (continuous) 7 A - Sustained current-handling capability without thermal derating on standard PCB layout.
VCE(sat) max 50 mV @ 1A - Enables <100mW conduction loss per device at 1A, critical for high-efficiency switching.
RCE(sat) 30 mΩ @ 6.5A - Equivalent on-resistance metric enabling direct comparison with MOSFETs in low-voltage switches.
hFE 40 min @ 20A - Confirmed current gain at full-rated peak current, ensuring reliable drive margin in gate driver applications.
fT 150 MHz - Supports fast switching in PWM frequencies up to several MHz with minimal phase lag.
PD 3.0 W - Maximum steady-state power dissipation at 25°C ambient with recommended copper layout.

Pinout & Package

Package: SOT223 - surface-mount, 4-pin thermally enhanced plastic package with exposed collector tab (Pin 3) for low thermal resistance (RθJL = 8.8°C/W).

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Emitter) Emission terminal for majority carriers Low-impedance return path; connected to ground or low-side reference in switch configurations.
Pin 2 (Base) Control input for minority carrier injection Requires ~150mA drive at 6.5A IC; compatible with standard logic-level or dedicated BJT drivers.
Pin 3 (Collector) Current collection node Exposed metal tab - must be soldered to large copper pour for thermal and electrical integrity.
Pin 4 (Collector) Second collector connection Redundant collector terminal; electrically tied to Pin 3 internally - improves current sharing and thermal spreading.

Key Features

Feature Design Value
Low saturation voltage VCE(sat) ≤ 50mV @ 1A reduces conduction losses below 50mW, improving efficiency in battery-powered systems.
High-current gain stability hFE ≥ 40 @ 20A ensures predictable base drive requirements even during short-circuit or motor stall conditions.
Thermally optimized package SOT223 with dual-collector pins and exposed tab achieves RθJL = 8.8°C/W - enables >2× power handling vs. standard SOT-23.
JEDEC-qualified reliability Qualified to AEC-Q101 stress test standards and rated for -55°C to +150°C operation - suitable for under-hood automotive modules.

Applications

DC-DC Converters MOSFET Gate Drivers

Use Scenario: High-efficiency synchronous buck converter output stage in industrial power supplies.

IC Role / Device Role / Timing Role: Low-side NPN switch controlling energy transfer into output inductor; driven by PWM controller.

Use Value: 30mΩ RCE(sat) minimizes I²R loss at 6.5A, maintaining >94% efficiency at 12V input/5V output.

Use Scenario: Active pull-down stage in half-bridge gate driver ICs for motor control inverters.

IC Role / Device Role / Timing Role: Fast-turn-off switch clamping MOSFET gate to ground during dead-time intervals.

Use Value: 464ns toff ensures clean gate discharge, preventing shoot-through in 20kHz+ PWM systems.

Charging Circuits Motor Control

Use Scenario: Constant-current regulation in USB PD 3.0 compliant portable charger modules.

IC Role / Device Role / Timing Role: Series pass transistor in linear charging path, controlled via analog feedback loop.

Use Value: VCE(sat) ≤ 35mV @ 1A limits dropout voltage to <50mV, preserving headroom for 5V rail operation.

Use Scenario: H-bridge low-side switch in 24V BLDC fan controllers for HVAC systems.

IC Role / Device Role / Timing Role: High-current commutation switch sinking up to 7A continuous motor phase current.

Use Value: 7A IC rating and 150MHz fT support precise PWM timing at 20kHz with minimal distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-saturation transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ZXTN2010GTA Higher VCEO (30V), lower hFE (min 25 @ 20A), same SOT223 package Better suited for 24V nominal systems requiring higher breakdown margin Select when system bus voltage exceeds 22V and gain margin at peak current is less critical
MJD122G TO-252 package, VCEO = 100V, IC = 8A, but VCE(sat) = 1.2V @ 3A - significantly higher conduction loss Used in legacy industrial controls where board space is unconstrained and thermal mass is high Choose only if footprint compatibility with TO-252 is mandatory and efficiency is secondary to cost

Compared with ZXTN2010GTA and MJD122G, the ZXTN2005GTA offers optimal balance of low VCE(sat), high hFE at full current, and SOT223 thermal performance - making it preferred for space-constrained, high-efficiency 12–24V power stages.

Availability

ZXTN2005GTA is available at Aetrix Electronics and suitable for DC-DC converters, MOSFET gate drivers, and motor control applications requiring stable component supply across automotive, industrial, and consumer electronics programs.

Supply support for ZXTN2005GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The ZXTN series targets high-reliability power switching applications, emphasizing low saturation, thermal robustness, and automotive qualification readiness - specifically engineered for next-generation power conversion and motor drive systems.

FAQ

Is ZXTN2005GTA qualified for automotive applications?

No - the ZXTN2005GTA is not AEC-Q101 qualified. However, Diodes offers the automotive-grade ZXTN2005GQTA variant, which undergoes full AEC-Q101 stress testing, PPAP documentation, and is manufactured in IATF 16949-certified facilities. The "Q" suffix denotes automotive qualification.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across –55°C to +150°C. Derating begins at +25°C ambient: power dissipation drops linearly at 24mW/°C for 52mm × 52mm 2oz Cu layouts, reaching zero at ~150°C case temperature.

Can ZXTN2005GTA replace a MOSFET in low-side switching applications?

Yes - with appropriate base drive design. Its 30mΩ RCE(sat) at 6.5A matches many small-signal MOSFETs, and its 464ns toff supports PWM frequencies up to 200kHz. Unlike MOSFETs, it requires sustained base current (~150mA), so driver stage power consumption must be accounted for.

Does ZXTN2005GTA have integrated ESD protection?

Yes - it meets JEDEC JESD22-A114 (HBM) with 4,000V rating and JESD22-A115 (MM) with 400V rating. This level of on-chip ESD protection allows direct handling in standard assembly environments without additional external TVS devices for board-level ESD immunity.

ZXTN2005GTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
7 A
Voltage - Collector Emitter Breakdown (Max):
25 V
Vce Saturation (Max) @ Ib, Ic:
230mV @ 150mA, 6.5A
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1A, 1V
Power - Max:
3 W
Frequency - Transition:
150MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3

ZXTN2005GTA FAQ

1.How can I place an order for ZXTN2005GTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTN2005GTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTN2005GTA reliable?

The price and inventory of ZXTN2005GTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN2005GTA is usually 5 days.

3.What payment methods are accepted for ZXTN2005GTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN2005GTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTN2005GTA?

ZXTN2005GTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTN2005GTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTN2005GTA?

For technical support, including ZXTN2005GTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN2005GTA requirements.

6.How does Aetrix verify that ZXTN2005GTA is sourced from the original manufacturer or authorized distributors?

All ZXTN2005GTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN2005GTA meets industry standards.

7.What is the process for return or replacement of ZXTN2005GTA?

All ZXTN2005GTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN2005GTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTN2005GTA part is unused and in its original packaging.

Return procedure for ZXTN2005GTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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