Diodes Incorporated ZXTP25140BFHQTA

Overview

ZXTP25140BFHQTA from Diodes Incorporated is a 140V PNP medium-power bipolar junction transistor in SOT23 package, rated for -1A continuous collector current, -140V V_CEO, and -260mV V_CE(sat) at -1A. It serves as a high-side switch in automotive DC-DC converters, meeting AEC-Q101 reliability requirements with 180mΩ R_CE(sat) and 75MHz f_T.

For engineers reviewing the ZXTP25140BFHQTA datasheet, ZXTP25140BFHQTA pinout, ZXTP25140BFHQTA application, or ZXTP25140BFHQTA equivalent, key selection criteria include forward-blocking voltage (-180V), thermal resistance (69°C/W on 50mm×50mm 2oz copper), ESD robustness (4kV HBM), and automotive qualification status.

Technical Context

This PNP BJT operates in linear or switching mode with base-controlled current amplification (h_FE = 20–30 at -1A). Its -140V V_CEO and -180V V_CEX support high-voltage blocking in boost and flyback topologies, while low V_CE(sat) minimizes conduction loss during active switching.

The device uses a planar epitaxial structure with optimized doping profiles to achieve stable gain across temperature (-55°C to +150°C) and low leakage (ICEX < -100nA). Thermal performance is defined for three PCB mounting conditions, with R_θJA ranging from 69°C/W (50mm×50mm 2oz copper) to 171°C/W (15mm×15mm 1oz copper).

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic package (2.40mm × 1.30mm × 0.90mm), UL 94V-0 rated, 0.008g weight, matte tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Compared with ZXTP2014F and MMDT3906-7-F, ZXTP25140BFHQTA uniquely combines AEC-Q101 qualification, -140V blocking, and -260mV saturation in SOT23-enabling compact, reliable high-side switching where voltage margin and automotive compliance are mandatory.

Availability

ZXTP25140BFHQTA is available at Aetrix Electronics and suitable for automotive DC-DC converters, high-side load switches, and industrial motor drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for ZXTP25140BFHQTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The ZXTP series targets automotive and industrial power switching applications, emphasizing high-voltage PNP transistors with AEC-Q101 qualification, low saturation, and thermally efficient SOT23 packaging for space-constrained modules.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The ZXTP25140BFHQTA has an operating junction temperature range of -55°C to +150°C. For continuous DC operation, thermal design must ensure steady-state T_J remains ≤150°C using the applicable R_θJA value (e.g., 69°C/W for 50mm×50mm 2oz copper). Derating begins at +25°C ambient per published curves.

Can this transistor be used in avalanche mode?

No-ZXTP25140BFHQTA is not rated or characterized for repetitive avalanche operation. Its absolute maximum ratings specify only forward and reverse blocking voltages (V_CEX, V_CEO, V_EBO) without energy or pulse-width limits for avalanche. Use external clamping or snubbers for inductive switching.

Is the SOT23 footprint compatible with standard pick-and-place equipment?

Yes-the SOT23 package conforms to JEDEC MO-178AA standards with 0.95mm lead pitch and defined pad layout (AP02001). Matte tin-plated leads meet MIL-STD-202 solderability requirements, supporting both reflow and wave soldering in high-volume automotive assembly lines.

How does the h_FE variation affect base drive design?

h_FE ranges from 20–30 at -1A, so base current must be designed for worst-case gain: IB ≥ |I_C| / 20 = 50mA minimum for 1A collector current. A 100mA drive ensures saturation across temperature and process variation, consistent with the -260mV V_CE(sat) spec.