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Diodes Incorporated ZXTN25012EFHTA

Part No.:
ZXTN25012EFHTA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixZXTN25012EFHTA.pdf
Description:
TRANS NPN 12V 6A SOT-23-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:8,705

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Product details

Overview

ZXTN25012EFHTA from Diodes Incorporated (formerly Zetex Semiconductors) is an NPN medium-power bipolar junction transistor in SOT23 package, rated for 12V VCEO, 6A continuous collector current, and 1.25W power dissipation on standard PCB layout; features VCE(sat) < 32mV @ 1A/100mA, hFE > 500, and 6V reverse emitter-collector blocking voltage; used in MOSFET gate drive stages of compact DC-DC converters.

For engineers reviewing the ZXTN25012EFHTA datasheet, ZXTN25012EFHTA pinout, ZXTN25012EFHTA application, or ZXTN25012EFHTA equivalent, key selection criteria include verified low saturation voltage at high IC, guaranteed gain stability up to 4A, thermal resistance under real board-mount conditions, and SOT23-compatible footprint for space-constrained motor control and power switch designs.

Technical Context

This device employs advanced epitaxial process and optimized metallization to sustain 6A continuous collector current while maintaining sub-32mV VCE(sat) at IC = 1A and IB = 100mA. Its 6V reverse blocking capability (VECX) enables bidirectional switching in half-bridge gate driver configurations.

The transistor delivers hFE ≥ 500 at IC = 1A and exhibits fT = 260MHz, supporting fast switching in PWM-controlled DC fans and synchronous rectifier drivers where gain-bandwidth trade-offs impact loop stability.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO12 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in low-voltage switching applications.
IC(cont)6 A - Continuous collector current rating on 50mm × 50mm FR4 PCB with 2 oz copper; enables direct drive of small PMDC motors.
VCE(sat)28–32 mV @ 1A/100mA - Confirmed low saturation voltage reduces conduction loss in high-duty-cycle gate drivers.
hFE500–800 @ 1A - High DC current gain ensures sufficient base drive margin without excessive base current overhead.
RJA100 °C/W - Junction-to-ambient thermal resistance on 50mm × 50mm PCB; determines temperature rise under 1.25W dissipation.
fT260 MHz - Transition frequency at IC = 50mA/VCE = 10V; supports clean switching edges in 100–500 kHz DC-DC topologies.
VECX6 V - Reverse emitter-collector breakdown voltage; enables use as active clamp or reverse-current blocking element.

Pinout & Package

SOT23-3 plastic surface-mount package with gull-wing leads; 2.80–3.04 mm length, 1.20–1.40 mm width, 1.12 mm max height; JEDEC MO-215 compliant.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)ECurrent sink node; connected to ground or low-side return path in common-emitter switch configurations.
2 (Base)BControl input; requires ~100mA base drive for full saturation at 1A collector load.
3 (Collector)CCurrent source node; ties to switched rail or MOSFET gate in high-side driver arrangements.

Key Features

FeatureDesign Value
High power dissipation in SOT231.25W on 50mm × 50mm PCB - Enables replacement of larger packages without redesigning board layout.
Very high DC current gainhFE ≥ 500 @ 1A - Reduces base drive circuit complexity and power loss in discrete driver stages.
Low saturation voltageVCE(sat) ≤ 32mV @ 1A - Limits conduction loss to <32mW, critical for thermally constrained fan and motor control modules.
6V reverse blockingVECX = 6V - Allows safe operation during flyback or inductive kickback events in unidirectional switches.
Fast switching speedtf = 71.6ns, ts = 233ns - Supports efficient operation up to 500kHz PWM frequencies in DC-DC controllers.

Applications

MOSFET Gate DriverDC-DC Converter Switch

Use Scenario: Driving the gate of a 30V N-channel MOSFET in a synchronous buck converter operating at 300kHz.

IC Role / Device Role / Timing Role: NPN switch providing low-impedance pull-down path during MOSFET turn-off; complements PNP or PMOS high-side driver.

Use Value: 32mV VCE(sat) minimizes power loss during gate discharge, improving efficiency by ~0.3% at 5A output.

Use Scenario: Low-side switch controlling energy transfer in a 12V-input boost converter for USB-PD power delivery.

IC Role / Device Role / Timing Role: Medium-power BJT acting as main switching element in non-synchronous topology with external diode.

Use Value: 6A IC rating and 260MHz fT support stable operation at 250kHz with <100ns switching transitions.

Brushed DC Motor ControlDC Fan Driver

Use Scenario: H-bridge low-side leg driving a 24V, 3A PMDC motor in automotive HVAC blower module.

