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Diodes Incorporated ZXTN25012EFLTA
- Part No.:
- ZXTN25012EFLTA
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
ZXTN25012EFLTA.pdf
- Description:
- TRANS NPN 12V 2A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,391
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Product details
Overview
ZXTN25012EFLTA from Diodes Incorporated (formerly Zetex Semiconductors) is a 12V, 2A SOT23 NPN low-power transistor optimized for high-pulse-current switching with VCE(sat) < 65 mV at 1A, hFE > 500, and 6V reverse blocking capability. It serves as a robust interface switch in gate-driving, DC-DC conversion, and LED load control circuits.
For engineers reviewing the ZXTN25012EFLTA datasheet, ZXTN25012EFLTA pinout, ZXTN25012EFLTA application, or ZXTN25012EFLTA equivalent, key selection criteria include its low saturation voltage under high current, high DC current gain stability at 1–2A, reverse emitter-collector blocking rating, thermal resistance of 357°C/W, and SOT23 package compatibility with space-constrained PCB layouts.
Technical Context
This NPN bipolar junction transistor uses an advanced process to sustain high current gain during pulsed operation, enabling reliable switching of transient loads up to 15A peak. Its BVECO = 4.5V and BVECX = 6V support reverse-biased emitter-collector operation in active clamp or bidirectional interface roles.
The device exhibits fT = 260 MHz at IC = 50mA, VCE = 10V, confirming suitability for medium-speed switching (e.g., <100 kHz PWM), while td/tr/ts/tf values (71/70/233/72 ns) reflect fast turn-on and controlled storage time for efficient power stage control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 12 V - Maximum safe collector-emitter voltage under open-base condition; defines primary breakdown limit in common-emitter switching. |
| IC(cont) | 2 A - Continuous DC collector current rating; supports sustained load drive without thermal runaway on FR4 PCB with 1oz copper. |
| VCE(sat) | <65 mV @ 1A/100mA - Enables ultra-low conduction loss in high-efficiency gate drivers and LED current switches. |
| hFE | 500–800 @ 10mA - High DC current gain ensures low base drive requirement and stable biasing across temperature. |
| RJA | 357 °C/W - Thermal resistance from junction to ambient on standard 25×25 mm FR4 board; informs heatsinking needs for >500 mW dissipation. |
| BVECX | 6 V - Reverse emitter-collector blocking voltage with base biased via 1 kΩ or clamped to ±0.25 V; enables use in active-clamp topologies. |
Pinout & Package
Package: SOT23 (3-lead plastic surface-mount package per JEDEC TO-236AB, 2.80–3.04 mm length, 1.20–1.40 mm width, 1.12 mm max height).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emitting terminal for majority carriers | Low-impedance return path; connected to ground or low-side reference in common-emitter configurations. |
| 2 (Base) | Control electrode for carrier injection | Accepts low-current drive (≤500 mA) to modulate 2A collector current; requires series resistor for current limiting. |
| 3 (Collector) | Current collection terminal | Connected to load or switching node; handles full load current and must be routed with adequate copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| High peak pulse current capability | 15 A rated peak (non-repetitive), enabling short-duration surge handling in motor start-up or capacitor charging. |
| Low VCE(sat) at high IC | <130 mV @ 2A/40mA - reduces conduction loss by >50% vs. typical general-purpose transistors at same current. |
| Reverse emitter-collector blocking | 6 V (BVECX) - permits safe operation in circuits where emitter may rise above collector during flyback or clamp events. |
| Stable hFE across operating range | 370–575 @ 2A - maintains predictable base drive requirements even under heavy load conditions. |
Applications
| LED Driving | MOSFET Gate Driving |
|---|---|
Use Scenario: Constant-current switching for high-brightness LEDs in automotive interior lighting and signage. IC Role / Device Role / Timing Role: Low-saturation NPN switch controlling LED cathode path with PWM dimming at ≤100 kHz. Use Value: Sub-65 mV VCE(sat) minimizes power loss and thermal rise in compact LED modules, extending lifetime and simplifying thermal design. | Use Scenario: Driving N-channel MOSFET gates in synchronous buck converters and half-bridge inverters. IC Role / Device Role / Timing Role: Fast-turn-on NPN pull-down switch discharging gate capacitance rapidly to ensure clean turn-off transitions. Use Value: 70 ns rise time and 233 ns storage time enable precise dead-time control and reduce shoot-through risk in high-frequency power stages. |
| DC-DC Conversion | Low-Voltage Interface |
