Diodes Incorporated ZXTP19020DGTA

Overview

ZXTP19020DGTA from Diodes Incorporated is a 20V PNP high-gain bipolar junction transistor in SOT223 package, rated for -8A continuous collector current, with V_CE(sat) < -47mV at -1A/-100mA drive and DC current gain (h_FE) up to 900 at -100mA. It serves as a high-current switching element in motor drive and solenoid control circuits.

For engineers reviewing the ZXTP19020DGTA datasheet, ZXTP19020DGTA pinout, ZXTP19020DGTA application, or ZXTP19020DGTA equivalent, key selection criteria include its AEC-Q101 qualification, low R_CE(sat) of 28mΩ, thermal resistance of 23.5°C/W under optimized copper layout, and complementary pairing with ZXTN19020DG for H-bridge designs.

Technical Context

This PNP transistor operates in saturation-switching mode with verified reverse-blocking capability (V_ECO = -4V) and robust thermal performance: R_θJA = 23.5°C/W when mounted on 50mm × 50mm 2oz copper. Its f_T = 176MHz supports fast switching transitions with t_d = 23ns and t_f = 49.6ns under -1A load.

The device features low base-emitter turn-on voltage (V_BE(on) = -930mV at -8A), enabling efficient drive from standard logic-level controllers, and maintains h_FE ≥ 45 at -8A, ensuring stable gain across high-current operation without thermal runaway.

Key Specifications

Pinout & Package

SOT223 package: surface-mount, 4-pin (3 active + 1 thermal tab), molded green compound, UL 94V-0 rated, 0.112g weight. Collector lead serves as thermal path; tab electrically connected to collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Compared with ZXTP2012GTA and MJD44H11T4G, ZXTP19020DGTA delivers superior efficiency at 8A due to its 28mΩ R_CE(sat), while maintaining SMT manufacturability and automotive qualification-making it optimal for space-constrained, thermally demanding motor and solenoid drives.

Availability

ZXTP19020DGTA is available at Aetrix Electronics and suitable for motor drive, relay drive, and solenoid control applications requiring stable component supply, AEC-Q101 compliance, and high-current SMT switching capability.

Supply support for ZXTP19020DGTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The ZXTP series targets automotive and industrial power switching applications, designed specifically for high-current, low-saturation-voltage PNP/NPN pairs in compact SMT packages with AEC-Q101 validation.

FAQ

What is the maximum allowable continuous collector current for ZXTP19020DGTA at 100°C ambient?

At T_A = +100°C, the device's continuous I_C is derated to approximately -4.3A based on its 1.2W power dissipation limit and R_θJA = 104°C/W (minimum copper). Derating curves in DS33732 Rev. 2 confirm linear reduction from -8A at 25°C to zero at 125°C ambient under standard mounting conditions.

Is ZXTP19020DGTA pin-compatible with ZXTN19020DG?

Yes - both devices share identical SOT223 pinout (E-B-C-tab), mechanical dimensions, and thermal pad layout. This enables direct complementary placement in H-bridge or push-pull topologies without PCB redesign, and simplifies layout symmetry and thermal balancing.

Does ZXTP19020DGTA require a base resistor when driven by a 3.3V microcontroller GPIO?

Yes - a series base resistor is required to limit I_B to ≤ -100mA for full saturation at -1A I_C. With V_BE(sat) ≈ -1.05V, a 22Ω resistor delivers ~100mA from 3.3V, ensuring reliable turn-on while avoiding excessive base current that could damage the MCU output stage.

Can ZXTP19020DGTA be used in linear amplifier configurations?

No - this device is optimized for saturated switching, not linear operation. Its h_FE variation (25–900) and thermal instability above 1W dissipation make it unsuitable for Class-A/B amplifiers. Use dedicated audio or RF transistors with specified linearity and SOA curves instead.