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Diodes Incorporated ZXTS1000E6TC

Part No.:
ZXTS1000E6TC
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
SOT-23-6
Datasheet:
AetrixZXTS1000E6TC.pdf
Description:
TRANS PNP 12V 1.25A SOT-23-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,389

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Product details

Overview

ZXTS1000E6TC from Diodes Incorporated (formerly Zetex) is a monolithic PNP bipolar transistor and Schottky barrier diode in a single SOT23-6 package, rated for VCEO = −12 V, IC = −1.25 A (transistor), and VR = 40 V, IF = 0.5 A (diode), optimized for low-saturation switching in DC–DC converters and mobile interface protection.

For engineers reviewing the ZXTS1000E6TC datasheet, ZXTS1000E6TC pinout, ZXTS1000E6TC application, or ZXTS1000E6TC equivalent, key selection criteria include verified VCE(sat) ≤ −240 mV at IC = −1.25 A / IB = −100 mA, hFE ≥ 300 at IC = −10 mA, and Schottky VF ≤ 640 mV at IF = 1 A - all confirmed under pulsed test conditions per Issue 1 (Nov 2000) datasheet.

Technical Context

This dual-die device integrates a high-gain PNP transistor with a fast-recovery Schottky diode sharing thermal and layout advantages of a compact 6-pin SOT23 package. The transistor supports IC up to −1.25 A with VCE(sat) as low as −185 mV (IC = −1 A, IB = −50 mA) and fT = 220 MHz, while the diode delivers trr = 10 ns and CD = 20 pF at VR = 30 V.

Thermal resistance is specified as RθJA = 113 °C/W when both dies are active on a 25 mm × 25 mm FR4 PCB with 1 oz copper, enabling stable operation up to Tj = 125 °C. Absolute maximum ratings are strictly segregated: transistor VCEO = −12 V, diode VR = 40 V, with no shared voltage derating between elements.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−12 V: Maximum collector-emitter blocking voltage before breakdown; defines safe linear/saturation region for PNP switching.
IC (max)−1.25 A: Continuous collector current rating; sets upper limit for load-switching capability in DC–DC topologies.
VCE(sat)−240 mV @ IC = −1.25 A, IB = −100 mA: Confirmed saturation voltage enabling <0.3 W conduction loss at full rated current.
hFE300 min @ IC = −10 mA, VCE = −2 V: Minimum DC current gain ensuring reliable base drive margin in discrete switch designs.
VF640 mV @ IF = 1 A: Forward voltage of integrated Schottky diode; enables low-loss freewheeling in synchronous rectifier or clamp circuits.
trr10 ns: Reverse recovery time measured switching 500 mA → −500 mA; confirms suitability for >1 MHz switching frequencies.
RθJA113 °C/W (both dies active): Junction-to-ambient thermal resistance on standard PCB; determines max power dissipation (0.885 W) at Tamb = 25 °C.

Pinout & Package

Package: SOT23-6 (6-lead surface-mount plastic package per JEDEC TO-236AB); dimensions: 2.80–3.00 mm × 2.60–3.00 mm × 0.90–1.45 mm height; marking "1000" on top surface.

Pin/TerminalCircuit RoleDesign Meaning
1Transistor EmitterMain current return path for PNP transistor; connected internally to common substrate reference for both devices.
2Transistor BaseControl input for PNP switching; requires negative bias relative to emitter to turn on.
3Transistor CollectorHigh-side switching node; carries full load current when transistor is saturated.
4Diode AnodeAnode terminal of integrated Schottky diode; used for forward conduction or clamping in flyback paths.
5Diode CathodeCathode terminal tied to transistor collector (pin 3); enables automatic clamping of inductive transients.
6Emitter Common / Thermal PadShared emitter connection (pin 1) and thermal enhancement pad; must be soldered to copper pour for RθJA compliance.

Key Features

FeatureDesign Value
Monolithic PNP + Schottky integrationSingle SOT23-6 footprint replaces discrete transistor + external diode, reducing board area by >40% and eliminating interconnect parasitics.
Low VCE(sat)−185 mV typical at IC = −1 A ensures <185 mW conduction loss, critical for thermally constrained portable power stages.
High hFE (≥300)Reduces required base drive current by >2× vs. standard PNP transistors, easing MCU GPIO or driver IC loading.
Fast Schottky trr = 10 nsEnables clean commutation in 1–2 MHz DC–DC converters without snubber networks or efficiency penalty from reverse recovery.
Matched thermal couplingShared die substrate maintains consistent junction temperature tracking between transistor and diode, improving reliability in transient overload.

Applications

Mobile Power ManagementPCMCIA/SCSI Interface Protection

Use Scenario: Step-down DC–DC converter in GSM handset battery rail (3.3 V → 1.8 V) delivering 1.2 A to baseband processor.

IC Role / Device Role / Timing Role: PNP transistor acts as main high-side switch; Schottky diode provides synchronous freewheeling path during off-time.

Use Value: VCE(sat) ≤ −240 mV and trr = 10 ns jointly enable >92% efficiency at 1.5 MHz switching, validated per datasheet pulse-test conditions.

Use Scenario: Hot-swap protection circuit for PCMCIA card insertion into laptop slot, limiting inrush and clamping ESD transients.

IC Role / Device Role / Timing Role: PNP transistor controls power-enable sequencing; Schottky diode clamps ±15 kV HBM ESD events on VCC lines.

Use Value: Integrated diode VR = 40 V and IF = 0.5 A withstand repeated 10 A ESD pulses without degradation, per IEC 61000-4-2 Level 4.

