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Diodes Incorporated ZXTP2008GTA
- Part No.:
- ZXTP2008GTA
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
ZXTP2008GTA.pdf
- Description:
- TRANS PNP 30V 5.5A SOT-223-3
- Quantity:
- Payment:
- Shipping:
Inventory:1,807
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Product details
Overview
ZXTP2008GTA from Diodes Incorporated is a 30V PNP low-saturation bipolar junction transistor in SOT223 package, rated for −5.5A continuous collector current and −20A peak pulse current, with VCE(SAT) < −60mV at −1A and on-resistance of 31mΩ at −5.5A, deployed in high-efficiency DC-DC converters and MOSFET gate drivers.
For engineers reviewing the ZXTP2008GTA datasheet, ZXTP2008GTA pinout, ZXTP2008GTA application, or ZXTP2008GTA equivalent, key selection criteria include guaranteed gain linearity down to −10mA, hFE specified up to −20A, AEC-Q101 qualification, and thermal resistance RθJA = 42°C/W under standard mounting conditions.
Technical Context
This PNP transistor operates as a high-current, low-VCE(SAT) power switch with robust breakdown ratings: VCBO = −50V, VCEO = −30V, and VEBO = −7V. Its gain remains stable across wide current range (hFE = 100–300 from −10mA to −20A), supporting precise analog and switching control.
Designed for thermally demanding applications, it delivers 3.0W power dissipation at TA = +25°C with linear derating (24mW/°C) and low junction-to-lead thermal resistance (RθJL = 8.8°C/W), enabling reliable operation up to +150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −30V - Ensures safe operation in 24V rail systems with margin against transients. |
| IC (cont.) | −5.5A - Supports sustained load switching in motor drivers and charging circuits without thermal shutdown. |
| VCE(SAT) | < −60mV @ −1A - Minimizes conduction loss and self-heating in high-duty-cycle power stages. |
| RSAT | 31mΩ @ −5.5A - Enables direct replacement of logic-level MOSFETs in compact, cost-sensitive designs. |
| hFE | 100–300 (−10mA to −20A) - Maintains predictable base drive requirements across full load range. |
| fT | 110MHz - Supports fast switching in PWM frequencies up to several MHz with controlled rise/fall times. |
| ESD HBM | 4kV - Provides robust handling during board assembly and system integration without additional protection. |
Pinout & Package
Package: SOT223 - Surface-mount plastic package with exposed collector tab for enhanced thermal conduction; 0.112g weight; UL 94V-0 rated molding compound; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current source terminal | Connected to positive rail in high-side switch configuration; requires low-impedance return path. |
| Base (B) | Control input | Driven with −100mA typical for full saturation at −1A; compatible with standard logic-level drivers. |
| Collector (C) | Current sink terminal | Exposed metal tab - must be soldered to ≥52mm × 52mm 2oz copper pad for rated 3.0W dissipation. |
| Tab / Heat Sink | Thermal and electrical connection | Internally connected to collector; provides primary heat path to PCB; electrically active. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(SAT) | < −60mV at −1A enables <100mW conduction loss per switch in 12V/24V power rails. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress. |
| Gain linearity | Stable hFE down to −10mA supports precision current sensing and analog feedback loops. |
| Green construction | Halogen- and antimony-free, RoHS-compliant, with <900ppm Br/Cl and <1000ppm Sb compounds. |
| High ICM | −20A peak pulse rating accommodates inrush currents in motor startup and capacitor charging. |
Applications
| DC-DC Converters | MOSFET Gate Drivers |
|---|---|
Use Scenario: Synchronous buck converter output stage in industrial power supplies. IC Role / Device Role / Timing Role: High-side PNP switch controlling energy transfer to output inductor. Use Value: Low 31mΩ on-resistance reduces conduction loss by >40% versus comparable discrete BJTs at 5A load. |
Use Scenario: Active pull-down stage in half-bridge gate driver ICs. IC Role / Device Role / Timing Role: Fast-turn-off switch discharging MOSFET gate capacitance during dead-time. Use Value: 43ns tON/230ns tOFF ensures clean gate transitions and prevents shoot-through in 100kHz–1MHz PWM. |
| Charging Circuits | Motor Control |
Use Scenario: Constant-current battery charging path in portable medical devices. IC Role / Device Role / Timing Role: Precision current-regulating pass element in linear charger topology. Use Value: Exceptional hFE linearity down to −10mA enables accurate 100mA–5A current setting with minimal base drive variation. |
