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Diodes Incorporated ZXTN26020DMFTA

Part No.:
ZXTN26020DMFTA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
3-UDFN
Datasheet:
AetrixZXTN26020DMFTA.pdf
Description:
TRANS NPN 20V 1.5A DFN1411-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,800

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Product details

Overview

ZXTN26020DMFTA from Diodes Incorporated is a high-gain, low-VCE(SAT) NPN bipolar transistor in a DFN1411-3 package, rated for 1.5A continuous collector current, 20V VCEO, and qualified to AEC-Q101 for automotive reliability. It delivers RCE(SAT) = 90 mΩ at IC = 1A/ IB = 50mA and supports fast switching with ton = 60 ns, toff = 225 ns - used in MOSFET/IGBT gate driving and DC-DC converter output stages.

For engineers reviewing the ZXTN26020DMFTA datasheet, ZXTN26020DMFTA pinout, ZXTN26020DMFTA application, or ZXTN26020DMFTA equivalent, key selection criteria include verified low saturation voltage under high-current drive, AEC-Q101 qualification status, thermal resistance (RθJA = 330 °C/W on minimal pad layout), and DFN1411-3 footprint compatibility with space-constrained power interface designs.

Technical Context

This NPN transistor operates as a high-efficiency, low-loss switch in medium-power linear and switching applications. Its hFE = 200–1000 (at IC = 100mA–2A) enables robust base drive margin, while fT = 260 MHz supports stable operation up to high-frequency switching nodes.

The device uses a planar epitaxial structure with NiPdAu-plated copper lead frame and green molding compound (UL 94V-0). Thermal performance is defined for two PCB mounting conditions: 1"² pads (RθJA = 125 °C/W) and minimum recommended layout (RθJA = 330 °C/W), directly impacting derating in compact DC-DC modules.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 20 V - Maximum safe collector-emitter blocking voltage in common-emitter configuration, suitable for 12V rail switching.
IC (continuous) 1.5 A - Sustained load current capability without thermal shutdown on standard FR-4 with minimal pad layout.
VCE(SAT) 125 mV @ IC = 1A, IB = 50mA - Low conduction loss enabling <0.125 W dissipation per switch event at rated current.
RCE(SAT) 90 mΩ - Equivalent on-resistance derived from VCE(SAT)/IC, critical for calculating I²R losses in gate-drive paths.
fT 260 MHz - Gain-bandwidth product confirming usable frequency range up to ~100 MHz for fast turn-on/turn-off control.
toff 225 ns - Total turn-off time including 205 ns storage delay, limiting maximum practical switching frequency to ≤2 MHz in hard-switched topologies.
AEC-Q101 Qualified - Validated for automotive-grade temperature cycling, humidity, and mechanical stress per JESD22 standards.

Pinout & Package

Package: DFN1411-3 (1.4 mm × 1.1 mm × 0.5 mm), molded plastic with NiPdAu-plated copper lead frame, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Current sink terminal Connected to ground or low-side return path; lowest impedance node for heat extraction via exposed pad (if present).
2 (Base) Control input Receives current-limited drive signal; requires ≥50 mA for full saturation at 1A collector load.
3 (Collector) Current source terminal Switches positive rail to load; must withstand 20V transient spikes in inductive gate-drive applications.

Key Features

Feature Design Value
Ultra-low VCE(SAT) 125 mV at 1A enables <0.13 W conduction loss - reduces thermal load in space-constrained gate drivers.
AEC-Q101 qualification Validated for automotive under-hood environments (-55°C to +150°C), supporting extended temperature reliability without derating.
DFN1411-3 footprint 1.4 mm × 1.1 mm body size allows placement adjacent to power MOSFETs in half-bridge layouts with minimal PCB area.
High hFE consistency hFE ≥ 200 at IC = 2A ensures stable saturation across production lots and temperature extremes.
Green RoHS compliance Lead-, halogen-, and antimony-free construction meets EU Directive 2011/65/EU and automotive ELV requirements.

Applications

MOSFET Gate Driving DC-DC Converter Output Stage

Use Scenario: Driving the gate of a 30V N-channel MOSFET in a synchronous buck converter's high-side position.

IC Role / Device Role / Timing Role: NPN switch providing fast, low-loss pull-down path during MOSFET turn-off to minimize shoot-through risk.

Use Value: 225 ns toff and 90 mΩ RCE(SAT) reduce gate discharge time and resistive loss, improving efficiency by ~0.4% at 1A load.

Use Scenario: Active clamping circuit in a flyback converter's secondary-side synchronous rectification stage.

IC Role / Device Role / Timing Role: Low-VCE(SAT) NPN switch replacing Schottky diode to reduce forward voltage drop and conduction loss.

Use Value: 125 mV VCE(SAT) at 1A cuts conduction loss by 55% versus 0.5V Schottky, lowering secondary-side temperature rise by 8°C.

