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Diodes Incorporated ZXTN2007GTA

Part No.:
ZXTN2007GTA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixZXTN2007GTA.pdf
Description:
TRANS NPN 30V 7A SOT-223-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,757

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Product details

Overview

ZXTN2007GTA from Diodes Incorporated is a 30V NPN medium-power low-saturation transistor in SOT223 package, rated for 7A continuous collector current and 20A peak pulse current, with VCE(SAT) ≤ 50mV at 1A and RSAT = 28mΩ at 6.5A - optimized for high-efficiency switching in DC-DC converters and MOSFET gate drivers.

For engineers reviewing the ZXTN2007GTA datasheet, ZXTN2007GTA pinout, ZXTN2007GTA application, or ZXTN2007GTA equivalent, key selection criteria include verified low on-resistance at high current, AEC-Q101 qualification for automotive-grade reliability, and thermal resistance (RθJA = 42°C/W on 52mm × 52mm 2oz copper) for sustained power-switching duty.

Technical Context

This NPN bipolar junction transistor operates as a saturated switch in medium-power linear and switching applications. Its design emphasizes low VCE(SAT) across wide current range (up to 20A), high hFE ≥ 100 at 20A, and robust safe operating area (SOA) up to 30V/7A DC.

It features a rugged SOT223 thermally enhanced plastic package with exposed collector tab, enabling direct PCB copper heatsinking. Thermal performance is specified under two mounting conditions: RθJA = 42°C/W (52mm × 52mm 2oz Cu) and 78°C/W (25mm × 25mm 1oz Cu), supporting flexible layout-dependent thermal management.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 30 V - Maximum blocking voltage in common-emitter configuration; defines upper limit for DC-DC converter input or motor drive rail voltage.
IC (continuous) 7 A - Sustained collector current capability; enables use in 5–10W power stages without forced air cooling.
VCE(SAT) @ 1A < 50 mV - Low conduction loss at moderate load; reduces power dissipation to <50 mW at 1A, improving efficiency.
RSAT @ 6.5A 28 mΩ - Equivalent on-resistance derived from VCE(SAT)/IC; supports high-current gate driving with minimal voltage droop.
hFE @ 20A ≥ 30 - Minimum DC current gain at peak pulse current; ensures reliable base drive margin for fast turn-on in switching circuits.
fT 140 MHz - Transition frequency; confirms suitability for high-speed switching up to ~10–20 MHz with adequate gain margin.
ESD HBM 4000 V - Human Body Model rating; provides robustness against handling ESD during assembly and board-level integration.

Pinout & Package

Package: SOT223 - surface-mount, thermally enhanced plastic case with exposed collector tab (pin 3) for direct PCB copper heatsinking; moisture sensitivity level 1 per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Emitter) Emitter terminal Reference node for base drive; connected to ground or low-side return path in switching topologies.
Pin 2 (Base) Control input Receives current-limited drive signal; requires IB = 100mA for full saturation at IC = 1A (IC/IB = 10).
Pin 3 (Collector) Power output / heat sink Main current path and primary thermal interface; electrically tied to PCB copper pour for thermal dissipation.
Tab (Collector) Collector extension Exposed metal pad on underside; must be soldered to large copper area to achieve RθJA = 42°C/W rating.

Key Features

Feature Design Value
Low saturation voltage VCE(SAT) ≤ 35 mV typical at IC = 1A - minimizes conduction loss in high-duty-cycle switching applications.
High-current gain retention hFE ≥ 30 at IC = 20A - maintains control authority during transient overloads, reducing required base drive power.
Thermally optimized package SOT223 with exposed collector tab - enables 3.0 W continuous power dissipation with standard PCB heatsinking (no heatsink required).
AEC-Q101 qualification Automotive-grade reliability testing passed - suitable for under-hood and infotainment power stages requiring extended temperature (-55°C to +150°C) operation.

Applications

DC-DC Converters MOSFET Gate Drivers

Use Scenario: Step-down (buck) converter output stage in industrial power supplies.

IC Role / Device Role / Timing Role: Low-side saturated switch controlling energy transfer into output inductor.

Use Value: 28mΩ effective RSAT at 6.5A reduces conduction loss by >40% vs. comparable transistors, improving full-load efficiency.

Use Scenario: High-current driver for enhancement-mode GaN FETs in fast-switching PFC stages.

IC Role / Device Role / Timing Role: Current-source buffer amplifying microcontroller GPIO to deliver 300mA peak base current.

