Diodes Incorporated ZXTS1000NE6TA

Overview

ZXTS1000NE6TA from Diodes Incorporated (formerly Zetex) is a monolithic PNP bipolar transistor and Schottky barrier diode in a single SOT-23-6 package, rated for V_CEO = −12 V, I_C = −1.25 A (transistor), and V_R = 40 V, I_F = 0.5 A (diode). It delivers low V_CE(sat) down to −110 mV at I_C = −0.5 A / I_B = −10 mA and fast switching with t_on = 50 ns, t_off = 135 ns - used in DC-DC converter synchronous rectification and mobile telecomms power management.

For engineers reviewing the ZXTS1000NE6TA datasheet, ZXTS1000NE6TA pinout, ZXTS1000NE6TA application, or ZXTS1000NE6TA equivalent, key selection criteria include confirmed dual-die integration, verified SOT-23-6 terminal mapping, measured V_BE(sat) ≤ −1.1 V at I_C = −1.25 A, Schottky V_F ≤ 460 mV at I_F = 250 mA, and thermal resistance R_θJA = 113 °C/W when both dies are active.

Technical Context

This dual-function device integrates a high-gain (h_FE ≥ 300 at I_C = −10 mA) PNP switching transistor and a low-V_F, fast-recovery (t_rr = 10 ns) Schottky diode on one die substrate. The transistor operates with forced β = 10–100 in saturation, while the diode exhibits C_D = 20 pF at V_R = 30 V and I_R ≤ 40 µA at V_R = 30 V.

Thermal design must account for shared junction-to-ambient path: R_θJA degrades from 138 °C/W (single die active) to 113 °C/W (both dies active) on 25 mm × 25 mm FR4 with 1 oz copper. Safe operating area is defined up to T_j = 125 °C with non-repetitive I_FSM = 6.75 A (t ≤ 100 µs).

Key Specifications

Pinout & Package

Package: SOT-23-6 (6-lead surface-mount plastic package per JEDEC TO-236AB); dimensions match Zetex SOT23-6 ISSUE 1 drawing (D = 2.80–3.00 mm, E = 2.60–3.00 mm, e = 0.95 mm pitch).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-function PNP + Schottky switching applications.

Compared with DMT3005LSD-7 and NSV12201MT1G, ZXTS1000NE6TA offers the lowest verified V_CE(sat) (−110 mV) and fastest diode t_rr (10 ns) in its voltage class, making it optimal for space-constrained, high-frequency DC-DC stages where thermal density and switching loss are dominant constraints.

Availability

ZXTS1000NE6TA is available at Aetrix Electronics and suitable for mobile telecomms power switching, PCMCIA/SCSI hot-swap protection, and DC-DC synchronous rectification requiring stable component supply and consistent SOT-23-6 form factor.

Supply support for ZXTS1000NE6TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated acquired Zetex plc in 2008 and maintains its high-performance discrete portfolio for precision analog and power management applications.

ZXTS1000NE6TA belongs to Zetex's legacy "ZXT" series of integrated bipolar/Schottky devices, designed specifically for compact, high-efficiency power switching in portable and interface-critical systems.

FAQ

What is the maximum continuous power dissipation for ZXTS1000NE6TA when both transistor and diode are active?

The maximum continuous power dissipation is 0.885 W at T_amb = 25 °C, verified under dual-die operation with R_θJA = 113 °C/W. This value assumes mounting on a 25 mm × 25 mm FR4 PCB with full 1 oz copper coverage and still air conditions. Derating is required above 25 °C ambient per the 113 °C/W slope.

Can the integrated Schottky diode be used independently of the transistor?

Yes - pins 4 (anode) and 5 (cathode) form an electrically isolated Schottky diode with no internal connection to transistor terminals. Its electrical characteristics (V_R = 40 V, I_F = 0.5 A, t_rr = 10 ns) are fully specified and validated independent of transistor bias state.

Is pin 6 (thermal pad) electrically connected to any internal node?

No - pin 6 is the exposed die attach pad and serves only as a thermal conduction path to the PCB. It is not electrically connected to the transistor emitter, collector, base, or diode anode/cathode. Soldering this pad improves R_θJA by ~25 °C/W but introduces no circuit connectivity.

What is the guaranteed minimum h_FE at I_C = −1.25 A?

The datasheet guarantees h_FE ≥ 30 at I_C = −1.25 A, V_CE = −2 V, and T_j = 25 °C. This lower bound reflects degradation at high current and ensures sufficient gain for robust base drive design even under worst-case conduction conditions.