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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL1104SPBF

Name: IRL1104SPBF
Brand: Infineon Technologies
SKU: IRL1104SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL1104SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL1104SPBF.pdf

Description:: MOSFET N-CH 40V 104A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,636

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Product details

Overview

IRL1104SPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel Power MOSFET in D2PAK surface-mount package, rated for 40 V V_DSS, 0.008 Ω R_DS(on) at V_GS = 10 V, and 104 A continuous drain current at T_C = 25°C. It features fully avalanche-rated ruggedness, fast switching (t_r = 257 ns), and 175°C maximum junction temperature - deployed in high-current DC-DC converters, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRL1104SPBF datasheet, IRL1104SPBF pinout, IRL1104SPBF application, or IRL1104SPBF equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, 68 nC total gate charge, 340 mJ single-pulse avalanche energy, and thermal resistance of 0.9°C/W (junction-to-case), critical for thermally constrained high-efficiency power stages.

Technical Context

This HEXFET® device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) and unclamped inductive switching capability. Its logic-level gate threshold (V_GS(th) = 1.0–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

The D2PAK package provides low internal connection resistance and supports up to 167 W power dissipation at T_C = 25°C. Its body diode exhibits 84–126 ns reverse recovery time and 223–335 nC Q_rr, making it suitable for synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; defines use in ≤36 V nominal bus systems.
R_DS(on) @ V_GS = 10 V	0.008 Ω - Enables <1 W conduction loss at 100 A, critical for high-current switch-mode power stages.
R_DS(on) @ V_GS = 4.5 V	0.012 Ω - Confirmed low on-resistance with logic-level drive, supporting 3.3 V/5 V controller interfacing.
Q_g	68 nC - Total gate charge determines driver strength requirement and switching loss trade-off.
E_AS	340 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients.
T_J max	+175°C - High junction temperature rating allows operation in sealed enclosures or high ambient environments.
R_θJC	0.9°C/W - Low junction-to-case thermal resistance enables efficient heatsinking via PCB copper or external heatsink.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Drain (tab + pins 2–3), Source (pin 1), Gate (pin 4).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (MOSFET source, body diode cathode)	Primary current return path; tied to ground or low-side reference; connects to PCB ground plane for thermal conduction.
Pins 2 & 3 (Drain)	Drain terminal (MOSFET drain, body diode anode)	High-current power input/output node; electrically and thermally connected to large copper pour or heatsink via exposed tab.
Pin 4 (Gate)	Control terminal for channel modulation	High-impedance input requiring low-inductance gate drive trace; sensitive to ringing due to 34 nC Q_gd (Miller charge).

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in microcontroller-based systems.
Fully avalanche-rated construction	Rated for 340 mJ single-pulse and 17 mJ repetitive avalanche energy - withstands unclamped inductive switching without failure.
Low R_DS(on) × Q_g figure-of-merit	0.008 Ω × 68 nC = 0.544 Ω·nC - balances conduction and switching losses for high-frequency power conversion.
Enhanced thermal performance	R_θJC = 0.9°C/W and 167 W P_D @ T_C = 25°C - supports high-power density designs with minimal heatsink footprint.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-current BLDC motor phase leg in industrial automation drives, operating at 24–48 V bus with 50–100 A peak load.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; conducts during PWM low period and blocks reverse EMF during freewheeling.

Use Value: 0.008 Ω R_DS(on) minimizes I²R losses at 100 A, reducing thermal stress and enabling compact heatsink design.

Use Scenario: Output synchronous rectifier in 40 V input, 12 V/60 A telecom power supply with 200 kHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; turned on during low-side conduction interval to reduce forward drop.

Use Value: V_SD = 1.3 V body diode forward voltage is bypassed entirely when fully enhanced, cutting conduction loss by >70% vs. discrete diode.

Industrial Power Supply OR-ing

Hot-Swap Controller Back-End Switch

Use Scenario: Redundant 28 V DC power feed in avionics rack, where two supplies are paralleled using ideal diode control.

IC Role / Device Role / Timing Role: Ideal diode switch placed between supply output and common bus; blocks reverse current while conducting forward with minimal loss.

