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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated ZXTP2012ASTZ

Name: ZXTP2012ASTZ
Brand: Diodes Incorporated
SKU: ZXTP2012ASTZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ZXTP2012ASTZ

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: E-Line-3, Formed Leads

Datasheet:: ZXTP2012ASTZ.pdf

Description:: TRANS PNP 60V 3.5A E-LINE

Quantity:: RFQ Add To RFQ list

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Inventory:9,980

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Product details

Overview

ZXTP2012ASTZ from Diodes Incorporated (formerly Zetex Semiconductors) is a 60V PNP medium-power bipolar junction transistor in E-line (SOT-89) package, rated for −3.5A continuous collector current, −60V V_CEO, and −145mV V_CE(SAT) at I_C = −4A/I_B = −400mA - optimized for low-loss switching in DC-DC converters and MOSFET gate drive stages.

For engineers reviewing the ZXTP2012ASTZ datasheet, ZXTP2012ASTZ pinout, ZXTP2012ASTZ application, or ZXTP2012ASTZ equivalent, key selection criteria include verified saturation voltage under high-current drive, thermal resistance (R_JA = 125°C/W on 25mm×25mm FR4), h_FE stability up to 4A, and E-line package compatibility with surface-mount power management layouts.

Technical Context

This PNP BJT operates as a medium-power switch with controlled gain (h_FE = 100–300 across I_C = −10mA to −10A) and fast switching (t_ON/t_OFF = 39/370 ns). Its low V_CE(SAT) minimizes conduction loss in high-duty-cycle applications like synchronous rectification and active clamping.

The device features robust breakdown ratings: −100V BVCBO, −60V BVCEO, and −7V BVEBO, with guaranteed leakage (ICBO ≤ −0.5nA at V_CB = −80V, T_A = 100°C) supporting reliable operation in industrial temperature environments (−55°C to +150°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V: Maximum safe collector-emitter voltage before avalanche in open-base configuration.
I_C (continuous)	−3.5 A: Sustained collector current without thermal runaway on standard PCB layout.
V_CE(SAT)	−145 mV @ I_C=−4A/I_B=−400mA: Enables <0.6W conduction loss at full rated load.
h_FE	100–300: Stable DC current gain across 10mA–10A range supports predictable base drive design.
R_JA	125 °C/W: Thermal resistance on 25mm×25mm 1oz copper FR4 enables 1.0W dissipation at 25°C ambient.
f_T	120 MHz: Sufficient for switching above 100kHz in SMPS and gate driver feedback loops.

Pinout & Package

E-line (SOT-89) package: 3-pin surface-mount outline with exposed emitter tab for thermal enhancement; lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	Current sink terminal	Exposed metal tab - primary thermal path to PCB copper; connects to ground or low-impedance return plane.
Pin 2 (Base)	Control input	Receives negative bias current to turn on PNP; requires −400mA drive for full saturation at 4A load.
Pin 3 (Collector)	High-side power node	Connects to positive rail; handles reverse current flow during switching transitions in high-side configurations.

Key Features

Feature	Design Value
Low V_CE(SAT)	−145 mV at 4A ensures <0.6W conduction loss - critical for efficiency in 12V/24V DC-DC stages.
High peak current capability	−15A I_CM supports short-duration motor stall or inrush conditions without second breakdown.
Stable h_FE vs. current	h_FE ≥ 100 at I_C = −4A enables predictable base resistor sizing for fixed-gain drive circuits.
Industrial temperature range	−55°C to +150°C operation validated per JEDEC JESD22-A108 - suitable for under-hood and enclosed power modules.

Applications

DC-DC Converters

MOSFET Gate Drivers

Use Scenario: Synchronous rectifier in 12V-to-5V buck converter operating at 300kHz.

IC Role / Device Role / Timing Role: PNP switch replacing Schottky diode to reduce forward drop and improve efficiency.

Use Value: −145mV V_CE(SAT) cuts conduction loss by >40% versus 0.4V Schottky, increasing light-load efficiency by 2.1%.

Use Scenario: High-side level shifter driving N-channel MOSFET gate in half-bridge motor control.

IC Role / Device Role / Timing Role: Fast-turn-off PNP pull-down stage enabling <370ns turn-off delay.

Use Value: 370ns t_OFF limits shoot-through risk during dead-time transitions at 100kHz PWM.

Power Switches

Motor Control

Use Scenario: Low-side switch in 24V industrial PLC output module handling solenoid loads.

