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Diodes Incorporated ZXTP25015DFHTA

Part No.:
ZXTP25015DFHTA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixZXTP25015DFHTA.pdf
Description:
TRANS PNP 15V 4A SOT-23-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:5,409

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Product details

Overview

ZXTP25015DFHTA from Diodes Incorporated (formerly Zetex Semiconductors) is a PNP medium-power bipolar junction transistor in SOT23 package, rated for −15 V VCEO, −4 A continuous collector current, 1.25 W power dissipation on 50 mm × 50 mm PCB, and 33 mΩ RCE(sat) at IC = −1 A. It serves as a high-side switch or gate driver in DC-DC converters and motor control circuits.

For engineers reviewing the ZXTP25015DFHTA datasheet, ZXTP25015DFHTA pinout, ZXTP25015DFHTA application, or ZXTP25015DFHTA equivalent, key selection criteria include verified −15 V blocking capability, sub-55 mV VCE(sat) at 1 A, thermal resistance of 100 °C/W under standard layout, and compatibility with SOT23 footprint constraints in space-constrained power stages.

Technical Context

This PNP BJT employs advanced silicon process and optimized SOT23 packaging to sustain −4 A continuous collector current with low saturation voltage. Its −15 V VCEO and −3 V VECO ratings support operation in high-side switching topologies where reverse emitter-collector stress occurs during turn-off transients.

The device delivers hFE = 90–900 across IC = −10 mA to −4 A, enabling robust base drive design for both linear and saturated switching modes. Transition frequency fT = 295 MHz confirms suitability for fast-switching applications up to several hundred kHz without significant gain roll-off.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−15 V: Maximum safe collector-emitter voltage in open-base configuration, defining high-side switch voltage headroom
IC(cont)−4 A: Continuous collector current rating on 50 mm × 50 mm PCB, setting maximum steady-state load drive capacity
VCE(sat)−55 mV @ −1 A/−100 mA: Low conduction loss enabling <0.055 W dissipation per switch event at nominal load
PD1.25 W: Power dissipation limit on 50 mm × 50 mm FR4 board, directly constraining thermal pad area requirements
fT295 MHz: Small-signal current gain bandwidth, supporting fast switching with minimal delay in gate drive paths
hFE90–900: Wide DC current gain range across operating current, allowing flexible base resistor selection for varied drive strength
RJA100 °C/W: Junction-to-ambient thermal resistance on standard PCB, used to calculate max junction temperature rise under load

Pinout & Package

SOT23-3 plastic surface-mount package with gull-wing leads; 2.80–3.04 mm length, 1.20–1.40 mm width, 1.12 mm max height; JEDEC TO-236AB compliant.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Emitter terminalConnected to positive rail in high-side switch configuration; carries full load current and defines reverse blocking path
2 (Base)Control inputReceives negative base current to saturate transistor; requires external current-limiting resistor for drive circuit protection
3 (Collector)Switched outputConnected to load; voltage swings between ground and VIN during switching; must withstand −15 V transient stress

Key Features

FeatureDesign Value
High power dissipation in SOT231.25 W on 50 mm × 50 mm PCB - enables use in compact DC-DC modules without thermal derating penalties
Low VCE(sat)−55 mV @ −1 A - reduces conduction loss by >40% vs. typical SOT23 PNP transistors rated at −100 mV
15 V forward blockingVCEO = −15 V - supports direct interface with 12 V systems and margin for transient overvoltage
3 V reverse blockingVECO = −3 V - ensures safe operation during inductive flyback in high-side configurations with freewheeling diodes
Fast switching speedtf = 51.7 ns, ts = 196 ns - minimizes dead-time losses in synchronous buck or half-bridge drivers

Applications

MOSFET Gate DriverDC-DC Converter High-Side Switch

Use Scenario: Driving N-channel MOSFET gates in non-isolated buck regulators where bootstrap supply is unavailable.

IC Role / Device Role / Timing Role: PNP BJT configured as active pull-up stage to rapidly charge gate capacitance during turn-on.

Use Value: −55 mV VCE(sat) ensures <55 mW conduction loss at 1 A gate peak current, improving overall converter efficiency.

Use Scenario: High-side switch in 12 V automotive DC-DC pre-regulator feeding downstream point-of-load converters.

IC Role / Device Role / Timing Role: Main power switch controlling input rail connection to secondary regulation stage.

Use Value: −15 V VCEO provides 3 V margin above 12 V nominal rail, accommodating load-dump transients per ISO 7637-2.

Brushed DC Motor DriverLoad Disconnect Switch

Use Scenario: H-bridge upper-leg switch for bidirectional 12 V brushed motor control in industrial actuators.

