Diodes Incorporated ZXTP2039FTC
- Part No.:
- ZXTP2039FTC
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
ZXTP2039FTC.pdf
- Description:
- TRANS PNP 60V 1A SOT-23-3
- Quantity:
- Payment:

- Shipping:

Inventory:8,003
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Product details
Overview
ZXTP2039FTC from Diodes Incorporated (formerly Zetex Semiconductors) is a PNP silicon planar medium-power transistor in SOT23 package, rated for V(BR)CEV ≤ –80 V, continuous collector current of –1 A, and VCE(sat) ≤ –0.6 V at –1 A/–100 mA base drive. It serves as a high-gain, low-saturation switch in gate-driving and DC-DC power stages.
For engineers reviewing the ZXTP2039FTC datasheet, ZXTP2039FTC pinout, ZXTP2039FTC application, or ZXTP2039FTC equivalent, key selection criteria include verified PNP switching capability at –1 A, thermal performance on 15 mm × 15 mm FR4 with 1 oz copper, and compatibility with complementary NPN ZXTN2038F in half-bridge configurations.
Technical Context
This device operates as a medium-power PNP bipolar junction transistor optimized for fast switching with low VCE(sat) and high hFE (100–300 across 1 mA to 1 A). Its breakdown ratings-V(BR)CEV = –80 V and V(BR)CEO = –60 V-support use in 48 V and 60 V rail systems with margin.
The SOT23 package enables surface-mount integration in space-constrained power control circuits. Thermal derating follows JEDEC JESD51-2 guidelines, with 350 mW PD at TA = 25 °C and full derating above 100 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)CEV | –80 V: Maximum collector-emitter voltage under variable-base bias; supports robust operation in transient-prone 48 V industrial rails. |
| IC(cont) | –1 A: Continuous DC collector current rating on standard FR4 PCB; defines usable steady-state load switching capacity. |
| VCE(sat) | –0.6 V @ –1 A/–100 mA: Low saturation voltage ensures < 600 mW conduction loss at full rated current. |
| hFE | 100–300: DC current gain range across 1 mA–1 A; enables stable base drive design without overdesigning base resistor networks. |
| PD @ 25°C | 350 mW: Power dissipation limit on 15 mm × 15 mm single-sided 1 oz copper; sets thermal boundary for layout planning. |
| fT | 150 MHz @ –50 mA/–10 V: Transition frequency confirms suitability for switching frequencies up to ~10–20 MHz with adequate gain margin. |
| VBE(sat) | –1.2 V @ –1 A/–100 mA: Base-emitter saturation voltage used to size base drive circuitry and estimate driver power consumption. |
Pinout & Package
SOT23-3 plastic surface-mount package with gull-wing leads; standardized footprint per JEDEC TO-236AB. Dimensions: 2.67–3.05 mm length, 1.20–1.40 mm width, 0.95 mm nominal height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current source terminal for PNP operation | Connected to positive supply rail in high-side switch configurations; carries full load current. |
| 2 (Base) | Control input for minority-carrier injection | Receives negative current to turn on; requires –100 mA drive for full saturation at –1 A IC. |
| 3 (Collector) | Current sink terminal | Connected to load return path; voltage swing referenced to emitter determines operating quadrant. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | –0.6 V at –1 A reduces conduction loss by >30% vs. typical PNP transistors rated for same voltage class. |
| High hFE consistency | 100–300 across 1 mA–1 A enables single base-resistor design across wide load-current range. |
| SOT23 thermal performance | 350 mW PD on standard FR4 meets IPC-2221 Class B thermal requirements for industrial control modules. |
| Pb-free construction | RoHS-compliant materials and finish support lead-free reflow assembly without reliability degradation. |
Applications
| Power MOSFET Gate Driving | Low-Loss DC-DC Switching |
|---|---|
Use Scenario: Driving the gate of N-channel power MOSFETs in synchronous buck converters operating at 12–48 V input. IC Role / Device Role / Timing Role: High-side PNP switch providing fast, low-loss turn-on pulse to MOSFET gate via charge pump or bootstrap circuit. Use Value: VCE(sat) ≤ –0.6 V minimizes gate-drive power loss; hFE ≥ 100 ensures reliable drive with minimal base current overhead. | Use Scenario: Replacing mechanical relays in programmable logic controller (PLC) output modules handling 24 V DC loads up to 1 A. IC Role / Device Role / Timing Role: Medium-power PNP switch controlling load current path between +24 V rail and field device. Use Value: V(BR)CEV = –80 V provides 3× voltage margin against inductive kickback; SOT23 enables compact module layout. |
| Complementary Half-Bridge Stage | Industrial Sensor Excitation |
