Diodes Incorporated ZXTN25100DGQTA

Overview

ZXTN25100DGQTA from Diodes Incorporated is a 100V NPN high-gain bipolar junction transistor in SOT223 package, rated for 3A continuous collector current, with V_CE(sat) < 100 mV at 1 A and DC current gain (h_FE) up to 900 at 10 mA. It serves as a high-voltage switching element in PSU start-up circuits, motor drive stages, and relay/solenoid drivers.

For engineers reviewing the ZXTN25100DGQTA datasheet, ZXTN25100DGQTA pinout, ZXTN25100DGQTA application, or ZXTN25100DGQTA equivalent, key selection criteria include its 180 V BV_CEX, AEC-Q101 qualification, low R_CE(sat) of 85 mΩ, thermal resistance of 23.5 °C/W on 50 mm × 50 mm 2 oz copper, and complementary PNP pairing with ZXTP19100CG.

Technical Context

This NPN transistor operates in linear and saturated switching modes, with guaranteed breakdown voltages of BV_CEX > 180 V and BV_CEO = 100 V, enabling robust operation in high-voltage DC-DC converters and industrial control interfaces. Its f_T of 175 MHz supports fast switching transitions.

The device features low base-emitter turn-on voltage (V_BE(on) = 905–1000 mV at I_C = 3 A), tight saturation voltage distribution (80–100 mV at I_C = 1 A / I_B = 100 mA), and ESD robustness (4 kV HBM), making it suitable for automotive-grade power interface designs requiring stable gain across –55°C to +150°C.

Key Specifications

Pinout & Package

Package: SOT223 - Surface-mount plastic package with exposed collector tab for enhanced thermal conduction; 0.112 g mass; UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Compared with STP16NF10 and ZXTP19100CG, ZXTN25100DGQTA offers direct TTL/CMOS-compatible base drive, lower gate charge overhead than MOSFETs, and guaranteed AEC-Q101 compliance without external driver circuitry-making it optimal for cost-sensitive, space-constrained automotive interface nodes.

Availability

ZXTN25100DGQTA is available at Aetrix Electronics and suitable for automotive power interface design, industrial motor control, and high-reliability DC-DC converter development requiring stable component supply and PPAP-capable traceability.

Supply support for ZXTN25100DGQTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

ZXTN25100DGQTA belongs to Diodes' high-voltage bipolar transistor product line, engineered for automotive and industrial applications demanding ruggedness, AEC-Q101 qualification, and consistent parametric performance across extended temperature ranges.

FAQ

What is the maximum allowable base current for ZXTN25100DGQTA?

The absolute maximum base current is 1 A, as specified in the Absolute Maximum Ratings table. Exceeding this risks metallization failure or bond wire damage. For reliable 3 A collector operation, typical base drive is 600 mA (I_C/I_B = 5), verified by V_CE(sat) = 200–500 mV data at that condition.

Is ZXTN25100DGQTA pin-compatible with other SOT223 NPN transistors?

No universal pin compatibility exists across SOT223 NPN transistors. ZXTN25100DGQTA uses Collector–Emitter–Base pinout (Pin 1 = C, Pin 2 = E, Pin 3 = B, Tab = C). Substitution requires verifying both pin assignment and electrical parameters-not just package outline-as mismatched pinouts risk circuit damage.

How does the 85 mΩ R_CE(sat) value translate to real-world power loss?

At 1 A collector current, R_CE(sat) = 85 mΩ yields 85 mW conduction loss (P = I²R). At 3 A, loss rises to 765 mW. This directly impacts thermal design: on a 50 mm × 50 mm 2 oz copper pad, that corresponds to ~18°C junction-to-ambient rise, well within the 150°C max rating at 25°C ambient.

Can ZXTN25100DGQTA replace a MOSFET in low-side switching applications?

Yes, but with trade-offs: it delivers lower gate drive complexity (no gate driver needed) and better surge tolerance, yet exhibits higher conduction loss than equivalently rated MOSFETs due to V_CE(sat) vs. R_DS(on). Use it where simplicity, cost, and ruggedness outweigh efficiency-e.g., infrequent-switching solenoid drivers rather than high-frequency synchronous rectifiers.