Diodes Incorporated ZXTP2008ZQTA

Overview

ZXTP2008ZQTA from Diodes Incorporated is a PNP bipolar junction transistor (BJT) engineered for automotive-grade medium-power switching, featuring V_CEO = −30 V, I_C = −5.5 A continuous, V_CE(SAT) ≤ −55 mV @ −5.5 A, R_SAT = 24 mΩ, and AEC-Q101 qualification-used in MOSFET gate drivers and DC-DC converter power stages.

For engineers reviewing the ZXTP2008ZQTA datasheet, ZXTP2008ZQTA pinout, ZXTP2008ZQTA application, or ZXTP2008ZQTA equivalent, key selection criteria include saturation voltage linearity at high current, gain stability up to −20 A, thermal resistance (R_θJA = 60 °C/W on 50 mm × 50 mm copper), and SOT89 package mechanical compliance with J-STD-020 Level 1 moisture sensitivity.

Technical Context

This PNP BJT operates in linear and saturated switching modes with specified h_FE of 70–300 across I_C = −10 mA to −20 A at V_CE = −1 V, enabling robust current amplification in high-side driver configurations. Its low V_CE(SAT) and 24 mΩ on-resistance minimize conduction loss in pulsed power control circuits.

The device uses a planar epitaxial die structure with matte tin-plated leads and green molding compound (UL 94V-0), supporting stable operation from −55 °C to +150 °C. Thermal performance is characterized with R_θJL = 3.23 °C/W (junction-to-lead), critical for solder-point temperature management in thermally constrained PCB layouts.

Key Specifications

Pinout & Package

Package: SOT89 - Surface-mount plastic package with exposed collector tab for thermal conduction; 0.05 g mass; UL 94V-0 rated; J-STD-020 Level 1 moisture sensitivity; matte tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Compared with ZXTP2008ZQTA, ZXTP2012ZQTA trades lower conduction loss for higher voltage tolerance, while DMT3008LKQ-7 sacrifices automotive reliability and current capacity for miniaturization-making ZXTP2008ZQTA optimal for AEC-Q101-compliant 12 V power switching where thermal and gain stability are critical.

Availability

ZXTP2008ZQTA is available at Aetrix Electronics and suitable for DC-DC converters, MOSFET gate drivers, and automotive motor control systems requiring stable component supply, AEC-Q101 traceability, and production-ready reel packaging (1000 pcs/reel, 12 mm tape width).

Supply support for ZXTP2008ZQTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

ZXTP2008ZQTA belongs to Diodes' automotive-qualified PNP BJT portfolio, developed specifically for high-reliability power switching in 12 V vehicle subsystems-including body electronics, infotainment power supplies, and ADAS sensor interfaces.

FAQ

What is the maximum allowable junction temperature for ZXTP2008ZQTA?

The absolute maximum junction temperature is +150 °C, with continuous operation supported from −55 °C to +150 °C ambient. Derating begins at +25 °C ambient, reducing maximum power dissipation linearly by 16.8 mW/°C on 50 mm × 50 mm copper-ensuring safe operation up to +125 °C case temperature under typical automotive under-hood conditions.

Is ZXTP2008ZQTA suitable for use in synchronous rectification?

No-ZXTP2008ZQTA is a PNP BJT, not a synchronous rectifier MOSFET. It lacks body diode reverse recovery characteristics and cannot replace Schottky or MOSFET rectifiers in flyback or LLC topologies. However, it is used upstream as a gate driver or control switch enabling synchronous rectifier ICs.

Does the SOT89 package require thermal vias for proper heat dissipation?

Yes-the exposed collector tab must be soldered to a minimum 25 mm² copper pour with ≥4 thermal vias (0.3 mm diameter, filled or plated) connecting to inner or backside ground/power planes. Without this, R_θJA degrades from 60 °C/W to >83 °C/W, risking thermal runaway above 1.2 W dissipation.

How does the gain linearity specification benefit motor control designs?

Exceptional h_FE linearity down to −10 mA ensures predictable base current requirements across the full 0–5.5 A load range. This eliminates gain-dependent nonlinearity in current-sense feedback loops and enables accurate low-speed torque regulation without digital compensation-critical for HVAC blower and power seat actuator applications.