IC Role / Device Role / Timing Role: High-side current path element enabling forward/reverse polarity control via complementary PNP/NPN pairing.

Use Value: hFE ≥ 90 at −4 A allows stable base drive with ≤44 mA IB, simplifying microcontroller GPIO interface.

Use Scenario: Controlled power disconnect for safety-critical subsystems (e.g., battery management, sensor arrays) in portable medical devices.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays, providing fast, bounce-free, low-leakage isolation.

Use Value: ICBO < −20 nA at −12 V ensures <0.24 nW standby leakage, extending battery life in always-on monitoring circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZXTN25015DFHTANPN complement; identical package, same VCEO/IC ratings but opposite polarityUsed in low-side switching or complementary push-pull stages instead of high-sideSelect when circuit topology requires NPN placement or dual-NPN/NPN-PNP matched pairs
MMBT3906LT1GLower IC(cont) = −200 mA, VCEO = −40 V, VCE(sat) = −400 mV @ −10 mA - not suitable for >500 mA loadsLimited to signal-level switching or bias networks, not power switchingOnly acceptable for low-current auxiliary functions; cannot replace ZXTP25015DFHTA in main power paths

Compared with ZXTN25015DFHTA and MMBT3906LT1G, ZXTP25015DFHTA uniquely combines −4 A current handling, −15 V blocking, and −55 mV saturation voltage in SOT23 - making it irreplaceable for high-current, space-constrained high-side switching where thermal and voltage margins are critical.

Availability

ZXTP25015DFHTA is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and high-side gate drivers requiring stable component supply across industrial, automotive, and medical electronics programs.

Supply support for ZXTP25015DFHTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its portfolio of high-performance discrete semiconductors focused on power efficiency and miniaturization.

This device belongs to Zetex's medium-power bipolar transistor product line, engineered specifically for high-density power management in space-limited applications such as portable power supplies and embedded motor controllers.

FAQ

What is the maximum allowable PCB copper area to achieve the 1.25 W power rating?

The 1.25 W rating is specified for mounting on a 50 mm × 50 mm × 1.6 mm FR4 PCB with high-coverage single-sided 2 oz copper. Reducing copper area increases thermal resistance beyond 100 °C/W, requiring derating per the 9.6 mW/°C linear factor. Layout verification using thermal simulation is recommended for non-standard board sizes.

Can ZXTP25015DFHTA be used in parallel for higher current handling?

No - this PNP BJT lacks inherent current-sharing characteristics due to negative temperature coefficient of VBE(sat). Parallel operation risks thermal runaway unless actively balanced with individual emitter resistors and matched hFE bins. For >4 A, consider dedicated power MOSFETs or integrated high-side switches.

Is the −3 V VECO rating sufficient for driving N-channel MOSFET gates?

Yes - when used as a gate pull-up, the emitter connects to VCC and collector to MOSFET gate. During turn-off, VEC reaches ~VGS(th) (typically 1–3 V), staying within the −3 V VECO limit. Exceeding this requires clamping or alternative topology.

Does the device meet AEC-Q101 for automotive use?

No - ZXTP25015DFHTA is not AEC-Q101 qualified. While its −55 to +150 °C operating range overlaps automotive requirements, qualification testing (including HTOL, temperature cycling, and ESD) was not performed. For automotive applications, Diodes Incorporated offers AEC-Q101 variants such as DZT5551Q.

ZXTP25015DFHTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
15 V
Vce Saturation (Max) @ Ib, Ic:
220mV @ 500mA, 5A
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 10mA, 2V
Power - Max:
1.25 W
Frequency - Transition:
295MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

ZXTP25015DFHTA FAQ

1.How can I place an order for ZXTP25015DFHTA through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTP25015DFHTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTP25015DFHTA reliable?

The price and inventory of ZXTP25015DFHTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTP25015DFHTA is usually 5 days.

3.What payment methods are accepted for ZXTP25015DFHTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTP25015DFHTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTP25015DFHTA?

ZXTP25015DFHTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTP25015DFHTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTP25015DFHTA?

For technical support, including ZXTP25015DFHTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTP25015DFHTA requirements.

6.How does Aetrix verify that ZXTP25015DFHTA is sourced from the original manufacturer or authorized distributors?

All ZXTP25015DFHTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTP25015DFHTA meets industry standards.

7.What is the process for return or replacement of ZXTP25015DFHTA?

All ZXTP25015DFHTA units undergo pre-shipment inspection (PSI). If there is an issue with ZXTP25015DFHTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTP25015DFHTA part is unused and in its original packaging.

Return procedure for ZXTP25015DFHTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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