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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated ZXTN25050DFHTA

Name: ZXTN25050DFHTA
Brand: Diodes Incorporated
SKU: ZXTN25050DFHTA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXTN25050DFHTA

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: ZXTN25050DFHTA.pdf

Description:: TRANS NPN 50V 4A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ZXTN25050DFHTA from Diodes Incorporated is a 50V NPN low-saturation transistor in SOT23 package, rated for 4A continuous collector current and delivering V_CE(sat) ≤ 60 mV at 1A/100mA drive. It features BV_CEO = 50 V, f_T = 200 MHz, and is optimized for high-efficiency switching in power conversion stages such as DC-DC converters and MOSFET gate drivers.

For engineers reviewing the ZXTN25050DFHTA datasheet, ZXTN25050DFHTA pinout, ZXTN25050DFHTA application, or ZXTN25050DFHTA equivalent, key selection criteria include saturation voltage at high current, thermal resistance (R_θJA = 69–171 °C/W depending on PCB layout), peak current capability (I_CM = 10 A), and AEC-Q101 readiness for automotive-grade reliability.

Technical Context

This NPN bipolar junction transistor uses epitaxial planar die construction to achieve high gain stability across current ranges (h_FE = 20–900) and low V_CE(sat) under heavy conduction. Its 150 V V_CBO and 5 V V_ECO support robust blocking in both forward and reverse configurations during switching transients.

The device operates across –55°C to +150°C with R_θJC = 13 °C/W, enabling direct thermal coupling to PCB copper when mounted per recommended pad layout. Switching performance is characterized by t_d = 65 ns, t_r = 111 ns, t_s = 429 ns, and t_f = 140 ns under 10V/1A conditions - suitable for medium-frequency (<500 kHz) hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage in active switching mode
I_C (continuous)	4 A - Sustained current handling without derating at T_A ≤ 25°C on 50 mm × 50 mm 2 oz Cu PCB
V_CE(sat)	≤ 60 mV @ I_C = 1 A, I_B = 100 mA - Enables <0.06 W conduction loss at 1 A
f_T	200 MHz - Supports stable small-signal amplification and fast switching up to ~50 MHz practical bandwidth
R_θJA	69 °C/W - Achievable with 50 mm × 50 mm 2 oz Cu PCB; enables 1.81 W dissipation before T_J exceeds 150°C
h_FE	20–900 - Wide gain range supports both linear biasing and saturated switch operation
t_s + t_f	569 ns - Total storage + fall time determines minimum off-time in PWM control

Pinout & Package

Package: SOT23 - Surface-mount plastic package with matte tin-plated leads, moisture sensitivity level 1, weight ≈ 0.008 g.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	E	Current sink node; connected to ground or low-side return path in switch configurations
2 (Base)	B	Control input requiring ~400 mA drive for full saturation at 4 A collector current
3 (Collector)	C	High-side current source node; connects to load or switching node in DC-DC topologies

Key Features

Feature	Design Value
Low V_CE(sat)	≤60 mV @ 1A ensures <60 mW conduction loss - critical for thermally constrained DC-DC modules
High peak current rating	I_CM = 10 A supports short-duration surge loads in motor startup or fault recovery
Thermal performance	R_θJC = 13 °C/W allows direct heat transfer to PCB copper - simplifies thermal design vs. TO-236 alternatives
AEC-Q101 readiness	Qualified for automotive applications with PPAP capability and IATF 16949 manufacturing - no additional qualification needed for Tier-1 designs
Green packaging	Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm) meets global environmental compliance mandates

Applications

DC-DC Converters

DC Fans

Use Scenario: High-efficiency synchronous buck converter output stage with 12 V input and 3.3 V/3 A output.

IC Role / Device Role / Timing Role: Low-side NPN switch replacing P-channel MOSFET where gate drive simplicity and cost are prioritized over ultra-low R_DS(on).

Use Value: V_CE(sat) ≤ 60 mV reduces conduction loss to <180 mW at 3 A - improves efficiency by ~1.2% vs. standard BJT alternatives.

Use Scenario: Speed-controlled 24 V brushless DC fan driver with PWM-based current limiting.

IC Role / Device Role / Timing Role: Current-switching element in emitter-follower configuration driving fan winding directly.

Use Value: 4 A continuous rating handles 2.5 A stall current; 10 A peak rating absorbs startup surges without thermal shutdown.

Power Switches

MOSFET Gate Drivers

Use Scenario: 48 V industrial power distribution module with local load switching and overcurrent protection.