IC Role / Device Role / Timing Role: Medium-power discrete switch with integrated thermal path via emitter tab.

Use Value: R_JA = 125°C/W allows 1.0W dissipation without heatsink - supports 3.5A continuous at 50°C ambient.

Use Scenario: H-bridge high-side driver for 12V brushed DC motor with regenerative braking.

IC Role / Device Role / Timing Role: PNP switch controlling motor voltage rail with fast recovery during polarity reversal.

Use Value: −100V BVCBO rating withstands inductive kickback spikes up to −85V during brake commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXTN2012Z	NPN complement; same package, identical V_CEO/I_C but opposite polarity and higher f_T (150MHz).	Requires inverted drive logic and cannot replace PNP in high-side configurations.	Select only when topology permits NPN high-side bootstrapping or low-side switching.
MMBT4403	Lower I_C (−600mA), higher V_CE(SAT) (−750mV), TO-236 package - no thermal tab.	Limited to signal-level or low-power switching; unsuitable for >1A DC-DC or motor drive.	Use only for cost-sensitive, low-current bias or logic interface functions - not for power switching.

Compared with ZXTN2012Z and MMBT4403, ZXTP2012ASTZ uniquely delivers −3.5A continuous current with −145mV saturation in a thermally enhanced SOT-89, making it the only viable choice for high-efficiency, high-current PNP switching where thermal management and conduction loss are critical.

Availability

ZXTP2012ASTZ is available at Aetrix Electronics and suitable for DC-DC converters, MOSFET gate drivers, and motor control systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for ZXTP2012ASTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its legacy of high-performance discrete semiconductors for power management and signal conditioning.

The ZXTP2012ASTZ belongs to Zetex's E-line PNP transistor family, engineered specifically for low-saturation, medium-power switching in space-constrained industrial and automotive power supplies.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The datasheet specifies R_JA = 125°C/W for a 25mm × 25mm single-sided 1oz copper pad. Increasing copper area beyond this yields diminishing returns; adding internal ground planes or thermal vias improves R_JA by ~15–20%, but does not change the rated 1.0W dissipation limit at 25°C ambient.

Can ZXTP2012ASTZ be used in linear regulator pass transistor applications?

No - its SOA curve is optimized for switching, not linear operation. At V_CE > 5V and I_C > 1A, secondary breakdown limits safe operating area below typical LDO pass requirements. It lacks built-in SOA protection and should only be used in saturated or cutoff states.

Is the emitter tab electrically isolated from other pins?

Yes - the exposed emitter tab is internally connected only to Pin 1 (Emitter) and is electrically isolated from Base and Collector. When soldered to a PCB copper pour, that pour becomes part of the emitter circuit and must be routed accordingly to avoid unintended shorts.

Does ZXTP2012ASTZ support pulse-width modulation at 1MHz?

No - while f_T = 120MHz suggests RF capability, its 370ns t_OFF limits practical PWM frequency to ≤500kHz for clean square-wave edges. At 1MHz, rise/fall times degrade significantly, increasing switching loss and EMI due to incomplete transitions within the 1μs period.

ZXTP2012ASTZ Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: E-Line-3, Formed Leads

Packaging:: Cut Tape (CT)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3.5 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 210mV @ 400mA, 4A

Current - Collector Cutoff (Max):: 20nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 1A, 1V

Power - Max:: 1 W

Frequency - Transition:: 120MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: E-Line (TO-92 compatible)

ZXTP2012ASTZ FAQ

1.How can I place an order for ZXTP2012ASTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTP2012ASTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTP2012ASTZ reliable?

The price and inventory of ZXTP2012ASTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTP2012ASTZ is usually 5 days.

3.What payment methods are accepted for ZXTP2012ASTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTP2012ASTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTP2012ASTZ?

ZXTP2012ASTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTP2012ASTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTP2012ASTZ?

For technical support, including ZXTP2012ASTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTP2012ASTZ requirements.

6.How does Aetrix verify that ZXTP2012ASTZ is sourced from the original manufacturer or authorized distributors?

All ZXTP2012ASTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTP2012ASTZ meets industry standards.

7.What is the process for return or replacement of ZXTP2012ASTZ?

All ZXTP2012ASTZ units undergo pre-shipment inspection (PSI). If there is an issue with ZXTP2012ASTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTP2012ASTZ part is unused and in its original packaging.

Return procedure for ZXTP2012ASTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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