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Diodes Incorporated ZXTP2013GTA

Part No.:
ZXTP2013GTA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixZXTP2013GTA.pdf
Description:
TRANS PNP 100V 5A SOT-223-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,473

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Product details

Overview

ZXTP2013GTA from Diodes Incorporated is a 100V PNP medium-power low-saturation transistor in SOT223 package, rated for -5A continuous collector current and -10A peak pulse current, with VCE(SAT) < -90mV @ -1A and RSAT = 60mΩ, used in high-side switching and motor driving circuits requiring robust voltage blocking and low conduction loss.

For engineers reviewing the ZXTP2013GTA datasheet, ZXTP2013GTA pinout, ZXTP2013GTA application, or ZXTP2013GTA equivalent, key selection criteria include verified -100V VCEO, AEC-Q101 qualification, hFE ≥ 100 @ -10A, thermal resistance RθJC = 13.8°C/W, and SOT223 lead-frame thermal performance under 25mm×25mm 1oz copper PCB conditions.

Technical Context

This PNP bipolar junction transistor operates as a high-voltage, medium-current switch with specified gain up to -10A (hFE ≥ 5), enabling stable linear and saturated-mode control in automotive and industrial power stages. Its BVCBO of -140V and BVCEO of -100V support reliable operation in 48V–72V bus systems with margin against transients.

The device features low VBE(sat) (-985mV typ @ -4A) and fast switching (ton = 42ns, toff = 540ns), optimized for pulsed-load applications such as SLIC interface and line switching where duty cycle ≤ 2% and pulse width ≤ 300μs are maintained.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO -100V - Withstands 100V reverse collector-emitter voltage before breakdown, suitable for 72V automotive supply rails with transient margin.
IC (cont.) -5A - Supports continuous load current up to 5A in high-side configuration without forced cooling on 25mm×25mm 1oz Cu PCB.
VCE(SAT) < -90mV @ -1A - Delivers <90mV saturation drop at 1A, minimizing conduction loss and self-heating in switching regulators.
hFE ≥5 @ -10A - Maintains usable current gain even at full peak pulse current, ensuring predictable base drive requirements.
RθJC 13.8°C/W - Enables direct heat transfer from die to case, supporting thermal design with external heatsinking via collector tab.
fT 125MHz - Supports high-speed switching in PWM-driven motor control and telecom line interface applications.
ESD HBM 4000V - Meets JEDEC Class 3A ESD robustness, reducing susceptibility to handling damage in assembly environments.

Pinout & Package

Package: SOT223 (Type DN), surface-mount, thermally enhanced plastic case with exposed collector tab; weight ≈ 0.112g; moisture sensitivity level 1 per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main current-carrying terminal, electrically connected to metal tab Primary heat path to PCB copper; must be soldered to ≥25mm² thermal pad for rated power dissipation.
Emitter (E) Current source node in PNP configuration Connected to higher-potential rail (e.g., battery +); defines reference for base bias and load return path.
Base (B) Control input for transistor turn-on/turn-off Requires negative current relative to emitter; typical drive: -100mA for -1A IC saturation.

Key Features

Feature Design Value
Low saturation resistance RSAT = 60mΩ - Reduces I²R losses and thermal stress during sustained conduction in motor drivers.
AEC-Q101 qualified Qualified for automotive applications - Ensures reliability under temperature cycling, humidity, and mechanical shock per AEC stress test standards.
High voltage blocking BVCEO = -100V - Allows use in 48V/60V industrial and commercial power systems without additional clamping.
Green construction Halogen- and antimony-free, RoHS 3 compliant - Meets EU environmental directives and supports sustainable manufacturing compliance.
Thermal performance RθJL = 10.48°C/W - Enables efficient heat extraction through collector lead to PCB, critical for high-duty-cycle operation.

Applications

Motor Driving Line Switching

Use Scenario: Driving brushed DC motors in automotive HVAC actuators and industrial valve controllers.

IC Role / Device Role / Timing Role: High-side PNP switch controlling motor current flow from battery rail to motor winding.

Use Value: Low VCE(SAT) minimizes power loss at 3–5A loads, while -100V rating accommodates load-dump transients up to ±87V.

Use Scenario: Solid-state replacement for electromechanical relays in building automation and power distribution panels.

IC Role / Device Role / Timing Role: Medium-power load switch isolating 24–48V DC circuits with fast turn-off for fault protection.

Use Value: 540ns toff enables rapid de-energization during overcurrent events, improving system safety response time.

