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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3707ZSPBF

Name: IRF3707ZSPBF
Brand: Infineon Technologies
SKU: IRF3707ZSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3707ZSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3707ZSPBF.pdf

Description:: MOSFET N-CH 30V 59A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3707ZSPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, rated for 30 V V_DS, 59 A continuous drain current at T_C = 25°C, 9.5 mΩ R_DS(on) at V_GS = 10 V, and optimized for high-frequency synchronous buck converters in CPU power delivery.

For engineers reviewing the IRF3707ZSPBF datasheet, IRF3707ZSPBF pinout, IRF3707ZSPBF application, or IRF3707ZSPBF equivalent, key selection criteria include low gate charge (9.7 nC), ultra-low R_DS(on) at 4.5 V drive, fully characterized avalanche capability, and thermal resistance of 2.65 °C/W junction-to-case - critical for compact, high-efficiency DC/DC power stages.

Technical Context

This MOSFET employs a planar silicon process with optimized cell geometry to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) performance up to 150 mJ at T_J = 25°C. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (−5.3 mV/°C) support stable turn-on behavior across temperature.

The device features a co-packaged body diode with 14–21 ns reverse recovery time and 5.2–7.8 nC Q_rr, enabling efficient synchronous rectification. Input capacitance (C_iss = 1210 pF) and gate-to-drain charge (Q_gd = 3.4 nC) are specified at V_DS = 15 V, supporting fast switching with minimal C_dv/dt induced turn-on risk when Q_gd/Q_gs1 ratio is controlled.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters
R_DS(on) max	9.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 32 A RMS in 12 V→1.2 V buck stage
Q_g	9.7 nC - Low total gate charge reduces driver power and enables >1 MHz operation with standard gate drivers
I_D cont @ 25°C	59 A - Supports high-current CPU core rail designs without parallel devices
R_θJC	2.65 °C/W - Allows direct heatsink mounting for thermal management in space-constrained server VRMs
E_AS	150 mJ - Rated single-pulse avalanche energy ensures reliability under load dump or inductive fault conditions
Q_rr	5.2–7.8 nC - Low reverse recovery charge minimizes cross-conduction losses in synchronous FET position

Pinout & Package

IRF3707ZSPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard lead spacing, and screw-mount compatibility (6-32/M3). The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink
Source	Reference node for gate drive and current return	Low-inductance connection essential for minimizing shoot-through during synchronous switching
Gate	Control electrode for channel modulation	High-impedance input requiring <10 Ω series resistance to damp ringing and suppress C_dv/dt turn-on

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Enables direct drive from 5 V PWM controllers without level-shifting, reducing BOM count in entry-level VRMs
Fully characterized avalanche rating	Guarantees survivability under unclamped inductive switching events common in high-di/dt CPU power stages
Lead-free D2Pak-compatible footprint	TO-220AB mechanical form allows drop-in replacement for IRF3707ZPbF (TO-262) and IRF3707ZLPbF (TO-263) in legacy layouts
Low Q_gd/Q_gs1 ratio	Reduces susceptibility to false turn-on during high dV/dt transitions at the switch node in synchronous buck topologies
Body diode with fast t_rr	14–21 ns recovery time supports efficient dead-time management and limits reverse recovery losses in light-load operation

Applications

Server CPU Voltage Regulator

Industrial PLC Power Supply

Use Scenario: High-current, multi-phase buck converter delivering 1.0–1.8 V at up to 200 A to modern x86 processors.

IC Role / Device Role / Timing Role: Synchronous FET in low-side position, switching at 300–600 kHz with precise dead-time control.

Use Value: 9.5 mΩ R_DS(on) and 5.2 nC Q_rr reduce conduction and recovery losses, improving full-load efficiency by ≥0.8% versus older 12 mΩ alternatives.

Use Scenario: 24 V input to 5 V/3.3 V isolated auxiliary supply with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Primary-side switching FET in flyback or forward converter, operating at 100–200 kHz.

Use Value: 150 mJ E_AS rating ensures reliable operation during output short-circuit events without external snubbers.

