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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated ZXTN25040DFLTA

Name: ZXTN25040DFLTA
Brand: Diodes Incorporated
SKU: ZXTN25040DFLTA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXTN25040DFLTA

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: ZXTN25040DFLTA.pdf

Description:: TRANS NPN 40V 1.5A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZXTN25040DFLTA from Diodes Incorporated (formerly Zetex Semiconductors) is a 40V, 1.5A SOT23 NPN low-power transistor optimized for high-pulse-current switching in gate drive and DC-DC applications. It delivers V_CE(sat) ≤ 85 mV at 1 A, BV_CEX = 130 V forward blocking, and h_FE = 170–250 at 1.5 A, enabling robust MOSFET/IGBT gate control in compact power interfaces.

For engineers reviewing the ZXTN25040DFLTA datasheet, ZXTN25040DFLTA pinout, ZXTN25040DFLTA application, or ZXTN25040DFLTA equivalent, key selection criteria include its 130 V forward blocking capability, low 59 mΩ R_CE(sat), 350 mW power rating, SOT23 thermal performance (R_JA = 357 °C/W), and verified pulse current handling up to 6 A.

Technical Context

This NPN bipolar junction transistor employs an advanced process to sustain high current gain under pulsed conditions, supporting fast switching with t_d = 64 ns, t_r = 108 ns, t_s = 428 ns, and t_f = 130 ns at V_CC = 10 V, I_C = 1 A. Its 130 V BV_CEX enables safe operation during inductive turn-off transients in gate drivers.

The device features asymmetric blocking: 130 V collector-base (forward), 6 V emitter-collector (reverse), and 7 V emitter-base-making it suitable for unidirectional high-voltage switching where reverse voltage stress is limited. f_T = 190 MHz confirms usable RF-grade switching behavior at moderate currents.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - maximum continuous collector-emitter voltage under open-base condition
V_CEX	130 V - forward-blocking voltage with base-emitter resistor <1 kΩ or biased within –1 V to +0.25 V
I_C(cont)	1.5 A - continuous collector current rating at T_amb = 25°C on FR4 PCB
V_CE(sat)	70–85 mV @ 1 A / 100 mA - ensures minimal conduction loss in high-efficiency switch mode
h_FE	170–250 @ 1.5 A - stable current gain at high output current supports predictable base drive sizing
R_JA	357 °C/W - thermal resistance defines junction-to-ambient rise per watt on standard 25 mm × 25 mm × 0.6 mm FR4 board
f_T	190 MHz - transition frequency validates suitability for >10 MHz switching in gate driver stages

Pinout & Package

SOT23 package: 3-lead surface-mount plastic case with standardized footprint (D = 2.80–3.04 mm, E = 2.10–2.64 mm, E1 = 1.20–1.40 mm), designed for automated placement and reflow compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitting terminal for majority carriers	Low-impedance return path; connects to ground or low-side reference in gate drive circuits
2 (Base)	Control electrode for carrier injection	Receives TTL/CMOS-compatible drive; requires ~30 mA for full saturation at 1.5 A I_C
3 (Collector)	Current collection node	Connects to switched load (e.g., MOSFET gate, LED anode); withstands 130 V transient spikes

Key Features

Feature	Design Value
High peak current capability	6 A pulsed (ICM) - enables short-duration surge handling in motor gate drive or LED flash circuits
Low saturation voltage	V_CE(sat) ≤ 85 mV @ 1 A - reduces conduction loss and self-heating during active switching
130 V forward blocking	BV_CEX = 130 V - allows safe operation across inductive loads without snubber networks
6 V reverse blocking	BV_ECO = 6 V - defines maximum allowable reverse bias between emitter and collector in bidirectional configurations
High f_T	190 MHz - supports clean edge fidelity in fast-switching applications up to ~10–20 MHz

Applications

MOSFET Gate Driving

DC-DC Converter Switching

Use Scenario: Driving the gate of a 100 V N-channel MOSFET in a half-bridge LLC resonant converter.

IC Role / Device Role / Timing Role: NPN switch providing low-impedance pull-down path during dead-time, leveraging 130 V BV_CEX to survive V_DS overshoot.

Use Value: Eliminates need for external clamping diodes due to inherent 130 V forward blocking margin.

Use Scenario: Active clamp reset switch in an isolated flyback controller with 48 V input.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier control transistor, operating at 250 kHz with 1.5 A peak current.

Use Value: 85 mV V_CE(sat) minimizes conduction loss, improving efficiency by ≥0.4% over standard 200 mV alternatives.

LED Constant-Current Switching

Low-Voltage Interface Translation

Use Scenario: High-brightness LED string switching in automotive interior lighting (12 V system).