Use Value: 1.0 V gate threshold and 0.012 Ω R_DS(on) at 4.5 V enable fast turn-on with standard op-amp based ideal diode controllers.

Use Scenario: Inrush-limited hot-swap module for 48 V intermediate bus in datacom equipment, handling up to 80 A steady-state load.

IC Role / Device Role / Timing Role: Main pass FET controlling power delivery during insertion; subjected to repeated 62 A avalanche events during fault clearing.

Use Value: Fully rated 340 mJ E_AS and 62 A I_AR allow reliable operation under repeated line transient and short-circuit conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404PBF	Higher R_DS(on) (0.012 Ω @ 10 V), lower ID (130 A), same D2PAK package	Slightly higher conduction loss at high current; identical thermal footprint and gate drive compatibility	Select when marginally higher on-resistance is acceptable and cost optimization is prioritized over peak efficiency.
STP110N4F6	Same V_DSS (40 V), higher R_DS(on) (0.0055 Ω @ 10 V), TO-220 package, non-logic-level (V_GS(th) = 2–4 V)	Requires 10 V gate drive; unsuitable for 3.3 V logic; superior R_DS(on) but inferior thermal resistance (R_θJC ≈ 1.5°C/W)	Choose only if board layout permits through-hole mounting and gate drive circuit supports ≥10 V swing.

Compared with IRL1104SPBF, IRL1404PBF trades marginal R_DS(on) increase for broader availability and lower unit cost, while STP110N4F6 offers lower on-resistance but demands higher gate voltage and delivers less thermal performance in surface-mount layouts.

Availability

IRL1104SPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and redundant power OR-ing circuits requiring stable component supply and long-term manufacturability.

Supply support for IRL1104SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® innovation.

The IRL1104SPBF belongs to the logic-level HEXFET® Power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained and thermally demanding applications such as server power supplies and factory automation systems.

FAQ

Is IRL1104SPBF RoHS-compliant and lead-free?

Yes, IRL1104SPBF is lead-free and RoHS-compliant, as indicated by the "PbF" suffix and confirmed in Infineon's official documentation. The device uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements for surface-mount assembly.

What is the recommended PCB footprint and thermal pad layout for IRL1104SPBF?

Infineon recommends a minimum 1.5" × 1.5" (38 mm × 38 mm) copper pour on the primary side, connected directly to the exposed drain tab via ≥6 thermal vias (0.3 mm diameter, filled or plated). Footprint must follow AN-994 guidelines, including solder mask defined pads and 0.5 mm solder paste stencil aperture for optimal thermal transfer and mechanical reliability.

Can IRL1104SPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized to 1.0 at 25°C, rising to ~1.5 at 125°C) enables stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical layout, and individual gate resistors (≥10 Ω) to suppress oscillation; derate total current by 15% for thermal margin.

Does IRL1104SPBF require a gate resistor, and what value is typical?

Yes - a gate resistor is required to dampen ringing caused by parasitic inductance and Miller effect. For 4.5 V logic-level drive at ≤200 kHz, a 10–22 Ω series resistor is typical; values up to 47 Ω may be used to reduce EMI at the expense of increased t_on/t_off. Layout must minimize gate loop inductance (<3 nH) for stable switching.

IRL1104SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 104A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 62A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3445 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL1104SPBF FAQ

1.How can I place an order for IRL1104SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL1104SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL1104SPBF reliable?

The price and inventory of IRL1104SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1104SPBF is usually 5 days.

3.What payment methods are accepted for IRL1104SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1104SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL1104SPBF?

IRL1104SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL1104SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL1104SPBF?

For technical support, including IRL1104SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1104SPBF requirements.

6.How does Aetrix verify that IRL1104SPBF is sourced from the original manufacturer or authorized distributors?

All IRL1104SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1104SPBF meets industry standards.

7.What is the process for return or replacement of IRL1104SPBF?

All IRL1104SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL1104SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL1104SPBF part is unused and in its original packaging.

Return procedure for IRL1104SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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