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Infineon Technologies IRLL2703PBF

Part No.:
IRLL2703PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRLL2703PBF.pdf
Description:
MOSFET N-CH 30V 3.9A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,785

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Product details

Overview

IRLL2703PBF from International Rectifier is a 30V N-channel enhancement-mode Power MOSFET in SOT-223 package, optimized for low-voltage DC-DC conversion and load switching. It delivers RDS(on) = 0.045Ω @ VGS = 10V, 3.9A continuous drain current at TA = 25°C, and 180mJ single-pulse avalanche energy - enabling robust operation in automotive body electronics and industrial power supplies.

For engineers reviewing the IRLL2703PBF datasheet, IRLL2703PBF pinout, IRLL2703PBF application, or IRLL2703PBF equivalent, key selection criteria include its 30V VDSS, ultra-low on-resistance at 4.0V gate drive, fast 24ns rise time, SOT-223 thermal performance (RθJA = 50°C/W on 1"² copper), and fully avalanche-rated ruggedness.

Technical Context

This HEXFET® device uses fifth-generation silicon processing to minimize conduction loss while maintaining high dv/dt immunity (5.0 V/ns) and fast switching (tr = 24 ns, tf = 14 ns). Its gate threshold voltage (1.0–2.4 V) supports direct logic-level drive from 3.3V/5V microcontrollers.

The integrated body diode exhibits VSD = 1.0 V @ IS = 2.3A and trr = 42–63 ns, supporting synchronous rectification and flyback recovery in compact SMPS designs. Thermal design leverages the SOT-223's enlarged heatsink tab for 2.1W power dissipation on optimized PCBs.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - Maximum blocking voltage for 12V/24V rail protection and buck converter high-side use
RDS(on)0.045 Ω @ VGS = 10V - Enables <150 mW conduction loss at 3.9A, reducing thermal stress in space-constrained layouts
ID (continuous)3.9 A @ TA = 25°C - Supports sustained load switching in automotive door modules and LED drivers
EAS180 mJ - Withstands unclamped inductive turn-off events in relay/snubberless solenoid control
Qg9.3 nC typ - Low gate charge enables efficient 1MHz+ switching with minimal driver power overhead
tr/tf24 ns / 14 ns - Reduces switching losses in high-frequency DC-DC converters and PWM motor gates
RθJA50 °C/W - Achieved on 1"² copper board, allowing 2.1W power dissipation without external heatsink

Pinout & Package

SOT-223 package with exposed drain tab for enhanced thermal conduction; surface-mount compatible with vapor-phase, infrared, or wave soldering. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Drain (tab) - dual-drain configuration improves current handling and thermal spreading.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateControl terminal accepting 0–16V logic-level signals; 2.4V max VGS(th) ensures reliable turn-on from 3.3V MCU GPIO
Pin 2 (D)Drain (Tab)Main high-side current path; electrically connected to exposed metal tab for low-inductance, high-current routing and heatsinking
Pin 3 (S)SourceReference node for gate drive and current sensing; tied to ground or low-side return in most switch configurations
Pin 4 (D)Drain (Tab)Second drain connection reinforcing thermal and electrical integrity of the tab; must be soldered to large copper pour

Key Features

FeatureDesign Value
Ultra-low RDS(on)0.045Ω @ 10V enables >95% efficiency in 5V-input buck regulators delivering 3A output
Fully avalanche rated180mJ EAS allows safe operation under inductive load transients without external clamping diodes
Logic-level gate driveVGS(th) ≤ 2.4V permits direct interface with 3.3V/5V microcontrollers - no level shifter required
Enhanced thermal performanceSOT-223 tab delivers 2.1W dissipation on 1"² copper - 2× higher than standard SOT-23 equivalents
Fast switching24ns rise time supports >1MHz PWM frequency in compact battery-powered DC-DC modules

Applications

Automotive Body Control ModuleIndustrial PLC Output Stage

Use Scenario: Driving 12V solenoids, window motors, and mirror actuators in vehicle door modules.

IC Role / Device Role / Timing Role: High-side load switch with integrated avalanche energy absorption during inductive kickback.

Use Value: Eliminates need for external flyback diode; 180mJ EAS handles 3.9A inductive turn-off without voltage overshoot.

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital outputs.

IC Role / Device Role / Timing Role: Low-loss, fast-turning power switch controlling 24V DC loads up to 3A.