High Side Switches Subscriber Line Interface Cards (SLIC)

Use Scenario: Power domain switching in telecom power supplies and redundant 48V backup systems.

IC Role / Device Role / Timing Role: PNP-based high-side switch regulating upstream supply to downstream converters or sensors.

Use Value: Verified hFE ≥ 100 @ -10mA ensures stable base drive across temperature, reducing gate driver complexity.

Use Scenario: Ringing current generation and loop feed control in analog telephone line interface modules.

IC Role / Device Role / Timing Role: Current-regulated PNP pass element delivering precise -20mA to -100mA loop current.

Use Value: Tight VCE(SAT) tolerance (<±10mV variation) maintains accurate current regulation under varying line impedance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
ZXTP2029GTA VCEO = -60V, IC = -3A, RθJC = 15.5°C/W Limited to ≤42V systems; lower current capability reduces thermal margin in motor drives. Select when cost sensitivity outweighs voltage headroom needs and board space allows larger thermal pad.
MJD2955T4G VCEO = -70V, IC = -12A, TO-220 package, no AEC-Q101 qualification Higher current but larger footprint and no automotive qualification; requires heatsink mounting. Prefer for non-automotive industrial applications needing >5A continuous current and discrete heatsink integration.

Compared with ZXTP2013GTA, ZXTP2029GTA trades voltage margin for lower cost in 24V systems, while MJD2955T4G offers higher current in a through-hole package but lacks AEC-Q101 validation and SOT223 thermal efficiency.

Availability

ZXTP2013GTA is available at Aetrix Electronics and suitable for motor driving, line switching, and high-side switching applications requiring stable component supply, AEC-Q101 compliance, and SOT223 thermal performance in compact designs.

Supply support for ZXTP2013GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

ZXTP2013GTA belongs to Diodes' high-voltage PNP transistor product line, engineered specifically for automotive and industrial power switching where AEC-Q101 reliability, low saturation voltage, and SOT223 thermal efficiency are critical.

FAQ

Is ZXTP2013GTA pin-compatible with standard SOT223 PNP transistors?

Yes - ZXTP2013GTA uses the standard SOT223 (Type DN) pinout: Collector (tab), Emitter (pin 1), Base (pin 2), with pin 3 internally connected to collector. This matches JEDEC-standard SOT223 layout and enables direct PCB footprint reuse with other SOT223 PNP devices like MMBT2907A, though electrical ratings differ.

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum operating junction temperature is +150°C. For continuous operation at full -5A current, thermal design must ensure TJ ≤ 150°C using RθJA = 78°C/W (25mm×25mm 1oz Cu) or RθJC = 13.8°C/W with external heatsinking - derating begins above +25°C ambient.

Does ZXTP2013GTA support pulsed operation beyond its DC ratings?

Yes - it supports -10A peak pulse current (ICM) with pulse width ≤ 300μs and duty cycle ≤ 2%, validated by SOA curves in the datasheet. At 100μs pulses, safe operating area extends to -100V VCE, enabling robust surge handling in telecom and industrial transient environments.

How does the AEC-Q101 qualification impact design-in for automotive applications?

AEC-Q101 qualification confirms ZXTP2013GTA has passed stress tests including temperature cycling, high-temperature reverse bias, and ESD (HBM 4kV), making it suitable for under-hood and body-control modules. It also implies PPAP readiness and manufacturing in IATF 16949-certified facilities - required for Tier 1 automotive BOM acceptance.

ZXTP2013GTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
5 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
340mV @ 400mA, 4A
Current - Collector Cutoff (Max):
20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 1V
Power - Max:
3 W
Frequency - Transition:
125MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3

ZXTP2013GTA FAQ

1.How can I place an order for ZXTP2013GTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTP2013GTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTP2013GTA reliable?

The price and inventory of ZXTP2013GTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTP2013GTA is usually 5 days.

3.What payment methods are accepted for ZXTP2013GTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTP2013GTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTP2013GTA?

ZXTP2013GTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTP2013GTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTP2013GTA?

For technical support, including ZXTP2013GTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTP2013GTA requirements.

6.How does Aetrix verify that ZXTP2013GTA is sourced from the original manufacturer or authorized distributors?

All ZXTP2013GTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTP2013GTA meets industry standards.

7.What is the process for return or replacement of ZXTP2013GTA?

All ZXTP2013GTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTP2013GTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTP2013GTA part is unused and in its original packaging.

Return procedure for ZXTP2013GTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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