Diodes Incorporated ZXTP5401GTA

Overview

ZXTP5401GTA from Diodes Incorporated (formerly Zetex Semiconductors) is a high-voltage PNP bipolar junction transistor in SOT223 package, rated for V_CEO = −150 V, I_C(cont) = −600 mA, and P_D = 2 W. It delivers h_FE = 50–240 at I_C = −1 to −50 mA and operates across −55°C to +150°C. Used in high-voltage linear amplification and switching stages of industrial power supplies.

For engineers reviewing the ZXTP5401GTA datasheet, ZXTP5401GTA pinout, ZXTP5401GTA application, or ZXTP5401GTA equivalent, key selection criteria include verified V_CEO ≥ −150 V, SOT223 thermal performance (R_JA = 62.5°C/W), h_FE stability over I_C, and complementary pairing with ZXTN5551G for push-pull topologies.

Technical Context

This PNP transistor employs epitaxial planar construction optimized for high-voltage blocking and low saturation voltage. Its BV_CBO = −160 V and BV_EBO = −5 V define safe operating limits under open-base and open-collector conditions respectively.

Designed for DC-coupled amplification and medium-speed switching (t_f = 275 ns, f_T = 100 MHz), it supports linear operation with V_CE(sat) = −200 mV at I_C = −10 mA / I_B = −1 mA and exhibits CO_BO = 6 pF at V_CB = −10 V for predictable frequency response.

Key Specifications

Pinout & Package

SOT223 package: surface-mount, 4-pin (3 active + tab), thermally enhanced with exposed emitter pad. Dimensions per JEDEC MO-178: 6.5 × 3.5 × 1.8 mm (L × W × H), 2.3 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage PNP transistor applications.

Compared with MJD127G and BCP53-16, ZXTP5401GTA provides 50–105 V higher V_CEO headroom and 0.5 W greater power dissipation, making it uniquely suited for 100–150 V industrial systems where voltage margin and thermal robustness are non-negotiable.

Availability

ZXTP5401GTA is available at Aetrix Electronics and suitable for industrial power supply output stages, high-voltage linear amplifiers, DC motor driver high-side switches, and overvoltage protection circuits requiring stable component supply and long-term manufacturability.

Supply support for ZXTP5401GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex Semiconductors in 2008 and maintains its high-performance discrete portfolio with ISO 9001/TS16949 certification and RoHS-compliant manufacturing.

This device belongs to Zetex's high-voltage bipolar transistor product line, engineered specifically for industrial and automotive power conversion where ruggedness, voltage margin, and thermal reliability are critical.

FAQ

What is the maximum safe operating voltage for ZXTP5401GTA in a switching application?

The absolute maximum V_CEO is −150 V with base open. For reliable switching, derate to ≤−120 V under transient conditions per Zetex application guidance. At V_CE = −120 V, ICBO remains <−50 nA, ensuring minimal leakage-induced false triggering in high-impedance gate drives.

Can ZXTP5401GTA be used in parallel for higher current handling?

No-its negative temperature coefficient of V_BE(sat) causes current hogging. At I_C = −50 mA, V_BE(sat) drops −2.5 mV/°C; unequal thermal coupling leads to >70% current imbalance above 60°C ambient. Use single-device designs or external ballast resistors if paralleling is unavoidable.

Is the SOT223 tab electrically isolated from the emitter?

No-the metal tab is internally bonded to the emitter (Pin 1). It must be connected to the emitter net on PCB and may serve as primary thermal path. Isolation requires insulating thermal pads or dielectric coatings, which increase R_JA by ≥15°C/W and void Zetex's thermal ratings.

How does h_FE vary with temperature and collector current?

h_FE increases ~0.3%/°C from −55°C to 25°C, then decreases ~0.5%/°C above 25°C. At I_C = −50 mA, h_FE drops from 130 (25°C) to 95 (125°C). This trade-off necessitates bias network recalibration in high-temp environments to maintain Q-point stability.