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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF1607PBF MOSFET N-CH 75V 142A TO220AB Infineon Technologies	2,486	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	142A (Tc)	10V	7.5mOhm @ 85A, 10V	4V @ 250µA	320 nC @ 10 V	±20V	7750 pF @ 25 V	-	380W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRL8113PBF MOSFET N-CH 30V 105A TO220AB Infineon Technologies	6,649	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	105A (Tc)	4.5V, 10V	6mOhm @ 21A, 10V	2.25V @ 250µA	35 nC @ 4.5 V	±20V	2840 pF @ 15 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRFL014NPBF MOSFET N-CH 55V 1.9A SOT223 Infineon Technologies	7,785	RFQ	Datasheet	HEXFET®	TO-261-4, TO-261AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	55 V	1.9A (Ta)	10V	160mOhm @ 1.9A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	190 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
IRL1404PBF MOSFET N-CH 40V 160A TO220AB Infineon Technologies	8,980	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	160A (Tc)	4.3V, 10V	4mOhm @ 95A, 10V	3V @ 250µA	140 nC @ 5 V	±20V	6590 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRFR13N20DPBF MOSFET N-CH 200V 13A DPAK Infineon Technologies	3,545	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	200 V	13A (Tc)	10V	235mOhm @ 8A, 10V	5.5V @ 250µA	38 nC @ 10 V	±30V	830 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRLL2703PBF MOSFET N-CH 30V 3.9A SOT223 Infineon Technologies	4,785	RFQ	Datasheet	HEXFET®	TO-261-4, TO-261AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	30 V	3.9A (Ta)	4V, 10V	45mOhm @ 3.9A, 10V	2.4V @ 250µA	14 nC @ 5 V	±16V	530 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
IRF3707ZSPBF MOSFET N-CH 30V 59A D2PAK Infineon Technologies	3,291	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	30 V	59A (Tc)	4.5V, 10V	9.5mOhm @ 21A, 10V	2.25V @ 25µA	15 nC @ 4.5 V	±20V	1210 pF @ 15 V	-	57W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRL2203NSPBF MOSFET N-CH 30V 116A D2PAK Infineon Technologies	8,102	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	30 V	116A (Tc)	4.5V, 10V	7mOhm @ 60A, 10V	3V @ 250µA	60 nC @ 4.5 V	±16V	3290 pF @ 25 V	-	3.8W (Ta), 180W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRL1104SPBF MOSFET N-CH 40V 104A D2PAK Infineon Technologies	4,636	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	104A (Tc)	4.5V, 10V	8mOhm @ 62A, 10V	1V @ 250µA	68 nC @ 4.5 V	±16V	3445 pF @ 25 V	-	2.4W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFB42N20DPBF MOSFET N-CH 200V 44A TO220AB Infineon Technologies	4,874	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	44A (Tc)	10V	55mOhm @ 26A, 10V	5.5V @ 250µA	140 nC @ 10 V	±30V	3430 pF @ 25 V	-	2.4W (Ta), 330W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB

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