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Diodes Incorporated ZXTN619MATA

Part No.:
ZXTN619MATA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
3-UDFN
Datasheet:
AetrixZXTN619MATA.pdf
Description:
TRANS NPN 50V 4A DFN2020B-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:363,959

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Product details

Overview

ZXTN619MATA from Diodes Incorporated is a 50V NPN low-saturation transistor in U-DFN2020-3 package, designed for high-current switching in power stages. It delivers 4A continuous collector current, achieves ≤100mV VCE(sat) at 1A, exhibits 68mΩ equivalent on-resistance, and maintains hFE ≥200 up to 6A - enabling efficient MOSFET gate driving and DC-DC converter primary-side switching.

For engineers reviewing the ZXTN619MATA datasheet, ZXTN619MATA pinout, ZXTN619MATA application, or ZXTN619MATA equivalent, key selection criteria include its 50V VCEO, 0.6mm profile, 83°C/W RθJA (on 10cm² 1oz Cu), JEDEC-qualified reliability, and automotive-grade Q-suffix variants for AEC-Q101-compliant designs.

Technical Context

This NPN bipolar junction transistor operates as a high-efficiency, low-VCE(sat) switch in saturated mode, with BVCEO = 50V and IC = 4A continuous rating. Its hFE is specified from 10mA to 6A, supporting stable gain across wide load ranges in motor control and charging circuits.

The U-DFN2020-3 (Type B) package integrates an exposed collector pad for thermal conduction, achieving RθJL = 16.8°C/W and 60% lower RθJA than SOT23. ESD ratings meet HBM 4kV, MM 400V, and CDM 1kV per JEDEC standards.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50V - supports 24V/36V industrial and automotive power rails with margin.
IC (continuous) 4A - enables direct drive of medium-power MOSFET gates or small motors without external buffering.
VCE(sat) max 100mV @ 1A - reduces conduction loss to <100mW, critical for thermally constrained thin applications.
RSAT 68mΩ - quantifies effective on-resistance for loss modeling in switching node calculations.
hFE 200–450 @ IC = 10mA–6A - ensures reliable base drive design across full operating range.
fT 100–165MHz - supports fast switching in DC-DC converters up to ~500kHz with minimal delay.
RθJA 83°C/W (on 10cm² 1oz Cu) - enables 1.5W dissipation at +25°C ambient without forced cooling.

Pinout & Package

Package: U-DFN2020-3 (Type B), 2.0 × 2.0 × 0.6 mm, exposed collector pad on bottom surface, NiPdAu-plated terminals, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Top Marking "SC") Emitter Reference terminal for base-emitter bias; connected to ground or low-side return path.
Pin 2 Base Current-controlled input; requires 200mA drive for 4A collector switching under saturation.
Pin 3 (Exposed Pad) Collector Primary power terminal and thermal interface; must be soldered to ≥10cm² copper for rated PD.

Key Features

Feature Design Value
Low saturation voltage VCE(sat) ≤100mV @ 1A - cuts conduction loss by >50% vs. standard SOT23 transistors at same current.
High current gain at full load hFE ≥200 @ IC = 6A - allows simplified base drive circuitry without Darlington staging.
Thermal efficiency RθJA = 83°C/W - enables 1.5W operation on minimal PCB copper, reducing heatsink dependency.
Space-constrained footprint 4mm² area, 50% smaller than SOT23 - fits dense power management layouts in portable and automotive ECUs.
JEDEC-qualified reliability Qualified to AEC-Q101 stress test conditions - supports production use in automotive power modules.

Applications

MOSFET Gate Driving DC-DC Converter Switching

Use Scenario: Driving the gate of a 30V/50A N-channel MOSFET in a synchronous buck converter.

IC Role / Device Role / Timing Role: High-current NPN switch providing rapid turn-on pulse with low VCE(sat) to minimize Miller plateau time.

Use Value: 100mV saturation drop ensures <100mW loss during gate charge, improving efficiency and thermal margin.

Use Scenario: Low-side switch in 12V-to-5V non-synchronous buck regulator for infotainment subsystems.

IC Role / Device Role / Timing Role: Primary power switch handling peak currents up to 4A at 250kHz switching frequency.

Use Value: 165MHz fT and 750ns toff support clean transitions with minimal switching loss.

Charging Circuit Control Motor Control Interface

Use Scenario: Enabling/disabling battery charging path in USB-C PD power banks with 20V input.

