Diodes Incorporated ZXTP25100BFHTA

Overview

ZXTP25100BFHTA from Diodes Incorporated is a 100V PNP medium-power bipolar junction transistor in SOT23 package, rated for −2A continuous collector current, −100V collector-emitter blocking voltage, and 1.25W power dissipation at 25°C ambient on 50mm×50mm 2oz copper PCB. It delivers V_CE(SAT) ≤ −130mV at −1A/−100mA drive and exhibits R_CE(SAT) = 108mΩ typical, making it suitable for high-efficiency MOSFET/IGBT gate driving and motor control stages.

For engineers reviewing the ZXTP25100BFHTA datasheet, ZXTP25100BFHTA pinout, ZXTP25100BFHTA application, or ZXTP25100BFHTA equivalent, key selection criteria include verified −100V V_CEO, low saturation resistance under −2A load, AEC-Q101 qualification, thermal performance on defined PCB layouts, and complementary pairing with ZXTN25100BFH.

Technical Context

This PNP transistor operates in linear and switching modes with guaranteed BV_CEO ≥ −100V and BVECO ≥ −7V, enabling robust reverse-biased emitter-base operation in high-side driver configurations. Its f_T = 200MHz supports fast turn-on (t_ON = 31ns) and controlled turn-off (t_OFF = 384ns) under −10V V_CC and −500mA load conditions.

Thermal design is defined by three validated R_θJA values: 171°C/W (15mm×15mm 1oz), 100°C/W (50mm×50mm 2oz), and 69°C/W (short-pulse, 25mm×25mm 2oz). Junction-to-lead thermal resistance is fixed at 74.95°C/W, supporting solder-point temperature monitoring in compact power stages.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic case, 0.008g weight, UL 94V-0 rated molding compound, matte tin-plated leads solderable per MIL-STD-202 Method 208.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with ZXTP2012GTA and MMDT3906-7-F, ZXTP25100BFHTA uniquely combines −100V blocking, −2A current, and AEC-Q101 qualification-enabling direct use in automotive gate drivers and industrial 48V motor controls where both voltage headroom and thermal robustness are mandatory.

Availability

ZXTP25100BFHTA is available at Aetrix Electronics and suitable for MOSFET/IGBT gate driving, DC-DC converter high-side switching, and brushed DC motor control requiring stable component supply across automotive, industrial, and power electronics programs.

Supply support for ZXTP25100BFHTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

This device belongs to Diodes' AEC-Q101-qualified medium-power transistor family, engineered for robust switching in automotive body electronics, industrial motor interfaces, and high-efficiency power conversion stages.

FAQ

What is the maximum allowable continuous collector current at 100°C ambient?

At T_A = +100°C, the maximum continuous collector current is −1.2A, derived from linear derating of the 1.25W power rating using R_θJA = 100°C/W (50mm×50mm 2oz copper). This assumes no additional heatsinking and accounts for junction temperature limit of +150°C.

Can ZXTP25100BFHTA be used in parallel for higher current handling?

No-this PNP transistor lacks built-in emitter ballasting or matched h_FE binning for reliable current sharing. Parallel operation risks thermal runaway due to negative temperature coefficient of V_BE(SAT); discrete current-sharing resistors or dedicated driver ICs are required for multi-device configurations.

Is the SOT23 package lead finish compatible with lead-free reflow profiles?

Yes-the matte tin-plated leads meet IPC-J-STD-020 requirements for lead-free soldering, supporting peak reflow temperatures up to 260°C. Moisture sensitivity level is rated at Level 1 (unlimited floor life), eliminating bake requirements prior to assembly.

How does the −7V V_ECO rating impact relay driver design?

The −7V emitter-collector reverse breakdown voltage defines the maximum flyback voltage the transistor can safely clamp during relay coil de-energization. A freewheeling diode must be placed across the coil to limit reverse V_EC to ≤ −7V, preventing avalanche failure during inductive turn-off transients.