Diodes Incorporated ZXTP25015DFH
- Part No.:
- ZXTP25015DFH
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
ZXTP25015DFH.pdf
- Description:
- TRANS PNP 15V 4A SOT-23-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,673
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Product details
Overview
ZXTP25015DFH from Diodes Incorporated (formerly Zetex Semiconductors) is a PNP medium-power bipolar junction transistor in SOT23 package, rated for -15V VCEO, -4A IC(cont), 1.25W PD on 50mm×50mm PCB, and -55mV VCE(sat) @ -1A/-100mA, used in high-side driver and MOSFET/IGBT gate drive circuits.
For engineers reviewing the ZXTP25015DFH datasheet, ZXTP25015DFH pinout, ZXTP25015DFH application, or ZXTP25015DFH equivalent, key selection criteria include verified saturation voltage at high current, thermal derating behavior on defined PCB copper area, reverse blocking capability (VECO = -3V), and complementary pairing with ZXTN25015DFH.
Technical Context
This PNP transistor employs an advanced epitaxial process to achieve low VCE(sat) (-55mV typ. @ -1A/-100mA) and high DC current gain (hFE = 300–900 at -10mA). Its -15V forward blocking (VCEO) and -3V reverse blocking (VECO) ratings support bidirectional switching roles in gate drive and load switch topologies.
Thermal performance is explicitly characterized across four PCB mounting conditions: RJA ranges from 171°C/W (15mm×15mm, 1oz Cu) to 69°C/W (50mm×50mm, 2oz Cu), enabling precise junction temperature estimation under real layout constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -15 V - Maximum collector-emitter voltage before breakdown in normal forward-active operation |
| IC(cont) | -4 A - Continuous collector current rating with 1.25W dissipation on 50mm×50mm/2oz Cu PCB |
| VCE(sat) | -55 mV @ -1A/-100mA - Confirmed low saturation voltage enabling <0.055W conduction loss at 1A |
| VECO | -3 V - Reverse emitter-collector blocking capability, critical for high-side switch flyback handling |
| hFE | 90–900 - DC current gain range spanning -4A to -10mA operating points, supporting wide base drive flexibility |
| fT | 295 MHz - Transition frequency confirming suitability for fast-switching gate drive up to ~100MHz edge rates |
| RJA | 69 °C/W - Minimum junction-to-ambient thermal resistance achievable with optimized 50mm×50mm copper pour |
Pinout & Package
SOT23-3 (TO-236AB) package: compact 2.80–3.04 mm × 2.10–2.64 mm footprint, 1.12 mm max height, 3-lead surface-mount outline with gull-wing leads. Standard JEDEC MO-203AA compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | E | Current source terminal in PNP configuration; connects to positive rail in high-side switch |
| 2 (Base) | B | Control input requiring negative current injection to saturate; compatible with standard logic-level drivers |
| 3 (Collector) | C | Output node tied to load; reverse-biased during off-state to block -15V forward and -3V reverse voltage |
Key Features
| Feature | Design Value |
|---|---|
| High power dissipation in SOT23 | 1.25W on 50mm×50mm/2oz Cu - Enables discrete PNP switching without TO-220 or DPAK in space-constrained designs |
| Low VCE(sat) | -55mV @ -1A/-100mA - Reduces conduction loss by >40% vs. typical SOT23 PNP transistors (> -100mV) |
| Complementary pairing | Matched with ZXTN25015DFH NPN - Supports push-pull, H-bridge, and totem-pole output stages with balanced VCE(sat) and hFE |
| High peak current capability | -10A ICM - Supports short-duration surge loads in motor commutation and inductive load switching |
Applications
| MOSFET Gate Driver | DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Driving the gate of N-channel power MOSFETs in synchronous buck or half-bridge converters. IC Role / Device Role / Timing Role: PNP active pull-up stage providing fast, low-loss turn-on of the high-side MOSFET gate. Use Value: -55mV VCE(sat) minimizes gate drive voltage drop, preserving full VGS margin for reliable MOSFET enhancement. | Use Scenario: Replacing integrated high-side switches in isolated or high-voltage DC-DC modules where external control is required. IC Role / Device Role / Timing Role: Discrete high-side load switch controlling power delivery to downstream rails or peripherals. Use Value: -15V VCEO and -3V VECO enable safe operation across 12V automotive and industrial bus voltages with transient tolerance. |
| IGBT Base Drive | Motor Phase Control |
Use Scenario: Providing base current to PNP IGBTs or as part of Darlington driver stages in motor inverters. IC Role / Device Role / Timing Role: Medium-power current amplifier stage delivering controlled turn-on base charge to IGBT gates. Use Value: 295MHz fT and 300–900 hFE ensure sufficient bandwidth and gain margin for sub-100ns switching transitions. | Use Scenario: Controlling individual phases in brushed DC or stepper motor drivers where independent high-side current sourcing is needed. IC Role / Device Role / Timing Role: High-current PNP switch sourcing up to -4A per phase into motor windings. Use Value: 1.25W PD rating supports continuous 1A+ phase current with adequate PCB copper, avoiding thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP medium-power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTP2012Z | VCEO = -20V, VCE(sat) = -120mV @ -1A/-100mA, PD = 1.0W | Higher voltage rating but higher saturation loss; lower power dissipation limit | Select when >-15V blocking is required and thermal margin allows higher VCE(sat) penalty |
| MMBT4403 | VCEO = -40V, VCE(sat) = -750mV @ -500mA/-50mA, PD = 350mW | Higher voltage rating but significantly higher saturation voltage and lower current/power capability | Select only for low-current (<500mA), high-voltage signal switching where thermal budget is not constrained |
Compared with ZXTP25015DFH, ZXTP2012Z trades lower VCE(sat) for higher VCEO and reduced thermal capacity, while MMBT4403 offers wider voltage margin at the cost of 13× higher conduction loss and 3.6× lower power handling-making ZXTP25015DFH optimal for high-efficiency, medium-current, space-limited gate drive.
