Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated ZXTN2010ASTZ

Part No.:
ZXTN2010ASTZ
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
E-Line-3
Datasheet:
AetrixZXTN2010ASTZ.pdf
Description:
TRANS NPN 60V 4.5A E-LINE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,990

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ZXTN2010ASTZ from Diodes Incorporated (formerly Zetex Semiconductors) is a 60V NPN medium-power bipolar junction transistor in E-line (SOT89-3) package, featuring VCE(SAT) = 40 mV at IC = 1 A / IB = 100 mA, RSAT ≈ 34 mΩ, and continuous IC = 4.5 A - optimized for low-loss switching in DC-DC converters and solenoid/relay drivers.

For engineers reviewing the ZXTN2010ASTZ datasheet, ZXTN2010ASTZ pinout, ZXTN2010ASTZ application, or ZXTN2010ASTZ equivalent, key selection criteria include saturation voltage at high current, thermal resistance (RJA = 125 °C/W on FR4), peak pulse rating (15 A), and E-line package compatibility with board-level thermal management in motor control and backlight inverter designs.

Technical Context

This NPN BJT operates in linear and saturated switching modes, with guaranteed BVCEO = 60 V and BVCBO = 150 V to support robust overvoltage margin in inductive load switching. Its hFE ranges from 100 (IC = 10 mA) to 40 (IC = 10 A), enabling stable base drive design across wide current range.

Switching performance is characterized by tON = 42 ns and tOFF = 760 ns under 1 A, 10 V conditions, supported by fT = 130 MHz and COBO = 31 pF - suitable for medium-frequency power control up to ~500 kHz without significant switching loss penalty.

Key Specifications

ParameterValue and Actual Design Meaning
VCE(SAT)40 mV @ IC = 1 A, IB = 100 mA - enables <100 mW conduction loss at 1 A, critical for thermally constrained DC-DC stages
IC (continuous)4.5 A - supports sustained load current in fan drivers and solenoid hold circuits without derating below 71°C ambient
RJA125 °C/W - defined for through-hole mounting on 25 mm × 25 mm × 1.6 mm FR4 with 1 oz copper; sets max power dissipation at 0.71 W @ TA = 25°C
fT130 MHz - confirms usable gain-bandwidth for feedback loop compensation in analog power control or fast-switching applications
tOFF760 ns - determines minimum off-time in PWM-driven loads; compatible with 1–2 kHz motor commutation and 20–50 kHz DC-DC operation
hFE40 @ IC = 10 A - ensures predictable base drive requirement (IB ≥ 250 mA) for full saturation at peak load

Pinout & Package

E-line (SOT89-3) surface-mount package with exposed collector tab for thermal conduction; standard pin assignment: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector (tab).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Emitter)Current return path for collector-emitter conductionLow-inductance connection point; referenced to ground or low-side switch node in high-efficiency topologies
Pin 2 (Base)Control terminal for minority-carrier injectionRequires 100–200 mA drive for full saturation at 1–5 A; sensitive to ESD (BVEBO = 7 V)
Pin 3 (Collector)Main current output terminal and thermal interfaceExposed metal tab electrically connected to collector; must be isolated from heatsink unless collector is at system ground potential

Key Features

FeatureDesign Value
Ultra-low VCE(SAT)40 mV @ 1 A - reduces conduction loss by >50% vs. standard 60 V NPNs, directly improving efficiency in battery-powered modules
High peak current capability15 A pulsed - sustains short-term inrush in relay coils and DC motor startup without secondary breakdown
Thermally enhanced E-line packageRJA = 125 °C/W - enables higher power density than SOT23/SOT223 alternatives in space-constrained lighting and actuator PCBs
Guaranteed BVCEO60 V minimum - provides 20% margin above 48 V nominal bus systems, supporting industrial and telecom power rail robustness

Applications

Emergency Lighting ControlDC Fan Motor Driver

Use Scenario: Constant-current LED string driver with boost converter and MOSFET gate-controlled BJT switch for dimming and fault cutoff.

IC Role / Device Role / Timing Role: Low-saturation NPN switch handling up to 4.5 A LED load current during emergency mode, triggered by microcontroller GPIO.

Use Value: 40 mV VCE(SAT) limits self-heating to <200 mW at full load, eliminating need for external heatsink in compact enclosures.

Use Scenario: PWM-controlled 24 V DC brushless fan in industrial HVAC unit requiring reliable start-up torque and thermal shutdown margin.

IC Role / Device Role / Timing Role: High-current NPN switch in low-side configuration driving fan winding; base driven by MCU PWM via resistor network.

Use Value: 15 A peak rating accommodates 3× stall current; RSAT ≈ 34 mΩ minimizes voltage drop across transistor during PWM on-time.

Solenoid Actuator InterfaceCCFL Backlight Inverter

Use Scenario: 12 V/2 A solenoid valve driver in automated fluid control system with reverse-polarity and flyback protection.

IC Role / Device Role / Timing Role: Medium-power NPN switch turning solenoid on/off; flyback diode integrated into PCB layout adjacent to collector pin.