Low-Voltage Interface Translation LED Constant-Current Switching

Use Scenario: Level-shifting logic signals from 3.3V microcontroller outputs to drive 12V solenoid loads.

IC Role / Device Role / Timing Role: Medium-current NPN buffer isolating MCU GPIO from inductive back-EMF and providing gain for reliable saturation.

Use Value: hFE ≥ 200 at IC = 1A ensures full saturation with only 5 mA base drive, reducing MCU I/O loading.

Use Scenario: PWM-controlled current switch for high-brightness LED strings in automotive interior lighting.

IC Role / Device Role / Timing Role: Fast-switching NPN transistor modulating LED current at 1–5 kHz with minimal dead-time distortion.

Use Value: 60 ns ton and 20 ns td preserve PWM duty cycle fidelity, maintaining consistent luminance across dimming range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ZXTN25020DFH Same DFN1411-3 package, but lower IC = 1.0A and higher VCE(SAT) = 175 mV @ 1A. Not suitable for 1.5A gate-drive loads; acceptable only in low-current LED or logic interface roles. Select only when thermal budget permits higher conduction loss and peak current demand is ≤1.0A.
DMT3005LPS-7 30V P-channel MOSFET in SOT-23; RDS(on) = 45 mΩ @ VGS = –4.5V, no base drive required. Requires negative gate bias; unsuitable for direct TTL/CMOS drive without level shifter; better for high-side switching. Prefer for high-side loads where gate drive voltage exceeds 4.5V; avoid if MCU lacks dedicated high-side driver or charge pump.

Compared with ZXTN25020DFH and DMT3005LPS-7, ZXTN26020DMFTA uniquely balances 1.5A current handling, ultra-low 125 mV saturation voltage, and TTL-compatible base drive - making it optimal for compact, thermally constrained NPN switching where discrete BJT advantages (no gate capacitance, predictable hFE) outweigh MOSFET trade-offs.

Availability

ZXTN26020DMFTA is available at Aetrix Electronics and suitable for MOSFET gate driving, DC-DC converter output stages, and low-voltage interface translation requiring stable component supply and AEC-Q101-compliant reliability.

Supply support for ZXTN26020DMFTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

ZXTN26020DMFTA belongs to Diodes' ZXT series of high-performance bipolar transistors designed specifically for demanding power interface and switching applications where low saturation voltage, fast switching, and automotive qualification are essential.

FAQ

What is the maximum allowable junction temperature for ZXTN26020DMFTA?

The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent degradation of hFE and increased leakage. Derating is required above +25°C ambient based on RθJA = 330 °C/W for minimal pad layout - e.g., at +85°C ambient, max continuous power drops to 195 mW.

Does ZXTN26020DMFTA require a base resistor in all applications?

Yes - a series base resistor is mandatory to limit IB and ensure saturation without exceeding the 0.5A maximum base current rating. For 1A collector load and hFE = 200, minimum IB = 5 mA; with 3.3V drive, a 620 Ω resistor sets IB ≈ 5.3 mA, satisfying both saturation and safety margins.

Can ZXTN26020DMFTA be used in linear amplifier configurations?

No - it is optimized for switching operation, not linear amplification. The datasheet provides no small-signal parameters (e.g., rπ, gm) or linearity specifications. Its high hFE variation across IC and strong thermal dependence make it unsuitable for stable analog gain stages.

Is the DFN1411-3 package thermally enhanced with an exposed pad?

No - the DFN1411-3 package for ZXTN26020DMFTA has no exposed thermal pad. Thermal dissipation relies solely on the three soldered terminals and PCB copper area. The 330 °C/W RθJA value assumes minimal recommended pad layout per Figure 5 in DS31953 Rev. 2, not thermal vias or heatsinking.

ZXTN26020DMFTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-UDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1.5 A
Voltage - Collector Emitter Breakdown (Max):
20 V
Vce Saturation (Max) @ Ib, Ic:
290mV @ 40mA, 2A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
290 @ 500mA, 2V
Power - Max:
1 W
Frequency - Transition:
260MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1411-3

ZXTN26020DMFTA FAQ

1.How can I place an order for ZXTN26020DMFTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTN26020DMFTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTN26020DMFTA reliable?

The price and inventory of ZXTN26020DMFTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN26020DMFTA is usually 5 days.

3.What payment methods are accepted for ZXTN26020DMFTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN26020DMFTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTN26020DMFTA?

ZXTN26020DMFTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTN26020DMFTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTN26020DMFTA?

For technical support, including ZXTN26020DMFTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN26020DMFTA requirements.

6.How does Aetrix verify that ZXTN26020DMFTA is sourced from the original manufacturer or authorized distributors?

All ZXTN26020DMFTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN26020DMFTA meets industry standards.

7.What is the process for return or replacement of ZXTN26020DMFTA?

All ZXTN26020DMFTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN26020DMFTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTN26020DMFTA part is unused and in its original packaging.

Return procedure for ZXTN26020DMFTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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