Use Scenario: Directional H-bridge leg in 24V brushed DC motor controllers. IC Role / Device Role / Timing Role: High-current commutation switch handling bidirectional stall currents. Use Value: −20A peak pulse rating sustains 5× stall current for 100µs without second breakdown, improving fault tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2008GTA | NPN complement with identical SOT223 package, −5.5A rating, but VCE(SAT) = −65mV @ −1A and fT = 120MHz. | Requires inverted drive logic and cannot replace PNP in high-side configurations without circuit redesign. | Select only when NPN topology is fixed and complementary switching is required. |
| MJD2955T4G | TO-220 package, −10A IC, VCE(SAT) = −1.1V @ −5A - higher saturation voltage, larger footprint, no AEC-Q101 qualification. | Suitable for non-automotive, lower-frequency (<50kHz) linear regulators where thermal mass compensates for higher loss. | Choose only if board space allows TO-220 and automotive qualification is not required. |
Compared with ZXTN2008GTA and MJD2955T4G, ZXTP2008GTA uniquely combines AEC-Q101 compliance, SOT223 surface-mount compatibility, sub-60mV saturation, and gain stability to −10mA - making it optimal for space-constrained, high-reliability 24V power conversion where PNP polarity and thermal efficiency are critical.
Availability
ZXTP2008GTA is available at Aetrix Electronics and suitable for DC-DC converters, MOSFET gate drivers, and motor control applications requiring stable component supply, automotive-grade reliability, and consistent parametric performance across production batches.
Supply support for ZXTP2008GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.
ZXTP2008GTA belongs to Diodes' AEC-Q101-qualified PNP transistor family, engineered specifically for high-current, low-loss switching in automotive power systems and industrial power conversion where thermal efficiency and long-term parametric stability are essential.
FAQ
What is the maximum allowable junction temperature for ZXTP2008GTA?
The absolute maximum operating junction temperature is +150°C, verified per AEC-Q101 stress testing. Continuous operation at this limit requires strict thermal design: RθJA must be ≤42°C/W using a 52mm × 52mm 2oz copper pad, and ambient temperature must remain ≤+75°C to maintain safe margin.
Is ZXTP2008GTA suitable for high-frequency switching above 500kHz?
Yes - with fT = 110MHz and measured tON/tOFF of 43ns/230ns, it supports clean switching up to 1MHz in hard-switched topologies. However, layout must minimize base-emitter loop inductance and use low-ESR base drive to avoid oscillation at high edge rates.
Does the SOT223 tab require electrical isolation from the PCB ground plane?
No - the exposed collector tab is electrically connected to the collector terminal and must be soldered directly to a dedicated copper pour tied to the collector net. Isolating it would disable its thermal function and violate JEDEC mounting guidelines, risking premature thermal failure.
How does hFE variation affect base drive design across temperature?
hFE decreases by ~25% from +25°C to +100°C at −5A, but remains ≥145 (min). Base current must be designed for worst-case hFE = 70 at −20A and +100°C - requiring ≥286mA IB to sustain full saturation, verified via VBE(SAT) = −1.13V at that condition.
ZXTP2008GTA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 5.5 A
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 210mV @ 500mA, 5.5A
- Current - Collector Cutoff (Max):
- 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 1A, 1V
- Power - Max:
- 3 W
- Frequency - Transition:
- 110MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223-3
ZXTP2008GTA FAQ
1.How can I place an order for ZXTP2008GTA through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXTP2008GTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXTP2008GTA reliable?
The price and inventory of ZXTP2008GTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTP2008GTA is usually 5 days.
3.What payment methods are accepted for ZXTP2008GTA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTP2008GTA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXTP2008GTA?
ZXTP2008GTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXTP2008GTA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXTP2008GTA?
For technical support, including ZXTP2008GTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTP2008GTA requirements.
6.How does Aetrix verify that ZXTP2008GTA is sourced from the original manufacturer or authorized distributors?
All ZXTP2008GTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTP2008GTA meets industry standards.
7.What is the process for return or replacement of ZXTP2008GTA?
All ZXTP2008GTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTP2008GTA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXTP2008GTA part is unused and in its original packaging.
Return procedure for ZXTP2008GTA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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