Use Value: BVCEO = 60 V withstands >40 V inductive kickback; tOFF = 760 ns ensures clean turn-off before next cycle in 100 Hz sequencing.

Use Scenario: High-voltage AC generation stage in LCD monitor backlight inverter using Royer or push-pull topology with center-tapped transformer.

IC Role / Device Role / Timing Role: Primary-side NPN switch operating at 20–50 kHz, conducting transformer primary current and sustaining flyback voltage spikes.

Use Value: BVCBO = 150 V and fT = 130 MHz support stable oscillation and minimal switching loss at 30 kHz fundamental frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZXTN2020ASTZVCE(SAT) = 50 mV @ 1 A; hFE = 30 @ 10 A; same E-line packageHigher saturation voltage increases conduction loss by ~25% at 1 A; lower hFE demands stronger base driveSelect when cost sensitivity outweighs 10 mV VCE(SAT) advantage and base drive capability is ample
MJD122GTO-220 package; VCE(SAT) = 1.2 V @ 3 A; RJA = 40 °C/W (with heatsink)Requires mechanical heatsink; unsuitable for space-constrained SMT layouts but handles higher continuous powerSelect only when >1 W continuous dissipation is required and board area allows TO-220 footprint

Compared with ZXTN2020ASTZ, ZXTN2010ASTZ delivers lower conduction loss and better high-current gain; versus MJD122G, it trades thermal headroom for SMT manufacturability and reduced board area - ideal for compact, high-efficiency 48 V-class power interfaces.

Availability

ZXTN2010ASTZ is available at Aetrix Electronics and suitable for emergency lighting control, DC fan motor driving, and solenoid actuator interfacing requiring stable component supply and consistent parametric performance across production batches.

Supply support for ZXTN2010ASTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its legacy of high-performance discrete semiconductors for power management and signal conditioning.

ZXTN2010ASTZ belongs to Zetex's E-line NPN transistor family, engineered specifically for low-saturation, medium-power switching in space- and thermally-constrained DC-DC, motor, and lighting applications.

FAQ

What is the maximum safe operating temperature for ZXTN2010ASTZ?

The device supports junction temperatures from –55 °C to +150 °C. With RJA = 125 °C/W on standard FR4, maximum continuous power at TA = 71 °C is 0.63 W - exceeding this requires thermal derating or improved copper pour. Absolute max TJ must not exceed 150 °C to avoid permanent degradation.

Can ZXTN2010ASTZ replace a MOSFET in low-side switching applications?

Yes, but with trade-offs: it offers lower gate-drive complexity (no gate charge) and higher avalanche ruggedness, yet requires ~200 mA base current for full saturation at 5 A versus nanoampere gate leakage in MOSFETs. Use where drive strength is available and cost/size favor bipolar architecture.

Is the collector tab electrically isolated in the E-line package?

No - the exposed collector tab is internally bonded to Pin 3 (Collector) and is not insulated. When mounting to a heatsink or copper plane, ensure electrical isolation via insulating pad or dielectric coating unless the collector node is at system ground potential.

Does ZXTN2010ASTZ support pulsed operation beyond its 4.5 A continuous rating?

Yes - absolute maximum rating specifies ICM = 15 A peak under pulsed conditions (300 µs width, 2% duty cycle). This enables brief inrush current handling in relay/solenoid actuation and motor startup, provided average power remains within thermal limits defined by RJA and ambient conditions.

ZXTN2010ASTZ Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
E-Line-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
4.5 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
210mV @ 200mA, 5A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 2A, 1V
Power - Max:
710 mW
Frequency - Transition:
130MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
E-Line (TO-92 compatible)

ZXTN2010ASTZ FAQ

1.How can I place an order for ZXTN2010ASTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTN2010ASTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTN2010ASTZ reliable?

The price and inventory of ZXTN2010ASTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN2010ASTZ is usually 5 days.

3.What payment methods are accepted for ZXTN2010ASTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN2010ASTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTN2010ASTZ?

ZXTN2010ASTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTN2010ASTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTN2010ASTZ?

For technical support, including ZXTN2010ASTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN2010ASTZ requirements.

6.How does Aetrix verify that ZXTN2010ASTZ is sourced from the original manufacturer or authorized distributors?

All ZXTN2010ASTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN2010ASTZ meets industry standards.

7.What is the process for return or replacement of ZXTN2010ASTZ?

All ZXTN2010ASTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN2010ASTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTN2010ASTZ part is unused and in its original packaging.

Return procedure for ZXTN2010ASTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZXTN2010ASTZ Tags

  • ZXTN2010ASTZ
  • ZXTN2010ASTZ PDF
  • ZXTN2010ASTZ Datasheet
  • ZXTN2010ASTZ Specifications
  • ZXTN2010ASTZ Images
  • Diodes Incorporated
  • Diodes Incorporated ZXTN2010ASTZ
  • Buy ZXTN2010ASTZ
  • ZXTN2010ASTZ Price
  • ZXTN2010ASTZ Distributor
  • ZXTN2010ASTZ Supplier
  • ZXTN2010ASTZ Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER