Diodes Incorporated ZXTP01500BGQTC

Overview

ZXTP01500BGQ from Diodes Incorporated is a 500V PNP high-performance bipolar junction transistor in SOT223 package, rated for -150mA continuous collector current and -500V collector-emitter breakdown voltage, with V_CE(SAT) ≤ -500 mV at I_C = -50 mA / I_B = -10 mA, used in high-voltage industrial power supply switching stages.

For engineers reviewing the ZXTP01500BGQ datasheet, ZXTP01500BGQ pinout, ZXTP01500BGQ application, or ZXTP01500BGQ equivalent, key selection criteria include verified -500V BV_CEO, AEC-Q101 qualification for automotive-grade reliability, thermal resistance of 41.7°C/W on 50mm × 50mm copper, and SOT223 lead-frame thermal performance under pulsed high-voltage loads.

Technical Context

This PNP transistor operates in linear and switching modes with guaranteed -500V V_CEO and -500 mA I_CM, supporting high-voltage off-state blocking and controlled turn-on/turn-off via base current drive. Its f_T of 60 MHz enables stable operation up to mid-frequency switching applications.

The device features low V_BE(SAT) (-900 mV at I_C = -50 mA), tight h_FE range (80–300 at I_C = -50 mA), and ESD robustness (4 kV HBM), making it suitable for regulated DC-DC converters where base drive efficiency and transient immunity are critical.

Key Specifications

Pinout & Package

SOT223 package with exposed collector tab for thermal enhancement; molded green compound, UL 94V-0 rated, 0.112 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage PNP transistor applications.

Compared with ZXTP2012G and MJD2955T4G, ZXTP01500BGQ uniquely delivers -500 V blocking capability in SOT223 while maintaining automotive qualification and tight h_FE spread-critical for high-reliability, space-constrained 400 V+ systems where voltage margin and thermal density are primary constraints.

Availability

ZXTP01500BGQ is available at Aetrix Electronics and suitable for industrial power supply, automotive HVAC control, and high-voltage sensor interface applications requiring stable component supply and long-term lifecycle support.

Supply support for ZXTP01500BGQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

ZXTP series PNP transistors are engineered for high-voltage switching and linear regulation in harsh environments, emphasizing AEC-Q101 compliance, thermal robustness, and parametric consistency across temperature and lot.

FAQ

What is the maximum safe operating voltage for ZXTP01500BGQ in continuous DC applications?

The ZXTP01500BGQ is rated for -500 V V_CEO and -500 V V_CBO, meaning it can safely block up to -500 V DC between collector and emitter with base open. For reliable long-term operation, design margins recommend limiting steady-state V_CE to ≤ -400 V to accommodate transients and temperature derating per the SOA curve.

Can ZXTP01500BGQ be used in surface-mount layouts with thermal vias?

Yes - the SOT223 package's exposed collector tab is designed for direct connection to internal or external copper planes. Thermal vias under the tab (≥6×0.3 mm diameter, filled or tented) reduce R_θJA by up to 25% on 4-layer boards, provided solder coverage exceeds 90% and IPC-A-610 Class 2 standards are met.

How does the -900 mV V_BE(SAT) affect base drive circuit design?

A V_BE(SAT) of -900 mV at I_C = -50 mA means the base-emitter junction requires sufficient negative bias to overcome this threshold. Base resistors must deliver ≥-10 mA (per h_FE min = 80) with ≤ -1.2 V headroom to ensure saturation, especially at elevated temperatures where V_BE decreases by ~2 mV/°C.

Is ZXTP01500BGQ suitable for linear regulator pass transistor applications?

Yes - its -150 mA I_C rating, low V_CE(SAT), and 150°C T_J(max) support linear regulation up to ~1.5 W dissipation with proper heatsinking. However, the h_FE variation (80–300) requires feedback compensation to maintain loop stability across temperature and current ranges.