IC Role / Device Role / Timing Role: High-side or low-side enable switch controlling charging FET gate or current sense path.

Use Value: 50V VCEO accommodates 20V input with 2.5× safety margin; 4A rating covers 10W+ charging loads.

Use Scenario: Directional control and current limiting in 24V brushed DC motor drivers for HVAC actuators.

IC Role / Device Role / Timing Role: Current-sense amplifier front-end switch or H-bridge half-bridge driver stage.

Use Value: Stable hFE up to 6A ensures predictable base drive across motor stall and dynamic load conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-saturation transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ZXTN618MATA VCEO = 40V, VCE(sat) = 120mV @ 1A, hFE = 150–350 @ 6A Limited to ≤36V systems; higher saturation loss reduces efficiency in high-duty-cycle apps. Select when 40V rating suffices and cost sensitivity outweighs thermal performance.
DMT6009LPS-13 N-channel MOSFET (60V, 9.5mΩ, SO-8), gate threshold 1–2.5V, no base current required Zero gate drive current, lower RDS(on), but larger footprint and higher gate charge vs. BJT simplicity. Prefer for ultra-low-loss, high-frequency (>1MHz) switching where gate drive complexity is acceptable.

Compared with ZXTN618MATA, ZXTN619MATA offers +10V breakdown margin and 20mV lower VCE(sat); versus DMT6009LPS-13, it provides smaller size and simpler drive but trades off conduction efficiency above 2A.

Availability

ZXTN619MATA is available at Aetrix Electronics and suitable for MOSFET gate driving, DC-DC converters, and motor controls requiring stable component supply, JEDEC-qualified reliability, and compact thermal management.

Supply support for ZXTN619MATA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

ZXTN619MATA belongs to Diodes' ZXT series of low-saturation BJTs, engineered specifically for space- and thermally constrained power switching in automotive, industrial, and portable electronics.

FAQ

What is the maximum safe operating temperature for ZXTN619MATA?

The ZXTN619MATA has a junction temperature limit of +150°C and storage range of −55°C to +150°C. With RθJA = 83°C/W on 10cm² 1oz Cu, it sustains 1.5W dissipation at +25°C ambient. Derating begins linearly above +25°C at 12mW/°C, reaching zero power at +150°C case temperature.

Is ZXTN619MATA suitable for automotive applications?

Yes - the ZXTN619MATA is JEDEC-qualified and compatible with AEC-Q101 stress testing. Diodes offers automotive-grade variants (e.g., ZXTN619MAQ) manufactured in IATF 16949-certified facilities, PPAP-capable, and qualified to AEC-Q101 Rev G for under-hood and body-control module use.

How should the exposed collector pad be soldered for thermal performance?

The exposed collector pad (Pin 3) must be fully soldered to ≥10cm² of 1oz copper on a single-sided FR-4 PCB for rated RθJA = 83°C/W. Use a 2×2 array of thermal vias (0.3mm diameter, 0.6mm pitch) connecting to internal or backside ground planes to improve heat spreading and reduce RθJA to ~51°C/W.

Does ZXTN619MATA require a base resistor, and how is it calculated?

Yes - a base resistor limits IB to prevent overdrive and ensure saturation. For 4A IC and hFE(min) = 200, minimum IB = 20mA. With VBE(sat) ≈ 1.07V and 3.3V logic drive, RB = (3.3V − 1.07V)/20mA = 112Ω. Use 100Ω ±5% for margin, verified via VCE(sat) measurement at full load.

ZXTN619MATA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-UDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
320mV @ 200mA, 4A
Current - Collector Cutoff (Max):
25nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 2A, 2V
Power - Max:
3 W
Frequency - Transition:
165MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020B-3

ZXTN619MATA FAQ

1.How can I place an order for ZXTN619MATA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTN619MATA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTN619MATA reliable?

The price and inventory of ZXTN619MATA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTN619MATA is usually 5 days.

3.What payment methods are accepted for ZXTN619MATA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTN619MATA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTN619MATA?

ZXTN619MATA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTN619MATA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTN619MATA?

For technical support, including ZXTN619MATA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTN619MATA requirements.

6.How does Aetrix verify that ZXTN619MATA is sourced from the original manufacturer or authorized distributors?

All ZXTN619MATA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTN619MATA meets industry standards.

7.What is the process for return or replacement of ZXTN619MATA?

All ZXTN619MATA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTN619MATA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTN619MATA part is unused and in its original packaging.

Return procedure for ZXTN619MATA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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