Use Scenario: Secondary-side synchronous rectification control and auxiliary bias winding regulation in isolated flyback supplies. IC Role / Device Role / Timing Role: High-gain, low-loss switch regulating feedback optocoupler current or auxiliary rail voltage. Use Value: hFE ≥500 at 1A ensures stable regulation with minimal base drive overhead, improving light-load efficiency. | Use Scenario: Level-shifting interface between 3.3V/5V logic ICs and 12V solenoid or relay loads in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Single-transistor level translator and current amplifier isolating low-voltage control logic from higher-voltage actuation circuitry. Use Value: 12V VCEO and 6V reverse blocking allow safe operation across supply rail mismatches without external protection diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN25012E6TA | Same die, 7-inch reel (vs. 8 mm tape width); identical electrical specs and SOT23-3 package. | No functional difference; differs only in packaging format (reel size/tape width) for automated assembly line compatibility. | Select based on SMT line feeder configuration-not electrical performance. |
| MMBT2222ALT1G | Lower IC(cont) = 600 mA, VCE(sat) ≈ 1 V @ 150 mA, hFE = 100–300 - significantly lower current and gain capability. | Suitable only for signal-level or low-power switching; cannot replace ZXTN25012EFLTA in 1–2A load applications. | Use only where load current ≤300 mA and saturation loss budget allows >5× higher VCE(sat). |
Compared with ZXTN25012EFLTA, ZXTN25012E6TA offers identical performance in alternate tape format, while MMBT2222ALT1G provides basic NPN functionality but lacks the high-current, low-saturation, and reverse-blocking capabilities required for demanding power interface roles.
Availability
ZXTN25012EFLTA is available at Aetrix Electronics and suitable for MOSFET gate driving, LED current switching, and low-voltage interface applications requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for ZXTN25012EFLTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and continues its legacy of high-performance discrete semiconductors with ISO 9001 and IATF 16949 certification.
This device belongs to Zetex's "Power Transistor" product line, engineered specifically for high-efficiency, high-pulse-current switching in space-constrained power interfaces and load drivers.
FAQ
What is the maximum continuous collector current for ZXTN25012EFLTA?
The maximum continuous collector current is 2 A under specified thermal conditions: mounted on a 25 mm × 25 mm × 1.6 mm FR4 PCB with single-sided 1 oz copper in still air. Derating begins at 2.8 mW/°C above 25°C ambient, limiting usable current at elevated temperatures.
Does ZXTN25012EFLTA support reverse voltage across emitter and collector?
Yes - it specifies BVECX = 6 V (min), measured with base biased via 1 kΩ or clamped between ±0.25 V. This enables safe operation in active-clamp, flyback snubber, or bidirectional interface circuits where emitter voltage may exceed collector voltage transiently.
Can ZXTN25012EFLTA replace a standard 2N2222 in high-current applications?
No - while functionally similar as an NPN transistor, ZXTN25012EFLTA delivers 2 A continuous current and <65 mV VCE(sat) at 1A, whereas 2N2222 is rated for 800 mA and exhibits ~1 V saturation. Direct substitution risks thermal failure and excessive conduction loss.
What is the thermal resistance junction-to-ambient for ZXTN25012EFLTA?
RJA is 357°C/W when mounted on a 25 mm × 25 mm × 1.6 mm FR4 PCB with high-coverage single-sided 1 oz copper in still air. This value assumes no additional heatsinking; actual thermal performance improves with larger copper areas, internal layers, or forced airflow.
ZXTN25012EFLTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 12 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 100mA, 5A
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 500 @ 10mA, 2V
- Power - Max:
- 350 mW
- Frequency - Transition:
- 260MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
ZXTN25012EFLTA FAQ
1.How can I place an order for ZXTN25012EFLTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXTN25012EFLTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXTN25012EFLTA reliable?
The price and inventory of ZXTN25012EFLTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN25012EFLTA is usually 5 days.
3.What payment methods are accepted for ZXTN25012EFLTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN25012EFLTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXTN25012EFLTA?
ZXTN25012EFLTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXTN25012EFLTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXTN25012EFLTA?
For technical support, including ZXTN25012EFLTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN25012EFLTA requirements.
6.How does Aetrix verify that ZXTN25012EFLTA is sourced from the original manufacturer or authorized distributors?
All ZXTN25012EFLTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN25012EFLTA meets industry standards.
7.What is the process for return or replacement of ZXTN25012EFLTA?
All ZXTN25012EFLTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN25012EFLTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXTN25012EFLTA part is unused and in its original packaging.
Return procedure for ZXTN25012EFLTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ZXTN25012EFLTA Tags
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MMBT3906LT1G
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Diodes Incorporated
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MMBT2222A-7-F
Diodes Incorporated
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Nexperia USA Inc.
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