Use Value: 0.045Ω RDS(on) reduces heat generation vs. mechanical contacts; 24ns tr supports rapid state changes in motion control sequences.

USB-C Power Delivery Load SwitchLED Driver for Automotive Lighting

Use Scenario: Inrush current limiting and hot-swap protection in USB-C PD sink applications.

IC Role / Device Role / Timing Role: Controlled high-side switch enabling soft-start and fault isolation between source and load.

Use Value: Logic-level gate allows direct control by PD controller; 30V VDSS accommodates 20V PD profiles with margin.

Use Scenario: Constant-current dimming control for LED headlamps and DRLs using PWM modulation.

IC Role / Device Role / Timing Role: Low-RDS(on) PWM switch in high-side configuration driving series-connected LEDs.

Use Value: 14ns fall time minimizes dead-time losses; 1.0V VSD body diode supports freewheeling in buck-derived drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3025LSD-13RDS(on) = 0.025Ω @ 4.5V but rated only 30V/4.5A; smaller TSOP-6 package limits thermal capacityBetter for ultra-compact 3.3V-driven loads; unsuitable for sustained 3.9A due to higher RθJA (100°C/W)Choose when gate drive is limited to 4.5V and board space is critical; avoid for continuous >2.5A loads
SI2303DS-T1-GE3RDS(on) = 0.095Ω @ 4.5V; lower VDSS = 30V but only 2.6A ID; SOT-23 packageLower cost for light-duty switching; insufficient avalanche rating (no EAS spec) and thermal headroomSelect for non-critical 12V logic-level loads below 2A; not recommended for inductive or automotive environments

Compared with DMN3025LSD-13 and SI2303DS-T1-GE3, IRLL2703PBF provides superior thermal robustness (50°C/W), verified 180mJ avalanche capability, and proven reliability in automotive temperature cycling - making it the preferred choice for mission-critical 3.9A switching where long-term stability matters.

Availability

IRLL2703PBF is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, USB-C power delivery load switching, and LED driver circuits requiring stable component supply across extended production lifecycles.

Supply support for IRLL2703PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) pioneered advanced power MOSFET architectures and was a leader in HEXFET® technology for over four decades.

The IRLL2703PBF belongs to the fifth-generation HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, surface-mount power switching in automotive, industrial, and consumer DC-DC applications where logic-level drive and thermal resilience are essential.

FAQ

Is IRLL2703PBF suitable for 3.3V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–2.4V and guaranteed RDS(on) ≤ 0.060Ω at VGS = 4.0V, IRLL2703PBF turns on fully using standard 3.3V GPIO outputs. Its low Qg (9.3nC typ) also minimizes driver loading and switching delay in low-voltage systems.

What is the maximum continuous current at 70°C ambient?

At TA = 70°C, the continuous drain current is derated to 3.1A (VGS = 10V), based on thermal limits and the 8.3 mW/°C linear derating factor. This assumes mounting on FR-4 with minimum footprint; performance improves to ~4.2A on 1"² copper board at same ambient.

Does IRLL2703PBF require an external flyback diode when switching inductive loads?

No. The device is fully avalanche rated with 180mJ single-pulse energy capability and 3.9A avalanche current rating. It safely absorbs inductive energy during turn-off without external clamping, provided pulse width and duty cycle remain within datasheet limits (≤300µs, ≤2%).

How does the SOT-223 package improve thermal performance over SOT-23?

The SOT-223 features an enlarged copper tab that serves as both drain connection and heatsink, achieving RθJA = 50°C/W on 1"² copper - nearly half that of typical SOT-23 devices (~100°C/W). This allows 2.1W power dissipation versus ~0.5W for SOT-23, enabling higher current density in compact layouts.

IRLL2703PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
45mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
530 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRLL2703PBF FAQ

1.How can I place an order for IRLL2703PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL2703PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL2703PBF reliable?

The price and inventory of IRLL2703PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL2703PBF is usually 5 days.

3.What payment methods are accepted for IRLL2703PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL2703PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL2703PBF?

IRLL2703PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL2703PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL2703PBF?

For technical support, including IRLL2703PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL2703PBF requirements.

6.How does Aetrix verify that IRLL2703PBF is sourced from the original manufacturer or authorized distributors?

All IRLL2703PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL2703PBF meets industry standards.

7.What is the process for return or replacement of IRLL2703PBF?

All IRLL2703PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLL2703PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL2703PBF part is unused and in its original packaging.

Return procedure for IRLL2703PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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