Diodes Incorporated ZXTN618MATA

Overview

ZXTN618MATA from Diodes Incorporated is a 20V NPN low-saturation transistor in DFN2020B-3 package, designed for high-current switching with 4.5A continuous collector current, 150mV max V_CE(sat) at 1A, and 47mΩ equivalent on-resistance. It serves as a power switch in DC-DC converters and motor control circuits where thermal efficiency and thin-profile packaging are critical.

For engineers reviewing the ZXTN618MATA datasheet, ZXTN618MATA pinout, ZXTN618MATA application, or ZXTN618MATA equivalent, key selection criteria include its AEC-Q101 qualification, 0.6mm profile, R_θJA = 51°C/W (high-copper board), and h_FE ≥ 180 at 4.5A - all verified per DS31890 Rev. 5–2.

Technical Context

This NPN transistor operates with a minimum BV_CEO of 20V and supports pulsed peak currents up to 12A. Its gain remains stable across temperature (−55°C to +150°C) with h_FE = 360 typ. at 2A and 25°C, dropping to 180 min. at 4.5A - enabling predictable drive capability in high-current saturation mode.

V_CE(sat) is specified under pulsed conditions (≤300µs, ≤2% duty cycle) at multiple I_C/I_B ratios: 15mV typical at 0.1A/10mA, rising to 250mV max at 4.5A/125mA. Base-emitter saturation voltage is tightly controlled at 0.98–1.07V under full-load conditions.

Key Specifications

Pinout & Package

DFN2020B-3 is a 3-terminal, bottom-exposed-pad surface-mount package with no internal die attach wire; the exposed collector pad provides primary thermal path to PCB. Pin 1 (Emitter), Pin 2 (Base), Pin 3 (Collector) are arranged linearly along one edge; Collector connects directly to the thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-saturation transistor applications.

Compared with ZXTN2012ZTA and DMT3006LPSQ-13, ZXTN618MATA delivers superior current handling (4.5A) and thermal performance (51°C/W) in the same compact DFN2020B-3 form factor - making it optimal for space- and power-constrained 20V-class switching applications.

Availability

ZXTN618MATA is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and battery charging circuits requiring stable component supply, AEC-Q101 compliance, and high-current low-saturation performance.

Supply support for ZXTN618MATA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions.

ZXTN618MATA belongs to Diodes' ZXT series of low-saturation transistors, engineered specifically for high-efficiency switching in automotive, industrial, and portable power applications where thermal density and thinness are design constraints.

FAQ

What is the maximum continuous collector current for ZXTN618MATA under standard PCB conditions?

The ZXTN618MATA supports 4.5A continuous collector current when mounted on a 31mm × 31mm FR4 PCB with full 1oz copper coverage on one side and still-air conditions. This rating assumes the exposed collector pad is fully soldered to the copper pour for optimal thermal conduction.

Is ZXTN618MATA suitable for automotive applications?

Yes - ZXTN618MATA is qualified to AEC-Q101 standards, covering stress tests including temperature cycling, high-temperature reverse bias, and unbiased highly accelerated stress testing. Its operating range (−55°C to +150°C) and robust parametric stability meet automotive under-hood requirements.

How does the DFN2020B-3 package improve thermal performance over SOT-23?

The DFN2020B-3 package achieves R_θJA = 51°C/W - 60% lower than typical SOT-23 - by using an exposed collector pad that forms a direct thermal path to the PCB. Its 4mm² footprint also reduces board area by 50%, while maintaining mechanical robustness and lead-free RoHS compliance.

What is the typical V_CE(sat) at 4.5A, and what base current is required?

At I_C = 4.5A, V_CE(sat) is 250mV maximum (tested at I_B = 125mA, pulse conditions). The datasheet specifies V_BE(sat) = 0.98–1.07V under this condition, confirming reliable saturation with 125mA base drive - corresponding to h_FE ≈ 36 at full load.