Use Scenario: Paired with complementary NPN ZXTN2038F to form discrete totem-pole output stage for analog front-end signal conditioning. IC Role / Device Role / Timing Role: PNP leg sourcing current during positive half-cycle; matched gain and saturation behavior enable balanced push-pull operation. Use Value: Matched hFE and VCE(sat) specs reduce crossover distortion; identical SOT23 footprint simplifies PCB layout symmetry. | Use Scenario: Providing constant-current excitation to 4-wire RTD sensors in precision temperature measurement circuits. IC Role / Device Role / Timing Role: Precision current source configured with emitter-degeneration resistor and feedback-controlled base bias. Use Value: Tight hFE tolerance (100–300) and low VCE(sat) drift with temperature ensure < 0.1% current regulation error over –40 to +85 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP medium-power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTP2029F | V(BR)CEO = –45 V; VCE(sat) = –0.5 V @ –500 mA; hFE = 100–250 | Limited to ≤36 V systems; lower current rating reduces thermal margin in 1 A designs | Select only when system voltage ≤36 V and peak IC < 0.7 A to maintain safe SOA margin. |
| MMBT4403 | V(BR)CEO = –40 V; VCE(sat) = –0.75 V @ –500 mA; hFE = 50–250 | Lower breakdown and higher saturation voltage increase conduction loss and limit rail voltage headroom | Acceptable only for cost-sensitive 12–24 V consumer applications where thermal derating is not critical. |
Compared with ZXTP2029F and MMBT4403, ZXTP2039FTC delivers superior voltage margin (–80 V), lower conduction loss at 1 A, and tighter hFE consistency-making it the preferred choice for industrial 48 V power control where reliability and thermal headroom are prioritized.
Availability
ZXTP2039FTC is available at Aetrix Electronics and suitable for power MOSFET gate driving, industrial PLC output modules, and complementary half-bridge stages requiring stable component supply and long-term manufacturability.
Supply support for ZXTP2039FTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its portfolio of high-performance discrete transistors and diodes for industrial, automotive, and computing applications.
ZXTP2039FTC belongs to Zetex's medium-power bipolar transistor family, engineered specifically for high-efficiency, high-voltage switching in space-constrained power interfaces and gate-drive circuits.
FAQ
What is the maximum safe operating collector current for ZXTP2039FTC at 85°C ambient?
At TA = 85 °C, the device's power dissipation must be derated linearly from 350 mW at 25 °C. With a thermal resistance of ~350 K/W (SOT23 on 15 mm × 15 mm 1 oz copper), maximum IC is approximately –0.75 A to maintain junction temperature below 150 °C under continuous DC conditions.
Can ZXTP2039FTC be used in avalanche mode?
No. ZXTP2039FTC is not rated or characterized for controlled avalanche operation. Its V(BR)CEV = –80 V is specified under variable-base bias but does not guarantee ruggedness under repetitive avalanche stress. Use only within SOA limits defined in the datasheet.
Is ZXTP2039FTC pin-compatible with SOT23-packaged NPN transistors like ZXTN2038F?
Yes-both devices use identical SOT23-3 footprints and pinout (Emitter-Base-Collector for ZXTP2039FTC; Collector-Base-Emitter for ZXTN2038F). However, polarity reversal means PCB layout must mirror the transistor orientation to maintain correct functional connection.
Does ZXTP2039FTC meet AEC-Q101 for automotive use?
No. ZXTP2039FTC is not AEC-Q101 qualified. It is intended for industrial, commercial, and computing applications. For automotive-grade PNP transistors, Diodes Incorporated offers the DXT3903Q series, which is fully AEC-Q101 certified and pin-compatible.
ZXTP2039FTC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 500mA, 5V
- Power - Max:
- 350 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
ZXTP2039FTC FAQ
1.How can I place an order for ZXTP2039FTC through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXTP2039FTC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXTP2039FTC reliable?
The price and inventory of ZXTP2039FTC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTP2039FTC is usually 5 days.
3.What payment methods are accepted for ZXTP2039FTC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTP2039FTC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXTP2039FTC?
ZXTP2039FTC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXTP2039FTC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXTP2039FTC?
For technical support, including ZXTP2039FTC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTP2039FTC requirements.
6.How does Aetrix verify that ZXTP2039FTC is sourced from the original manufacturer or authorized distributors?
All ZXTP2039FTC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTP2039FTC meets industry standards.
7.What is the process for return or replacement of ZXTP2039FTC?
All ZXTP2039FTC units undergo pre-shipment inspection (PSI). If there is an issue with ZXTP2039FTC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXTP2039FTC part is unused and in its original packaging.
Return procedure for ZXTP2039FTC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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