Diodes Incorporated ZXTP23140BFHTA

Overview

ZXTP23140BFHTA from Diodes Incorporated (formerly Zetex Semiconductors) is a PNP medium-power bipolar junction transistor in SOT23 package, rated for V(BR)CEX > −160 V, IC(CONT) = −2.5 A, RCE(sat) = 76 mΩ typical, VCE(sat) < −95 mV at −1 A, and PD = 1.25 W on 50 mm × 50 mm PCB. It serves as a high-voltage, high-current switching element in DC–DC converters and motor drive circuits.

For engineers reviewing the ZXTP23140BFHTA datasheet, ZXTP23140BFHTA pinout, ZXTP23140BFHTA application, or ZXTP23140BFHTA equivalent, key selection criteria include its −160 V blocking capability, low saturation voltage under high current, thermal performance on defined PCB copper area, and suitability for high-side switch topologies requiring robust avalanche margin.

Technical Context

This PNP transistor employs an advanced epitaxial process enabling high forward-blocking voltage (V(BR)CEX = −160 V min) and low saturation resistance. Its static current gain (hFE = 40–100 at IC = −2.5 A) supports stable base-driven switching with moderate drive requirements.

Thermal design is tightly coupled to PCB layout: RJA drops from 171 °C/W (15 mm × 15 mm, 1 oz Cu) to 69 °C/W (50 mm × 50 mm, 2 oz Cu), enabling sustained 1.25 W dissipation only with adequate copper area. Switching times (ton = 132.4 ns, toff = 345.5 ns) reflect optimized charge storage for medium-speed power control.

Key Specifications

Pinout & Package

SOT23-3 (TO-236AB) package: compact 3-lead surface-mount outline with standardized footprint (2.67–3.05 mm length, 1.20–1.40 mm width, 0.95 mm nominal lead pitch). Thermal pad not present; heatsinking relies entirely on PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Compared with ZXTP23140BFHTA, ZXTP2012GTA offers lower cost and similar SOT23 footprint but sacrifices 40 V blocking margin and 1 A current capacity; MMDT3906-7-F is functionally incompatible for power roles due to order-of-magnitude lower ratings.

Availability

ZXTP23140BFHTA is available at Aetrix Electronics and suitable for DC–DC converters, motor drive circuits, and high-side switches requiring stable component supply across industrial and embedded power designs.

Supply support for ZXTP23140BFHTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its portfolio of high-performance discrete semiconductors focused on power efficiency and reliability.

This device belongs to Zetex's "High Voltage PNP Transistor" product line, engineered specifically for space-constrained industrial power conversion where high breakdown voltage and low saturation loss are critical.

FAQ

What is the maximum safe operating voltage for ZXTP23140BFHTA in continuous DC applications?

The absolute maximum VCEO is −140 V, but continuous operation should be limited to ≤−100 V to maintain long-term reliability and account for voltage spikes. The higher V(BR)CEX rating of −160 V applies only under pulsed or specified test conditions with base-emitter resistive bias.

Can ZXTP23140BFHTA be driven directly from a 3.3 V microcontroller GPIO?

No-its base-emitter turn-on voltage is −0.78 V minimum, and it requires −250 mA base current for full saturation at −2.5 A collector current. A 3.3 V GPIO cannot sink that current; a dedicated base driver stage or level-shifting circuit is mandatory.

How does PCB copper area affect the thermal performance of ZXTP23140BFHTA?

RJA varies from 171 °C/W (15 mm × 15 mm, 1 oz Cu) to 69 °C/W (50 mm × 50 mm, 2 oz Cu). To achieve the rated 1.25 W dissipation, the device must be mounted on ≥50 mm × 50 mm PCB area with ≥2 oz copper; smaller layouts reduce safe operating power proportionally.

Is ZXTP23140BFHTA suitable for avalanche energy handling in inductive switching?

Yes-the datasheet specifies V(BR)CEX = −160 V under conditions simulating avalanche, and the device is characterized for inductive load switching in motor drive applications. However, single-pulse avalanche energy rating is not published; external snubbers are recommended for repetitive high-energy transients.