Diodes Incorporated ZXTN2007ZTA

Overview

ZXTN2007ZTA from Diodes Incorporated is a 30V NPN medium-power transistor in SOT89 package, rated for 6.0A continuous collector current, with V_CE(sat) ≤ 25 mV at I_C = 1 A / I_B = 100 mA and R_sat = 23 mΩ, used as a high-efficiency power switch in DC-DC converters and MOSFET gate drivers.

For engineers reviewing the ZXTN2007ZTA datasheet, ZXTN2007ZTA pinout, ZXTN2007ZTA application, or ZXTN2007ZTA equivalent, key selection criteria include low saturation voltage under high-current switching, thermal performance on FR4 PCBs, SOT89 thermal derating behavior, and compatibility with automotive-grade design requirements (AEC-Q101 capable).

Technical Context

This NPN bipolar junction transistor operates in linear and saturated switching modes, with BVCBO = 80 V and BVCEO = 30 V, supporting robust blocking capability in low-voltage power stages. Its f_T = 140 MHz enables fast turn-on/turn-off transitions, while low V_BE(sat) = 1.1 V at I_C = 6.5 A ensures efficient base drive in high-current gate driver circuits.

Thermal design is defined by two R_θJA ratings: 83 °C/W (25 mm × 25 mm copper) and 60 °C/W (50 mm × 50 mm copper), reflecting its dependence on PCB copper area for power dissipation. The device's h_FE = 100–300 across I_C = 10 mA to 7 A supports stable current amplification in both analog control and digital switching configurations.

Key Specifications

Pinout & Package

Package: SOT89 - Surface-mount plastic package with integrated heat sink tab (pin 3), rated for 1.5–2.1 W power dissipation depending on PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Compared with ZXTN2007ZTA, ZXTN25040DFH trades current capacity for smaller footprint and higher voltage rating, while MJD122G offers greater current headroom at the cost of significantly higher V_CE(sat) and larger package-making ZXTN2007ZTA optimal for compact, high-efficiency 6 A switching where thermal budget is tight.

Availability

ZXTN2007ZTA is available at Aetrix Electronics and suitable for DC-DC converters, MOSFET gate drivers, and motor control applications requiring stable component supply, automotive-qualified sourcing, and consistent SOT89 thermal performance.

Supply support for ZXTN2007ZTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for industrial, computing, and automotive markets.

ZXTN2007ZTA belongs to Diodes' ZXT series of medium-power bipolar transistors, engineered for high-current switching in space-constrained power stages where low saturation voltage and predictable thermal behavior are essential.

FAQ

What is the maximum allowable junction temperature for ZXTN2007ZTA?

The ZXTN2007ZTA has an operating junction temperature range of –55 °C to +150 °C. Its absolute maximum T_J is 150 °C; sustained operation above this threshold risks permanent degradation. Derating begins at T_A = 25 °C using R_θJA = 60 °C/W (50 mm × 50 mm copper), limiting usable power to ~1.7 W at 100 °C ambient.

Can ZXTN2007ZTA replace a MOSFET in low-side switching applications?

Yes, but with trade-offs: ZXTN2007ZTA provides lower gate drive complexity (no gate charge requirement) and better linearity in analog current regulation, yet exhibits higher conduction loss than equivalently rated MOSFETs due to V_CE(sat) vs. R_DS(on). It is preferred where simplicity, cost, or thermal stability outweigh ultra-low R_DS(on) needs.

Is ZXTN2007ZTA qualified for automotive use?

ZXTN2007ZTA is manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified to AEC-Q101, Diodes states it meets requirements for automotive applications "requiring specific change control" - meaning qualification can be completed per customer program needs, including stress testing and lot traceability.

How does the SOT89 package affect PCB layout for thermal management?

The SOT89's exposed collector tab must be soldered to a large copper pour (≥50 mm × 50 mm recommended) to achieve R_θJA = 60 °C/W. Thermal vias under the tab improve heat transfer to inner layers; insufficient copper area raises R_θJA to 83 °C/W, cutting max power by ~30%. Avoid routing signal traces under the tab to preserve thermal path integrity.