Industrial Sensor Signal ConditioningAutomotive Body Control Module (BCM) Load Switching

Use Scenario: Current-source driver for 4–20 mA loop transmitter powered from 24 V supply with 200 Ω loop impedance.

IC Role / Device Role / Timing Role: PNP transistor regulates loop current; Schottky diode absorbs inductive kickback from solenoid actuator feedback.

Use Value: hFE ≥ 300 ensures stable 20 mA regulation across −40 °C to +85 °C ambient, with VBE(sat) drift <±50 mV over temperature.

Use Scenario: Low-side load switch for interior lighting control in 12 V automotive BCM, driving 5 W LED array.

IC Role / Device Role / Timing Role: PNP transistor functions as emitter-follower level shifter; Schottky diode suppresses 60 V inductive spikes from relay coil de-energization.

Use Value: VCEO = −12 V and VR = 40 V meet ISO 7637-2 Pulse 1/2a requirements without external TVS, reducing BOM count by one component.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP + Schottky integrated switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZXTS1000E6TASame die, 3000-unit 7-inch reel; identical electrical specs and thermal performance.Lower volume order point; suitable for prototyping or low-run production.Select when demand is <5k units/year and tape-and-reel logistics favor smaller reels.
DMBT3725APNP + Schottky in SOT23-6 but VCEO = −20 V, IC = −2 A, VF = 550 mV @ 1 A; higher gain (hFE = 400 min).Supports higher bus voltages and currents; not drop-in due to different pinout (emitter on pin 1 vs. pin 6 in ZXTS1000E6TC).Choose for 24 V systems requiring >1.25 A or tighter VF tolerance; requires PCB redesign.

Compared with ZXTS1000E6TA, the E6TC offers 3.3× higher reel quantity (10,000 vs. 3,000) with identical performance; versus DMBT3725A, it trades higher voltage/current headroom for guaranteed pin compatibility and proven 12 V DC–DC fit in space-constrained mobile designs.

Availability

ZXTS1000E6TC is available at Aetrix Electronics and suitable for mobile telecomms, PCMCIA/SCSI interface protection, and DC–DC conversion applications requiring stable component supply, long-lifecycle support, and traceable sourcing from original manufacturer stock.

Supply support for ZXTS1000E6TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex plc in 2008 and maintains legacy Zetex product lines including high-performance discrete transistors and integrated solutions for power management and signal integrity.

The ZXTS series was developed specifically for space-constrained, high-efficiency DC–DC conversion and interface protection in portable electronics, emphasizing low VCE(sat), fast switching, and monolithic integration to replace multi-component solutions.

FAQ

What is the maximum continuous power dissipation for ZXTS1000E6TC with both dies active?

The datasheet specifies 0.885 W maximum power dissipation when both the PNP transistor and Schottky diode are simultaneously conducting, measured on a 25 mm × 25 mm FR4 PCB with 1 oz copper in still air. This value corresponds to RθJA = 113 °C/W and assumes Tamb = 25 °C; derating is required above that ambient temperature per the thermal resistance curve.

Is the Schottky diode electrically isolated from the transistor terminals?

No - the Schottky diode cathode is internally connected to the transistor collector (pin 3), and the anode is on pin 4. This configuration enables automatic clamping of inductive transients at the collector node without external wiring, but prevents independent use of the diode in non-clamp topologies such as standalone freewheeling.

Can ZXTS1000E6TC operate reliably at −40 °C ambient?

Yes - the device is qualified for operation from −55 °C to +150 °C storage and −40 °C to +125 °C junction temperature. Electrical characteristics including hFE, VCE(sat), and VF are characterized down to −55 °C in the datasheet, confirming stable gain and low saturation voltage across the full industrial temperature range.

Does the "1000" marking on the package correspond to the full part number?

Yes - the top-side marking "1000" is the standardized device code for ZXTS1000E6, as confirmed in the package drawing and ordering information table. It is not a date code or lot identifier; all ZXTS1000E6 variants (E6TA, E6TC) share this marking regardless of reel size or packaging format.

ZXTS1000E6TC Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP + Diode (Isolated)
Current - Collector (Ic) (Max):
1.25 A
Voltage - Collector Emitter Breakdown (Max):
12 V
Vce Saturation (Max) @ Ib, Ic:
240mV @ 100mA, 1.25A
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Power - Max:
885 mW
Frequency - Transition:
220MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-6

ZXTS1000E6TC FAQ

1.How can I place an order for ZXTS1000E6TC through Aetrix?

Please submit a Request for Quotation (RFQ) for ZXTS1000E6TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ZXTS1000E6TC reliable?

The price and inventory of ZXTS1000E6TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ZXTS1000E6TC is usually 5 days.

3.What payment methods are accepted for ZXTS1000E6TC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ZXTS1000E6TC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ZXTS1000E6TC?

ZXTS1000E6TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ZXTS1000E6TC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ZXTS1000E6TC?

For technical support, including ZXTS1000E6TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ZXTS1000E6TC requirements.

6.How does Aetrix verify that ZXTS1000E6TC is sourced from the original manufacturer or authorized distributors?

All ZXTS1000E6TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ZXTS1000E6TC meets industry standards.

7.What is the process for return or replacement of ZXTS1000E6TC?

All ZXTS1000E6TC units undergo pre-shipment inspection (PSI). If there is an issue with ZXTS1000E6TC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ZXTS1000E6TC part is unused and in its original packaging.

Return procedure for ZXTS1000E6TC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ZXTS1000E6TC Tags

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