Availability
ZXTP25015DFH is available at Aetrix Electronics and suitable for MOSFET gate driving, DC-DC converter high-side switching, and motor phase control requiring stable component supply and guaranteed long-term availability.
Supply support for ZXTP25015DFH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated acquired Zetex Semiconductors in 2008 and integrates its high-performance analog and discrete portfolio into broad-based power management and signal solutions.
ZXTP series PNP transistors were developed specifically for high-efficiency, high-density power switching applications including gate drive, load switching, and motor control-emphasizing low saturation voltage and robust thermal performance in SOT23.
FAQ
What is the maximum continuous collector current for ZXTP25015DFH under standard PCB conditions?
The maximum continuous collector current is -4A, validated at 1.25W power dissipation on a 50mm×50mm×1.6mm FR4 PCB with high-coverage single-sided 2oz copper. Derating begins at 9.6mW/°C above 25°C ambient, requiring thermal design verification for sustained operation above 85°C junction temperature.
Can ZXTP25015DFH be used as a direct replacement for ZXTN25015DFH in complementary circuits?
No-ZXTP25015DFH is a PNP device, while ZXTN25015DFH is its complementary NPN counterpart. They are designed to operate together in push-pull or totem-pole configurations, not as substitutes. Swapping them would invert circuit functionality and likely cause failure due to polarity mismatch in biasing and current flow.
What is the significance of the -3V VECO rating in practical circuit design?
The -3V emitter-collector reverse breakdown rating defines the maximum reverse voltage the device can block when the emitter is biased positive relative to the collector-critical in high-side switch configurations where inductive kickback or bus transients may reverse-bias the E-C junction. Exceeding this rating risks avalanche conduction and potential device failure.
How does the SOT23 package achieve 1.25W power dissipation despite its small size?
The 1.25W rating is achieved only with aggressive PCB thermal design: a 50mm×50mm copper pour with 2oz thickness and high coverage reduces RJA to 69°C/W. On smaller or thinner copper areas, power rating drops to 1.05W (25mm×25mm/2oz) or 0.73W (15mm×15mm/1oz), requiring layout-aware derating in actual designs.
ZXTP25015DFH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 15 V
- Vce Saturation (Max) @ Ib, Ic:
- 220mV @ 500mA, 5A
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 300 @ 10mA, 2V
- Power - Max:
- 1.25 W
- Frequency - Transition:
- 295MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
ZXTP25015DFH FAQ
1.How can I place an order for ZXTP25015DFH through Aetrix?
Please submit a Request for Quotation (RFQ) for ZXTP25015DFH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ZXTP25015DFH reliable?
The price and inventory of ZXTP25015DFH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTP25015DFH is usually 5 days.
3.What payment methods are accepted for ZXTP25015DFH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTP25015DFH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ZXTP25015DFH?
ZXTP25015DFH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ZXTP25015DFH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ZXTP25015DFH?
For technical support, including ZXTP25015DFH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTP25015DFH requirements.
6.How does Aetrix verify that ZXTP25015DFH is sourced from the original manufacturer or authorized distributors?
All ZXTP25015DFH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTP25015DFH meets industry standards.
7.What is the process for return or replacement of ZXTP25015DFH?
All ZXTP25015DFH units undergo pre-shipment inspection (PSI). If there is an issue with ZXTP25015DFH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ZXTP25015DFH part is unused and in its original packaging.
Return procedure for ZXTP25015DFH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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