IC Role / Device Role / Timing Role: Fast-turn-on/off current switch controlling 1 A LED pulses with 100 µs duty cycle.

Use Value: 108 ns rise time and 130 ns fall time ensure precise PWM dimming without trailing edge distortion.

Use Scenario: Level-shifting interface between 3.3 V microcontroller GPIO and 24 V industrial sensor input.

IC Role / Device Role / Timing Role: Open-collector translator with base driven by MCU, collector pulled to 24 V via 10 kΩ.

Use Value: 7 V VEBO rating permits direct connection to 3.3 V logic without series resistor, simplifying BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXTN25040DFTA	Same die, tape-and-reel variant with 10,000 pcs/reel (vs. 3,000 pcs for DFLTA); identical electrical specs	No functional difference; suited for high-volume production runs	Select DFTA for volume procurement; DFLTA preferred for prototyping and low-MOQ orders
MMBT4401LT1G	Lower BV_CEO = 40 V (same), but BV_CEX = 60 V only; h_FE = 100 min @ 150 mA; V_CE(sat) = 750 mV @ 150 mA	Not suitable for 130 V transient suppression; limited to low-voltage, low-current switching	Use only where 60 V blocking suffices and peak current ≤ 0.3 A

Compared with ZXTN25040DFLTA, ZXTN25040DFTA offers identical performance in higher-reel packaging, while MMBT4401LT1G lacks the critical 130 V forward blocking and high-current saturation capability-making it unsuitable for gate driving or high-voltage DC-DC use cases.

Availability

ZXTN25040DFLTA is available at Aetrix Electronics and suitable for MOSFET gate driving, DC-DC conversion, LED driving, and low-voltage interface translation requiring stable component supply and SOT23 footprint consistency.

Supply support for ZXTN25040DFLTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its legacy of high-performance discrete semiconductors focused on power efficiency and reliability.

This transistor belongs to Zetex's "ZXTN" ultra-low-saturation-voltage NPN series, engineered specifically for high-speed, high-pulse-current switching in space-constrained power management and interface circuits.

FAQ

What is the maximum safe operating voltage across collector and emitter with base open?

The ZXTN25040DFLTA has a guaranteed BV_CEO of 40 V minimum under pulsed conditions (300 µs, 2% duty cycle). Continuous operation above 40 V with base open violates absolute maximum ratings and risks permanent breakdown-even though BV_CEX reaches 130 V only when base is actively biased or terminated with ≤1 kΩ.

Can this transistor replace a MOSFET in low-side switching applications?

No-it is not a drop-in MOSFET replacement. As a bipolar transistor, it requires sustained base current (e.g., 100 mA for 1 A I_C) and exhibits higher conduction loss than modern logic-level MOSFETs. Use only where BJT characteristics-like precise current gain control or inherent avalanche tolerance-are explicitly required.

Is the SOT23 package lead-free and RoHS compliant?

Yes. Per Zetex's green compliance statement, all ZXTN25040DFLTA units meet EU RoHS Directive 2011/65/EU requirements, with no intentionally added lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE. The SOT23 package uses matte tin lead finish compatible with standard Pb-free reflow profiles.

Does the 6 A peak pulse rating apply to repetitive or single-event conditions?

The 6 A I_CM rating is specified for non-repetitive, short-duration pulses (typical test: 10 ms or less, duty cycle <1%). Repetitive operation above 1.5 A continuous must follow derating curves in the datasheet-especially considering R_JA = 357 °C/W and ambient temperature constraints-to avoid junction overheating beyond 150 °C.

ZXTN25040DFLTA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 285mV @ 400mA, 4A

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 10mA, 2V

Power - Max:: 350 mW

Frequency - Transition:: 190MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

ZXTN25040DFLTA FAQ

1.How can I place an order for ZXTN25040DFLTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTN25040DFLTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTN25040DFLTA reliable?

The price and inventory of ZXTN25040DFLTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN25040DFLTA is usually 5 days.

3.What payment methods are accepted for ZXTN25040DFLTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN25040DFLTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTN25040DFLTA?

ZXTN25040DFLTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTN25040DFLTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTN25040DFLTA?

For technical support, including ZXTN25040DFLTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN25040DFLTA requirements.

6.How does Aetrix verify that ZXTN25040DFLTA is sourced from the original manufacturer or authorized distributors?

All ZXTN25040DFLTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN25040DFLTA meets industry standards.

7.What is the process for return or replacement of ZXTN25040DFLTA?

All ZXTN25040DFLTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN25040DFLTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTN25040DFLTA part is unused and in its original packaging.

Return procedure for ZXTN25040DFLTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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