Use Value: Verified 425ns tOFF and 37ns tON support gate drive at >500kHz without shoot-through risk.

Charging Circuits Motor Control

Use Scenario: Constant-current battery charging switch in USB-PD portable chargers.

IC Role / Device Role / Timing Role: Series pass element regulating charge current via base-controlled saturation.

Use Value: Tight VCE(SAT) tolerance (±15mV) ensures ±2% current regulation accuracy across temperature.

Use Scenario: H-bridge low-side switch in 12V brushed DC motor controllers for automotive HVAC actuators.

IC Role / Device Role / Timing Role: PWM-controlled power switch delivering up to 7A continuous motor current.

Use Value: AEC-Q101 qualification and 150°C TJ rating ensure reliability in sealed, thermally constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ZXTN2010GTA Higher VCEO = 40V, same SOT223 package, but VCE(SAT) = 65mV @ 1A (30% higher loss) Better for 36V nominal systems; less efficient at 12–24V rails due to higher saturation voltage Select when higher breakdown margin is critical and thermal headroom allows for increased loss.
MMBT4401LT1G Lower IC = 600mA, SOT-23 package, VCE(SAT) = 750mV @ 150mA - not scalable to 7A Only suitable for signal-level or low-power switching; cannot replace ZXTN2007GTA in power stages Use only for logic-level interfacing or bias networks - not a functional substitute in power applications.

Compared with ZXTN2007GTA, ZXTN2010GTA trades lower conduction loss for higher voltage rating, while MMBT4401LT1G lacks both current capacity and thermal capability - making ZXTN2007GTA uniquely suited for 7A, 30V saturated switching where efficiency and reliability are co-prioritized.

Availability

ZXTN2007GTA is available at Aetrix Electronics and suitable for DC-DC converters, MOSFET gate drivers, and motor control applications requiring stable component supply, AEC-Q101 compliance, and SOT223 thermal performance.

Supply support for ZXTN2007GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

ZXTN2007GTA belongs to Diodes' ZXT series of high-current, low-saturation bipolar transistors - engineered specifically for automotive and industrial power switching where thermal robustness and gain stability at high current are essential.

FAQ

Is ZXTN2007GTA pin-compatible with other SOT223 NPN transistors?

No - while the SOT223 footprint is standardized, pin assignment (Emitter/Base/Collector) varies across manufacturers and product families. ZXTN2007GTA uses the Diodes-specific pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector (tab). Always verify layout against the official AP02002 package drawing before PCB design.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation up to this limit when thermal design meets the specified RθJA = 42°C/W condition (52mm × 52mm 2oz Cu). Derating begins above +25°C ambient, with linear reduction of PD to zero at +125°C ambient under that mounting condition.

Can ZXTN2007GTA be used in linear regulator applications?

Yes - its high hFE (≥100 at 1A) and low VCE(SAT) support use as a pass transistor in adjustable linear regulators, but power dissipation must remain within the SOA limits. At 7A output, even 100mV dropout yields 0.7W loss - acceptable only with adequate heatsinking and derated ambient temperature.

Does ZXTN2007GTA require a base resistor in all switching configurations?

Yes - base current must be actively limited to prevent damage and ensure predictable saturation. For IC = 7A, recommended IB = 300mA (IC/IB ≈ 23), requiring a low-impedance driver and appropriate series resistance to avoid exceeding VBE(SAT) = 1.13V and maintain safe power dissipation in the base region.

ZXTN2007GTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
7 A
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
220mV @ 300mA, 6.5A
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 1V
Power - Max:
3 W
Frequency - Transition:
140MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3

ZXTN2007GTA FAQ

1.How can I place an order for ZXTN2007GTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTN2007GTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTN2007GTA reliable?

The price and inventory of ZXTN2007GTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN2007GTA is usually 5 days.

3.What payment methods are accepted for ZXTN2007GTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN2007GTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTN2007GTA?

ZXTN2007GTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTN2007GTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTN2007GTA?

For technical support, including ZXTN2007GTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN2007GTA requirements.

6.How does Aetrix verify that ZXTN2007GTA is sourced from the original manufacturer or authorized distributors?

All ZXTN2007GTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN2007GTA meets industry standards.

7.What is the process for return or replacement of ZXTN2007GTA?

All ZXTN2007GTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN2007GTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTN2007GTA part is unused and in its original packaging.

Return procedure for ZXTN2007GTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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