IC Role / Device Role / Timing Role: Discrete NPN transistor delivering controlled current to motor winding; operated in linear or PWM mode.

Use Value: 1.25W PD and 100°C/W RJA allow sustained 3A operation without heatsink on standard 2-layer PCB.

Use Scenario: Constant-current driver for 12V, 0.8A cooling fan in network switch chassis.

IC Role / Device Role / Timing Role: Linear regulator bypass transistor regulating fan speed via base voltage modulation.

Use Value: hFE ≥ 500 ensures precise current control with <5% variation across temperature and unit-to-unit spread.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZXTN25012E6TASame die, EIAJ SC-70 (SOT-323) package; 0.75W PD, higher RJA (130°C/W).Lower power handling limits use to <3A continuous loads; unsuitable for 6A motor drive.Select only when board area is more critical than thermal margin and peak current.
MMBT2222ALT1GLower IC (600mA), lower VCEO (40V), higher VCE(sat) (1V @ 150mA); TO-236AB package.Not suitable for >1A switching; usable only in signal-level or low-current bias applications.Acceptable only for pre-driver or logic interface stages-not as main power switch.

Compared with ZXTN25012E6TA and MMBT2222ALT1G, ZXTN25012EFHTA uniquely combines 6A current capability, sub-32mV saturation, and SOT23 thermal performance-making it irreplaceable in compact, high-current gate driver and motor control roles where both electrical and thermal specs must be simultaneously met.

Availability

ZXTN25012EFHTA is available at Aetrix Electronics and suitable for MOSFET gate drivers, DC-DC converter switches, and brushed DC motor control requiring stable component supply across industrial and automotive production programs.

Supply support for ZXTN25012EFHTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance discrete portfolio with focus on power efficiency and miniaturization.

ZXTN25012EFHTA belongs to Zetex's "medium-power BJT" product line, engineered specifically for space-constrained power switching applications demanding high current density and low conduction loss in SOT23 footprint.

FAQ

What is the maximum continuous collector current for ZXTN25012EFHTA under standard PCB conditions?

The maximum continuous collector current is 6A when mounted on a 50mm × 50mm × 1.6mm FR4 PCB with high-coverage 2 oz copper, per datasheet condition (c). Derating applies above 25°C ambient: 9.6 mW/°C reduction in power dissipation, limiting usable IC at elevated temperatures.

Does ZXTN25012EFHTA support reverse current blocking in circuit design?

Yes - it specifies VECX = 6V (emitter-collector reverse breakdown), enabling safe operation during inductive flyback or bidirectional current transients. This allows use in active clamp circuits or as reverse-current protection in half-bridge configurations where emitter is biased positive relative to collector.

Can ZXTN25012EFHTA replace a MOSFET in low-side switching applications?

It can serve as a low-side switch but is not a MOSFET replacement in gate-drive-critical roles. Its 100mA base drive requirement and 32mV VCE(sat) make it efficient for moderate-speed, high-current BJT switching - however, it lacks MOSFET advantages like zero gate current and voltage-controlled operation.

What is the thermal resistance junction-to-ambient for ZXTN25012EFHTA on a typical 2-layer PCB?

On a 50mm × 50mm × 1.6mm FR4 PCB with single-sided 2 oz copper, RJA = 100°C/W. This value assumes high copper coverage and still-air conditions; actual thermal performance improves with internal planes, thermal vias, or forced airflow, and degrades significantly on smaller or thinner boards.

ZXTN25012EFHTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
6 A
Voltage - Collector Emitter Breakdown (Max):
12 V
Vce Saturation (Max) @ Ib, Ic:
190mV @ 120mA, 6A
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
500 @ 10mA, 2V
Power - Max:
1.25 W
Frequency - Transition:
260MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

ZXTN25012EFHTA FAQ

1.How can I place an order for ZXTN25012EFHTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTN25012EFHTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTN25012EFHTA reliable?

The price and inventory of ZXTN25012EFHTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN25012EFHTA is usually 5 days.

3.What payment methods are accepted for ZXTN25012EFHTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN25012EFHTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTN25012EFHTA?

ZXTN25012EFHTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTN25012EFHTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTN25012EFHTA?

For technical support, including ZXTN25012EFHTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN25012EFHTA requirements.

6.How does Aetrix verify that ZXTN25012EFHTA is sourced from the original manufacturer or authorized distributors?

All ZXTN25012EFHTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN25012EFHTA meets industry standards.

7.What is the process for return or replacement of ZXTN25012EFHTA?

All ZXTN25012EFHTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN25012EFHTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTN25012EFHTA part is unused and in its original packaging.

Return procedure for ZXTN25012EFHTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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