IC Role / Device Role / Timing Role: Main series pass transistor controlled via microcontroller GPIO through base resistor network.

Use Value: BV_CEO = 50 V provides 2 V margin above 48 V rail; 150 V V_CBO withstands inductive kickback from solenoid loads.

Use Scenario: High-speed N-channel MOSFET driver stage in half-bridge motor controller.

IC Role / Device Role / Timing Role: Active pull-down transistor rapidly discharging gate capacitance during turn-off.

Use Value: t_f = 140 ns and t_s = 429 ns enable <600 ns total discharge - supports >1 MHz PWM frequencies with minimal shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-saturation transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXTN25040DFHTA	Lower V_CEO = 40 V; same SOT23 package and 4 A I_C	Not suitable for 48 V systems; acceptable for 24 V or lower rails	Select only if system max voltage ≤ 36 V and cost reduction is primary goal
DMT3005LPSQ-13	50 V, 5 A, DFN2020 package; MOSFET not BJT - zero gate current, higher R_DS(on)	Requires gate driver; better for high-frequency (>1 MHz) but less tolerant of Miller-induced oscillation	Prefer for space-constrained layouts needing <1.5 mm² footprint; avoid if base-drive simplicity is required

Compared with ZXTN25040DFHTA and DMT3005LPSQ-13, ZXTN25050DFHTA uniquely balances 50 V blocking, 4 A current, and BJT-level drive simplicity in SOT23 - making it optimal for cost-sensitive, thermally constrained 48 V power switches where gate driver ICs are undesirable.

Availability

ZXTN25050DFHTA is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and MOSFET gate drivers requiring stable component supply and automotive-grade reliability assurance.

Supply support for ZXTN25050DFHTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

ZXTN25050DFHTA belongs to Diodes' ZXT series of high-current, low-V_CE(sat) transistors designed specifically for compact, high-efficiency power switching in automotive, industrial, and computing applications.

FAQ

What is the maximum allowable base current for ZXTN25050DFHTA?

The absolute maximum base current is 1 A per Absolute Maximum Ratings table. For reliable 4 A collector conduction, IB = 400 mA is specified in electrical characteristics (V_CE(sat) test condition). Exceeding 1 A risks metallization failure or bond wire lift; sustained operation above 500 mA requires thermal derating per R_θJA curves.

Is ZXTN25050DFHTA qualified to AEC-Q101?

Yes - Diodes Incorporated explicitly states this part is qualified for automotive applications requiring AEC-Q101, PPAP capability, and manufacturing in IATF 16949 certified facilities. Full qualification documentation is available upon request from Diodes' automotive support team.

Can ZXTN25050DFHTA replace a MOSFET in a gate driver circuit?

Yes, as an active pull-down element - its 140 ns fall time and 429 ns storage time enable fast gate discharge. However, unlike MOSFETs, it draws continuous base current during on-state; ensure driver GPIO or buffer can source ≥400 mA without voltage droop or thermal overload.

What PCB layout practices maximize thermal performance?

Use the recommended SOT23 pad layout (C = 2.0 mm × 0.8 mm, X1 = 1.35 mm) with ≥2 oz copper on a 50 mm × 50 mm area. Connect the collector pad directly to internal or external ground/power planes using ≥4 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) to achieve R_θJA = 69 °C/W as specified in Note 8.

ZXTN25050DFHTA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 210mV @ 400mA, 4A

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 10mA, 2V

Power - Max:: 1.25 W

Frequency - Transition:: 200MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

ZXTN25050DFHTA FAQ

1.How can I place an order for ZXTN25050DFHTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTN25050DFHTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTN25050DFHTA reliable?

The price and inventory of ZXTN25050DFHTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN25050DFHTA is usually 5 days.

3.What payment methods are accepted for ZXTN25050DFHTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN25050DFHTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTN25050DFHTA?

ZXTN25050DFHTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTN25050DFHTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTN25050DFHTA?

For technical support, including ZXTN25050DFHTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN25050DFHTA requirements.

6.How does Aetrix verify that ZXTN25050DFHTA is sourced from the original manufacturer or authorized distributors?

All ZXTN25050DFHTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN25050DFHTA meets industry standards.

7.What is the process for return or replacement of ZXTN25050DFHTA?

All ZXTN25050DFHTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN25050DFHTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTN25050DFHTA part is unused and in its original packaging.

Return procedure for ZXTN25050DFHTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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