Telecom Base Station PSU

Automotive ADAS Domain Controller

Use Scenario: Intermediate bus converter stepping 48 V down to 12 V for RF power amplifiers and digital subsystems.

IC Role / Device Role / Timing Role: High-side control FET in active clamp forward topology, gated by isolated driver.

Use Value: 2.65 °C/W R_θJC enables forced-air cooling at 40 A continuous, meeting telecom thermal derating requirements.

Use Scenario: 12 V input to 1.1 V core rail for radar SoC, operating in −40°C to +125°C ambient.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck, driven by integrated controller.

Use Value: R_DS(on) drift <1.5× from 25°C to 125°C (per Fig 4) ensures predictable thermal performance across automotive temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3705ZPBF	R_DS(on) = 12.5 mΩ @ 4.5 V; lower V_DS rating (20 V); TO-220AB package	Suitable only for ≤16 V input rails; higher conduction loss at same current	Select when 4.5 V gate drive is mandatory and 20 V blocking suffices
STP30NF20	V_DS = 200 V; R_DS(on) = 38 mΩ @ 10 V; TO-220 package; no Q_rr spec	Designed for high-voltage industrial motor drives, not low-V_DS high-current buck stages	Use only if higher voltage rating is required and efficiency trade-off is acceptable

Compared with IRL3705ZPBF and STP30NF20, IRF3707ZSPBF uniquely balances 30 V rating, sub-10 mΩ on-resistance at 10 V, and documented Q_rr/E_AS specs - making it optimal for high-efficiency, high-current, medium-voltage synchronous buck converters where thermal and switching loss budgets are tightly constrained.

Availability

IRF3707ZSPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, industrial PLC power supplies, and telecom intermediate bus converters requiring stable component supply and long-term manufacturability.

Supply support for IRF3707ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power systems.

FAQ

Is IRF3707ZSPBF suitable for 4.5 V gate drive in synchronous buck applications?

Yes. The device is characterized for R_DS(on) ≤12.5 mΩ at V_GS = 4.5 V and exhibits low gate threshold voltage (1.35–2.25 V), enabling reliable enhancement-mode turn-on with 5 V logic-level drivers without external level shifters - confirmed in Fig 1 and Table 2 of the official datasheet.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies I_D @ T_C = 100°C as 42 A at V_GS = 10 V. This value reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and is validated per Absolute Maximum Ratings table on page 1.

Does IRF3707ZSPBF have a built-in body diode, and is its reverse recovery performance specified?

Yes. It integrates a monolithic N-channel MOSFET with an inherent parasitic body diode. Reverse recovery time (t_rr) is specified as 14–21 ns and Q_rr as 5.2–7.8 nC at I_F = 17 A, V_DD = 15 V, and di/dt = 100 A/µs - critical parameters for synchronous rectification efficiency, per Diode Characteristics table on page 2.

Can IRF3707ZSPBF be used in avalanche mode, and what is its rated energy?

Yes. It is fully characterized for unclamped inductive switching (UIS) with a single-pulse avalanche energy rating of 150 mJ at T_J = 25°C, tested per Fig 12 and Fig 16. This rating applies to clamped inductive loads with V_DD = 15 V and I_AS = 23 A, ensuring robustness in overload or startup fault conditions.

IRF3707ZSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3707ZSPBF FAQ

1.How can I place an order for IRF3707ZSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3707ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3707ZSPBF reliable?

The price and inventory of IRF3707ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3707ZSPBF is usually 5 days.

3.What payment methods are accepted for IRF3707ZSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3707ZSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3707ZSPBF?

IRF3707ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3707ZSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3707ZSPBF?

For technical support, including IRF3707ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3707ZSPBF requirements.

6.How does Aetrix verify that IRF3707ZSPBF is sourced from the original manufacturer or authorized distributors?

All IRF3707ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3707ZSPBF meets industry standards.

7.What is the process for return or replacement of IRF3707ZSPBF?

All IRF3707ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3707ZSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3707ZSPBF part is unused and in its original packaging.

Return procedure for IRF3707ZSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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